74HC2G66; 74HCT2G66
Dual single-pole single-throw analog switch
Rev. 06 — 2 April 2010
Product data sheet
1. General description
74HC2G66 and 74HCT2G66 are high-speed Si-gate CMOS devices. They are dual
single-pole single-throw analog switches. Each switch has two input/output pins
(nY and nZ) and an active HIGH enable input pin (nE). When pin nE is LOW, the analog
switch is turned off.
2. Features and benefits
Wide supply voltage range from 2.0 V to 10.0 V for 74HC2G66
Very low ON resistance:
41
Ω
(typ.) at V
CC
= 4.5 V
30
Ω
(typ.) at V
CC
= 6.0 V
21
Ω
(typ.) at V
CC
= 9.0 V
High noise immunity
Low power dissipation
25 mA continuous switch current
Multiple package options
ESD protection:
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V
Specified from
−40 °C
to +85
°C
and
−40 °C
to +125
°C
3. Ordering information
Table 1.
Ordering information
Package
Temperature range
74HC2G66DP
74HCT2G66DP
74HC2G66DC
74HCT2G66DC
74HC2G66GD
74HCT2G66GD
−40 °C
to +125
°C
XSON8U
−40 °C
to +125
°C
VSSOP8
−40 °C
to +125
°C
Name
TSSOP8
Description
plastic thin shrink small outline package; 8
leads; body width 3 mm; lead length 0.5 mm
Version
SOT505-2
Type number
plastic very thin shrink small outline package; 8 SOT765-1
leads; body width 2.3 mm
plastic extremely thin small outline package; no SOT996-2
leads; 8 terminals; UTLP based; body 3
×
2
×
0.5 mm
NXP Semiconductors
74HC2G66; 74HCT2G66
Dual single-pole single-throw analog switch
4. Marking
Table 2.
Marking codes
Marking
H66
T66
H66
T66
H66
T66
Type number
74HC2G66DP
74HCT2G66DP
74HC2G66DC
74HCT2G66DC
74HC2G66GD
74HCT2G66GD
5. Functional diagram
1Y
1Z
1E
2Z
2Y
Y
Z
2E
E
001aag497
001aah372
Fig 1.
Logic symbol
Fig 2.
Logic diagram for 1 switch
6. Pinning information
6.1 Pinning
74HC2G66
74HCT2G66
1Y
1
2
3
4
8
7
6
5
V
CC
1E
2Z
2Y
74HC2G66
74HCT2G66
1Y
1Z
2E
GND
1
2
3
4
001aai699
1Z
8
7
6
5
V
CC
1E
2Z
2Y
2E
GND
001aal625
Transparent top view
Fig 3.
Pin configuration SOT505-2 (TSSOP8) and
SOT765-1 (VSSOP8)
Fig 4.
Pin configuration SOT996-2 (XSON8U)
74HC_HCT2G66_6
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 06 — 2 April 2010
2 of 21
NXP Semiconductors
74HC2G66; 74HCT2G66
Dual single-pole single-throw analog switch
6.2 Pin description
Table 3.
Symbol
1Y, 2Y
1Z, 2Z
GND
1E, 2E
V
CC
Pin description
Pin
1, 5
2, 6
4
7, 3
8
Description
independent input or output
independent input or output
ground (0 V)
enable input (active HIGH)
supply voltage
7. Functional description
Table 4.
Input nE
L
H
[1]
H = HIGH voltage level; L = LOW voltage level.
Function table
[1]
Switch
OFF
ON
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
I
IK
I
SK
I
SW
I
CC
I
GND
T
stg
P
tot
Parameter
supply voltage
input clamping current
switch clamping current
switch current
supply current
ground current
storage temperature
total power dissipation
T
amb
=
−40 °C
to +125
°C
per package
per switch
[1]
[2]
[2]
[2]
Conditions
V
I
<
−0.5
V or V
I
> V
CC
+ 0.5 V
V
I
<
−0.5
V or V
I
> V
CC
+ 0.5 V
V
SW
>
−0.5
V or V
SW
< V
CC
+ 0.5 V
[1]
[1]
Min
−0.5
-
-
-
-
−30
−65
-
-
Max
+11.0
±20
±20
±20
30
-
+150
300
100
Unit
V
mA
mA
mA
mA
mA
°C
mW
mW
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
For TSSOP8 packages above 55
°C
the value of P
tot
derates linearly with 2.5 mW/K.
For VSSOP8 packages above 110
°C
the value of P
tot
derates linearly with 8.0 mW/K.
For XSON8U package: above 118
°C
the value of P
tot
derates linearly with 7.8 mW/K.
74HC_HCT2G66_6
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 06 — 2 April 2010
3 of 21
NXP Semiconductors
74HC2G66; 74HCT2G66
Dual single-pole single-throw analog switch
9. Recommended operating conditions
Table 6.
Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
[1]
Symbol Parameter
V
CC
V
I
V
O
V
SW
T
amb
Δt/ΔV
supply voltage
input voltage
output voltage
switch voltage
ambient temperature
input transition rise
and fall rate
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
CC
= 10.0 V
[1]
Conditions
Min
2.0
0
0
0
−40
-
-
-
-
74HC2G66
Typ
5.0
-
-
-
+25
-
1.67
-
-
Max
10.0
V
CC
V
CC
V
CC
+125
625
139
83
35
Min
4.5
0
0
0
−40
-
-
-
-
74HCT2G66
Typ
5.0
-
-
-
+25
-
1.67
-
-
Max
5.5
V
CC
V
CC
V
CC
+125
-
139
-
-
Unit
V
V
V
V
°C
ns/V
ns/V
ns/V
ns/V
To avoid drawing V
CC
current out of pin nZ, when switch current flows in pin nY, the voltage drop across the bidirectional switch must not
exceed 0.4 V. If the switch current flows into pin nZ, no V
CC
current will flow out of terminal nY. In this case there is no limit for the
voltage drop across the switch, but the voltage at pins nY and nZ may not exceed V
CC
or GND.
10. Static characteristics
Table 7.
Static characteristics
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
74HC2G66
V
IH
HIGH-level
input voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
CC
= 9.0 V
V
IL
LOW-level
input voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
CC
= 9.0 V
I
I
input leakage current
nE; V
I
= V
CC
or GND
V
CC
= 6.0 V
V
CC
= 9.0 V
I
S(OFF)
I
S(ON)
I
CC
OFF-state
leakage current
ON-state
leakage current
supply current
nY or nZ; V
CC
= 9.0 V; see
Figure 5
nY or nZ; V
CC
= 9.0 V; see
Figure 6
nE, nY and nZ = V
CC
or GND
V
CC
= 6.0 V
V
CC
= 9.0 V
74HC_HCT2G66_6
Conditions
−40 °C
to +85
°C
Min
1.5
3.15
4.2
6.3
-
-
-
-
-
-
-
-
Typ
[1]
1.2
2.4
3.2
4.7
0.8
2.1
2.8
4.3
-
-
0.1
0.1
Max
-
-
-
-
0.5
1.35
1.8
2.7
±0.1
±0.2
1.0
1.0
−40 °C
to +125
°C
Unit
Min
1.5
3.15
4.2
6.3
-
-
-
-
-
-
-
-
Max
-
-
-
-
0.5
1.35
1.8
2.7
±0.1
±0.2
1.0
1.0
V
V
V
V
V
V
V
V
μA
μA
μA
μA
-
-
-
-
10
20
-
-
20
40
μA
μA
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 06 — 2 April 2010
4 of 21
NXP Semiconductors
74HC2G66; 74HCT2G66
Dual single-pole single-throw analog switch
Table 7.
Static characteristics
…continued
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
C
I
C
PD
C
S(ON)
V
IH
V
IL
I
I
I
S(OFF)
I
S(ON)
I
CC
ΔI
CC
C
I
C
PD
C
S(ON)
[1]
Conditions
−40 °C
to +85
°C
Min
Typ
[1]
3.5
9
8
1.6
1.2
-
0.1
0.1
-
-
3.5
9
8
Max
-
-
-
-
0.8
±1.0
1.0
1.0
10
375
-
-
-
-
-
-
−40 °C
to +125
°C
Unit
Min
-
-
-
2.0
-
-
-
-
-
-
-
-
-
Max
-
-
-
-
0.8
±1.0
1.0
1.0
20
410
-
-
-
pF
pF
pF
V
V
μA
μA
μA
μA
μA
pF
pF
pF
input capacitance
power dissipation
capacitance
ON-state capacitance
HIGH-level
input voltage
LOW-level
input voltage
input leakage current
OFF-state
leakage current
ON-state
leakage current
supply current
additional supply
current
input capacitance
power dissipation
capacitance
ON-state capacitance
V
CC
= 4.5 V to 5.5 V
V
CC
= 4.5 V to 5.5 V
nE; V
I
= V
CC
or GND; V
CC
= 5.5 V
nY or nZ; V
CC
= 5.5 V; see
Figure 5
nY or nZ; V
CC
= 5.5 V; see
Figure 6
nE, nY and nZ = V
CC
or GND;
V
CC
= 4.5 V to 5.5 V
nE = V
CC
−
2.1 V; I
O
= 0 A;
V
CC
= 4.5 V to 5.5 V;
74HCT2G66
2.0
-
-
-
-
-
-
-
-
-
Typical values are measured at T
amb
= 25
°C.
10.1 Test circuits
V
CC
V
IL
I
S
VI
V
CC
V
IH
nZ
I
S
VO
VI
nE
nY
GND
nE
nY
GND
nZ
I
S
VO
001aaj465
001aaj466
V
I
= V
CC
or GND and V
O
= GND or V
CC
.
V
I
= V
CC
or GND and V
O
= open circuit.
Fig 5.
Test circuit for measuring OFF-state
leakage current
Fig 6.
Test circuit for measuring ON-state
leakage current
74HC_HCT2G66_6
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 06 — 2 April 2010
5 of 21
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