74HC3G34; 74HCT3G34
Triple buffer gate
Rev. 05 — 7 May 2009
Product data sheet
1. General description
The 74HC3G34; 74HCT3G34 are high-speed Si-gate CMOS devices. They provide three
buffer gates.
The HC device has CMOS input switching levels and supply voltage range 2 V to 6 V.
The HCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V.
2. Features
I
I
I
I
I
I
I
Wide supply voltage range from 2.0 V to 6.0 V
Symmetrical output impedance
High noise immunity
Low-power dissipation
Balanced propagation delays
Multiple package options
ESD protection:
N
HBM JESD22-A114E exceeds 2000 V
N
MM JESD22-A115-A exceeds 200 V
I
Specified from
−40 °C
to +85
°C
and
−40 °C
to +125
°C
3. Ordering information
Table 1.
Ordering information
Package
Temperature range Name
74HC3G34DP
74HCT3G34DP
74HC3G34DC
74HCT3G34DC
74HC3G34GD
74HCT3G34GD
−40 °C
to +125
°C
XSON8U
−40 °C
to +125
°C
VSSOP8
−40 °C
to +125
°C
TSSOP8
Description
plastic thin shrink small outline package; 8 leads;
body width 3 mm; lead length 0.5 mm
Version
SOT505-2
Type number
plastic very thin shrink small outline package; 8 leads; SOT765-1
body width 2.3 mm
plastic extremely thin small outline package; no leads; SOT996-2
8 terminals; UTLP based; body 3
×
2
×
0.5 mm
NXP Semiconductors
74HC3G34; 74HCT3G34
Triple buffer gate
4. Marking
Table 2.
Marking
Marking code
H34
T34
P34
U34
P34
U34
Type number
74HC3G34DP
74HCT3G34DP
74HC3G34DC
74HCT3G34DC
74HC3G34GD
74HCT3G34GD
5. Functional diagram
1
1
7
1
1A
1Y
7
3
1
5
2
3Y
3A
6
3
2A
2Y
5
6
1
2
mna744
mna745
Fig 1.
Logic symbol
Fig 2.
IEC logic symbol
6. Pinning information
6.1 Pinning
74HC3G34
74HCT3G34
74HC3G34
74HCT3G34
1A
3Y
2A
GND
1
2
3
4
001aae470
1A
3Y
8
7
6
5
V
CC
1Y
3A
2Y
GND
2A
1
2
3
4
8
7
6
5
V
CC
1Y
3A
2Y
001aak021
Transparent top view
Fig 3.
Pin configuration SOT505-2 (TSSOP8) and
SOT765-1 (VSSOP8)
Fig 4.
Pin configuration SOT996-2 (XSON8U)
74HC_HCT3G34_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 7 May 2009
2 of 13
NXP Semiconductors
74HC3G34; 74HCT3G34
Triple buffer gate
6.2 Pin description
Table 3.
Symbol
1A, 2A, 3A
1Y, 2Y, 3Y
GND
V
CC
Pin description
Pin
1, 3, 6
7, 5, 2
4
8
Description
data input
data output
ground (0 V)
supply voltage
7. Functional description
Table 4.
Input
nA
L
H
[1]
H = HIGH voltage level; L = LOW voltage level.
Function table
[1]
Output
nY
L
H
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
I
IK
I
OK
I
O
I
CC
I
GND
T
stg
P
tot
[1]
[2]
Parameter
supply voltage
input clamping current
output clamping current
output current
quiescent supply current
ground current
storage temperature
total power dissipation
Conditions
V
I
<
−0.5
V or V
I
> V
CC
+ 0.5 V
V
O
<
−0.5
V or V
O
> V
CC
+ 0.5 V
V
O
=
−0.5
V to (V
CC
+ 0.5 V)
[1]
[1]
Min
−0.5
-
-
-
-
−50
−65
Max
+7.0
±20
±20
±25
50
-
+150
300
Unit
V
mA
mA
mA
mA
mA
°C
mW
T
amb
=
−40 °C
to +125
°C
[2]
-
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
For TSSOP8 package: above 55
°C
the value of P
tot
derates linearly with 2.5 mW/K.
For VSSOP8 package: above 110
°C
the value of P
tot
derates linearly with 8 mW/K.
For XSON8U package: above 118
°C
the value of P
tot
derates linearly with 7.8 mW/K.
74HC_HCT3G34_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 7 May 2009
3 of 13
NXP Semiconductors
74HC3G34; 74HCT3G34
Triple buffer gate
9. Recommended operating conditions
Table 6.
Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
V
CC
V
I
V
O
T
amb
∆t/∆V
supply voltage
input voltage
output voltage
ambient temperature
input transition rise
and fall rate
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
Conditions
Min
2.0
0
0
−40
-
-
-
74HC3G34
Typ
5.0
-
-
+25
-
1.67
-
Max
6.0
V
CC
V
CC
+125
625
139
83
Min
4.5
0
0
−40
-
-
-
74HCT3G34
Typ
5.0
-
-
+25
-
1.67
-
Max
5.5
V
CC
V
CC
+125
-
139
-
V
V
V
°C
ns/V
ns/V
ns/V
Unit
10. Static characteristics
Table 7.
Static characteristics
Voltages are referenced to GND (ground = 0 V).
Symbol
74HC3G34
V
IH
HIGH-level input
voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
IL
LOW-level input
voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
OH
HIGH-level output
voltage
V
I
= V
IH
or V
IL
I
O
=
−20 µA;
V
CC
= 2.0 V
I
O
=
−20 µA;
V
CC
= 4.5 V
I
O
=
−20 µA;
V
CC
= 6.0 V
I
O
=
−4.0
mA; V
CC
= 4.5 V
I
O
=
−5.2
mA; V
CC
= 6.0 V
V
OL
LOW-level output
voltage
V
I
= V
IH
or V
IL
I
O
= 20
µA;
V
CC
= 2.0 V
I
O
= 20
µA;
V
CC
= 4.5 V
I
O
= 20
µA;
V
CC
= 6.0 V
I
O
= 4.0 mA; V
CC
= 4.5 V
I
O
= 5.2 mA; V
CC
= 6.0 V
I
I
I
CC
C
I
input leakage current
supply current
input capacitance
V
I
= V
CC
or GND; V
CC
= 6.0 V
per input pin; V
I
= V
CC
or GND;
I
O
= 0 A; V
CC
= 6.0 V
-
-
-
-
-
-
-
-
0
0
0
0.15
0.16
-
-
1.5
0.1
0.1
0.1
0.33
0.33
±1.0
10
-
-
-
-
-
-
-
-
-
0.1
0.1
0.1
0.4
0.4
±1.0
20
-
V
V
V
V
V
µA
µA
pF
1.9
4.4
5.9
4.13
5.63
2.0
4.5
6.0
4.32
5.81
-
-
-
-
-
1.9
4.4
5.9
3.7
5.2
-
-
-
-
-
V
V
V
V
V
1.5
3.15
4.2
-
-
-
1.2
2.4
3.2
0.8
2.1
2.8
-
-
-
0.5
1.35
1.8
1.5
3.15
4.2
-
-
-
-
-
-
0.5
1.35
1.8
V
V
V
V
V
V
Parameter
Conditions
−40 °C
to +85
°C
Min
Typ
[1]
Max
−40 °C
to +125
°C
Min
Max
Unit
74HC_HCT3G34_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 7 May 2009
4 of 13
NXP Semiconductors
74HC3G34; 74HCT3G34
Triple buffer gate
Table 7.
Static characteristics
…continued
Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Conditions
−40 °C
to +85
°C
Min
74HCT3G34
V
IH
V
IL
V
OH
HIGH-level input
voltage
LOW-level input
voltage
HIGH-level output
voltage
V
CC
= 4.5 V to 5.5 V
V
CC
= 4.5 V to 5.5 V
V
I
= V
IH
or V
IL
I
O
=
−20 µA;
V
CC
= 4.5 V
I
O
=
−4.0
mA; V
CC
= 4.5 V
V
OL
LOW-level output
voltage
V
I
= V
IH
or V
IL
I
O
= 20
µA;
V
CC
= 4.5 V
I
O
= 4.0 mA; V
CC
= 4.5 V
I
I
I
CC
∆I
CC
C
I
[1]
−40 °C
to +125
°C
Min
2.0
-
Max
-
0.8
Unit
Typ
[1]
1.6
1.2
Max
-
0.8
2.0
-
V
V
4.4
4.13
-
-
-
-
-
-
4.5
4.32
0
0.15
-
-
-
1.5
-
-
0.1
0.33
±1.0
10
375
-
4.4
3.7
-
-
-
-
-
-
-
-
0.1
0.4
±1.0
20
410
-
V
V
V
V
µA
µA
µA
pF
input leakage current
supply current
additional supply
current
input capacitance
V
I
= V
CC
or GND; V
CC
= 5.5 V
V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 5.5 V
per input; V
CC
= 4.5 V to 5.5 V;
V
I
= V
CC
−
2.1 V; I
O
= 0 A
All typical values are measured at T
amb
= 25
°C.
11. Dynamic characteristics
Table 8.
Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see
Figure 6.
Symbol Parameter
74HC3G34
t
pd
propagation delay nA to nY; see
Figure 5
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
t
t
transition time
nY; see
Figure 5
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
C
PD
power dissipation V
I
= GND to V
CC
capacitance
[4]
[3]
[2]
Conditions
−40 °C
to +85
°C
Min
Typ
[1]
Max
−40 °C
to +125
°C
Unit
Min
Max
-
-
-
-
-
-
-
29
9
8
18
6
5
10
95
19
16
95
19
16
-
-
-
-
-
-
-
-
125
25
20
125
25
20
-
ns
ns
ns
ns
ns
ns
pF
74HC_HCT3G34_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 7 May 2009
5 of 13
ADI 工业技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
