AP9424GYT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Small Size & Lower Profile
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
D
30V
6.5mΩ
18A
S
Description
AP9424 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The PMPAK
®
3 x 3 package is special for voltage conversion
application using standard infrared reflow technique with the
backside heat sink to achieve the good thermal performance.
D
D
D
S
S
S
G
PMPAK
®
3 x 3
Absolute Maximum Ratings@T
j
=25
o
.
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
3
, V
GS
@ 10V
Drain Current
3
, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
18
14.7
72
3.57
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
3
Value
4
35
Unit
℃/W
℃/W
1
201408282
Data and specifications subject to change without notice
AP9424GYT-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=15A
V
GS
=4.5V, I
D
=10A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=15A
V
DS
=24V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=15A
V
DS
=15V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
R
G
=3.3Ω
V
GS
=10V
V
GS
=0V
V
DS
=25V
Min.
30
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
34
-
-
21
3.5
13
12
10
34
18
340
250
0.9
Max. Units
-
6.5
9
3
-
10
+100
33
-
-
-
-
-
-
-
-
1.8
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
1150 1840
.
f=1.0MHz
f=1.0MHz
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=2.9A, V
GS
=0V
I
S
=10A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
36
32
Max. Units
1.2
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board, t <10sec, 85
o
C at steady state.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9424GYT-HF
200
160
T
A
=25 C
160
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10V
7.0V
6.0V
5.0V
T
A
= 150
o
C
120
10V
7.0V
6.0V
5.0V
V
G
= 4.0V
120
V
G
= 4.0V
80
80
40
40
0
0
4
8
12
16
0
0
2
4
6
8
10
12
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
9
2.4
I
D
= 10 A
T
A
=25
℃
8
I
D
=15A
V
G
=10V
2.0
R
DS(ON)
(m
Ω
)
7
Normalized R
DS(ON)
1.6
6
.
1.2
5
0.8
4
0.4
2
4
6
8
10
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
20
1.2
16
Normalized V
GS(th)
1.0
I
S
(A)
12
T
j
=150 C
8
o
T
j
=25 C
o
0.8
0.6
4
0.4
0
0.2
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9424GYT-HF
10
2000
f=1.0MHz
I
D
= 15 A
V
DS
=15V
V
GS
, Gate to Source Voltage (V)
8
1600
6
C (pF)
1200
C
iss
4
800
2
400
C
oss
C
rss
0
0
10
20
30
40
0
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Operation in this area
limited by R
DS(ON)
100us
10
Normalized Thermal Response (R
thja
)
Duty factor=0.5
0.2
0.1
0.1
0.05
I
D
(A)
1ms
1
10ms
100ms
1s
T
A
=25 C
Single Pulse
o
.
0.02
0.01
P
DM
0.01
Single Pulse
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thia
=85
℃/W
0.1
DC
0.01
0.01
0.1
1
10
100
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP9424GYT-HF
MARKING INFORMATION
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
9424GYT
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
5
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