74HC1G00; 74HCT1G00
2-input NAND gate
Rev. 04 — 11 July 2007
Product data sheet
1. General description
The 74HC1G00 and 74HCT1G00 are high speed Si-gate CMOS devices. They provide a
2-input NAND function.
The HC device has CMOS input switching levels and supply voltage range 2 V to 6 V.
The HCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V.
The standard output currents are half those of the 74HC00 and 74HCT00.
2. Features
I
I
I
I
I
Symmetrical output impedance
High noise immunity
Low power dissipation
Balanced propagation delays
SOT353-1 and SOT753 package options
3. Ordering information
Table 1.
Ordering information
Package
Temperature range Name
74HC1G00GW
74HCT1G00GW
74HC1G00GV
74HCT1G00GV
−40 °C
to +125
°C
−40 °C
to +125
°C
Description
Version
SOT353-1
SOT753
TSSOP5 plastic thin shrink small outline package; 5 leads;
body width 1.25 mm
SC-74A
plastic surface-mounted package; 5 leads
Type number
4. Marking
Table 2.
Marking codes
Marking
HA
TA
H00
T00
Type number
74HC1G00GW
74HCT1G00GW
74HC1G00GV
74HCT1G00GV
NXP Semiconductors
74HC1G00; 74HCT1G00
2-input NAND gate
5. Functional diagram
B
1
2
B
A
1
Y
4
2
mna097
mna098
&
4
A
Y
mna099
Fig 1. Logic symbol
Fig 2. IEC logic symbol
Fig 3. Logic diagram
6. Pinning information
6.1 Pinning
74HC1G00
74HCT1G00
B
A
1
2
5
V
CC
GND
3
001aaf086
4
Y
Fig 4. Pin configuration
6.2 Pin description
Table 3.
Symbol
B
A
GND
Y
V
CC
Pin description
Pin
1
2
3
4
5
Description
data input
data input
ground (0 V)
data output
supply voltage
7. Functional description
Table 4.
Function table
H = HIGH voltage level; L = LOW voltage level
Input
A
L
L
H
H
74HC_HCT1G00_4
Output
B
L
H
L
H
Y
H
H
H
L
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 11 July 2007
2 of 10
NXP Semiconductors
74HC1G00; 74HCT1G00
2-input NAND gate
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
[1]
Symbol
V
CC
I
IK
I
OK
I
O
I
CC
I
GND
T
stg
P
tot
[1]
[2]
Parameter
supply voltage
input clamping current
output clamping current
output current
supply current
ground current
storage temperature
total power dissipation
Conditions
V
I
<
−0.5
V or V
I
> V
CC
+ 0.5 V
V
O
<
−0.5
V or V
O
> V
CC
+ 0.5 V
−0.5
V < V
O
< V
CC
+ 0.5 V
Min
−0.5
-
-
-
-
−25
−65
Max
+7.0
±20
±20
±12.5
25
-
+150
200
Unit
V
mA
mA
mA
mA
mA
°C
mW
T
amb
=
−40 °C
to +125
°C
[2]
-
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
Above 55
°C
the value of P
tot
derates linearly with 2.5 mW/K.
9. Recommended operating conditions
Table 6.
Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
V
CC
V
I
V
O
T
amb
∆t/∆V
supply voltage
input voltage
output voltage
ambient temperature
input transition rise
and fall rate
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
Conditions
Min
2.0
0
0
−40
-
-
-
74HC1G00
Typ
5.0
-
-
+25
-
-
-
Max
6.0
V
CC
V
CC
+125
625
139
83
Min
4.5
0
0
−40
-
-
-
74HCT1G00
Typ
5.0
-
-
+25
-
-
-
Max
5.5
V
CC
V
CC
+125
-
139
-
V
V
V
°C
ns/V
ns/V
ns/V
Unit
10. Static characteristics
Table 7.
Static characteristics
Voltages are referenced to GND (ground = 0 V). All typical values are measured at T
amb
= 25
°
C.
Symbol
Parameter
Conditions
−40 °C
to +85
°C
Min
For type 74HC1G00
V
IH
HIGH-level input
voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
IL
LOW-level input
voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
1.5
3.15
4.2
-
-
-
1.2
2.4
3.2
0.8
2.1
2.8
-
-
-
0.5
1.35
1.8
1.5
3.15
4.2
-
-
-
-
-
-
0.5
1.35
1.8
V
V
V
V
V
V
Typ
Max
−40 °C
to +125
°C
Min
Max
Unit
74HC_HCT1G00_4
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 11 July 2007
3 of 10
NXP Semiconductors
74HC1G00; 74HCT1G00
2-input NAND gate
Table 7.
Static characteristics
…continued
Voltages are referenced to GND (ground = 0 V). All typical values are measured at T
amb
= 25
°
C.
Symbol
V
OH
Parameter
HIGH-level output
voltage
Conditions
V
I
= V
IH
or V
IL
I
O
=
−20 µA;
V
CC
= 2.0 V
I
O
=
−20 µA;
V
CC
= 4.5 V
I
O
=
−20 µA;
V
CC
= 6.0 V
I
O
=
−2.0
mA; V
CC
= 4.5 V
I
O
=
−2.6
mA; V
CC
= 6.0 V
V
OL
LOW-level output
voltage
V
I
= V
IH
or V
IL
I
O
= 20
µA;
V
CC
= 2.0 V
I
O
= 20
µA;
V
CC
= 4.5 V
I
O
= 20
µA;
V
CC
= 6.0 V
I
O
= 2.0 mA; V
CC
= 4.5 V
I
O
= 2.6 mA; V
CC
= 6.0 V
I
I
I
CC
C
I
V
IH
V
IL
V
OH
input leakage current
supply current
input capacitance
HIGH-level input
voltage
LOW-level input
voltage
HIGH-level output
voltage
V
CC
= 4.5 V to 5.5 V
V
CC
= 4.5 V to 5.5 V
V
I
= V
IH
or V
IL
I
O
=
−20 µA;
V
CC
= 4.5 V
I
O
=
−2.0
mA; V
CC
= 4.5 V
V
OL
LOW-level output
voltage
V
I
= V
IH
or V
IL
I
O
= 20
µA;
V
CC
= 4.5 V
I
O
= 2.0 mA; V
CC
= 4.5 V
I
I
I
CC
∆I
CC
C
I
input leakage current
supply current
additional supply
current
input capacitance
V
I
= V
CC
or GND; V
CC
= 5.5 V
V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 5.5 V
per input; V
CC
= 4.5 V to 5.5 V;
V
I
= V
CC
−
2.1 V; I
O
= 0 A
-
-
-
-
-
-
0
0.15
-
-
-
1.5
0.1
0.33
1.0
10
500
-
-
-
-
-
-
-
0.1
0.4
1.0
20
850
-
V
V
µA
µA
µA
pF
4.4
4.13
4.5
4.32
-
-
4.4
3.7
-
-
V
V
V
I
= V
CC
or GND; V
CC
= 6.0 V
V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 6.0 V
-
-
-
-
-
-
-
-
2.0
-
0
0
0
0.15
0.16
-
-
1.5
1.6
1.2
0.1
0.1
0.1
0.33
0.33
1.0
10
-
-
0.8
-
-
-
-
-
-
-
-
2.0
-
0.1
0.1
0.1
0.4
0.4
1.0
20
-
-
0.8
V
V
V
V
V
µA
µA
pF
V
V
1.9
4.4
5.9
4.13
5.63
2.0
4.5
6.0
4.32
5.81
-
-
-
-
-
1.9
4.4
5.9
3.7
5.2
-
-
-
-
-
V
V
V
V
V
−40 °C
to +85
°C
Min
Typ
Max
−40 °C
to +125
°C
Min
Max
Unit
For type 74HCT1G00
74HC_HCT1G00_4
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 11 July 2007
4 of 10
NXP Semiconductors
74HC1G00; 74HCT1G00
2-input NAND gate
11. Dynamic characteristics
Table 8.
Dynamic characteristics
GND = 0 V; t
r
= t
f
≤
6.0 ns; All typical values are measured at T
amb
= 25
°
C. For test circuit see
Figure 6
Symbol Parameter
For type 74HC1G00
t
pd
propagation delay A and B to Y; see
Figure 5
V
CC
= 2.0 V; C
L
= 50 pF
V
CC
= 4.5 V; C
L
= 50 pF
V
CC
= 5.0 V; C
L
= 15 pF
V
CC
= 6.0 V; C
L
= 50 pF
C
PD
power dissipation V
I
= GND to V
CC
capacitance
propagation delay A and B to Y; see
Figure 5
V
CC
= 4.5 V; C
L
= 50 pF
V
CC
= 5.0 V; C
L
= 15 pF
C
PD
power dissipation V
I
= GND to V
CC
−
1.5 V
capacitance
t
pd
is the same as t
PLH
and t
PHL
.
C
PD
is used to determine the dynamic power dissipation P
D
(µW).
P
D
= C
PD
×
V
CC2
×
f
i
+
∑
(C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz; f
o
= output frequency in MHz
C
L
= output load capacitance in pF
V
CC
= supply voltage in Volts
∑
(C
L
×
V
CC2
×
f
o
) = sum of outputs
[2]
[2]
[1]
Conditions
−40 °C
to +85
°C
Min
Typ
Max
−40 °C
to +125
°C
Unit
Min
Max
-
-
-
-
-
25
9
7
8
19
115
23
-
20
-
-
-
-
-
-
135
27
-
23
-
ns
ns
ns
ns
pF
For type 74HCT1G00
t
pd
[1]
-
-
-
12
10
21
24
-
-
-
-
-
27
-
-
ns
ns
pF
[1]
[2]
12. Waveforms
A, B input
V
M
V
CC
t
PHL
t
PLH
PULSE
GENERATOR
V
I
DUT
RT
CL
V
O
Y output
V
M
mna100
mna101
For HC1G: V
M
= 0.5
×
V
CC
; V
I
= GND to V
CC
For HCT1G: V
M
= 1.3 V; V
I
= GND to 3.0 V
Test data is given in
Table 8.
C
L
= Load capacitance including jig and probe
capacitance.
R
T
= Termination resistance should be equal to
output impedance Z
o
of the pulse generator.
Fig 5. Input to output propagation delays
Fig 6. Load circuitry for switching times
74HC_HCT1G00_4
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 11 July 2007
5 of 10
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