电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

HD08

产品描述BRIDGE RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小317KB,共2页
制造商DIOTECH
官网地址http://www.kdiode.com/
下载文档 选型对比 全文预览

HD08概述

BRIDGE RECTIFIER DIODE

文档预览

下载PDF文档
HD01 THRU HD10
MINI SILICON SURFACE MOUNT BRIDGE RECTIFIER
Reverse Voltage - 100 to 1000 Volts
Forward Current - 0.8 Ampere
FEATURES
Surge overload rating - 30 Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
Glass passivated device
Polarity symbols molded on body
MBS
.275(7.0)MAX
.067(1.7)
.057(1.3)
.051(1.3)
.035(0.9)
.165(4.2)
.150(3.8)
.031(0.8)
.019(0.5) .106(2.7)
.09(2.3)
.014(.35)
.006(.15)
.043(1.1)
.027(0.7)
.067(1.7)
.057(1.3)
MECHANICAL DATA
Case : MBS, Molded Plastic
Epoxy : Device has UL flammability classification 94V-0
Mounting Position : Any
Weight : 0.22 grams (approx.)
Marking : Type Number
.193(4.9)
.177(4.5)
.106(2.7)
.09(2.3)
.008(0.2)
1
2
3
4
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (Note 1) @T
A
= 40°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
I
2
t Rating for Fusing (t < 8.3ms)
Forward Voltage per element
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
= 0.8A
@T
A
= 25°C
@T
A
= 125°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
HD01
100
70
HD02
200
140
HD04
HD06
HD08
HD10
Unit
400
280
0.8
600
420
800
560
1000
700
V
V
A
I
FSM
I
2
t
V
FM
I
RM
C
j
R
R
JA
JL
30
10
1.1
5.0
500
25
85
20
-55 to +150
A
A
2
s
V
µA
pF
°C/W
°C
Typical Junction Capacitance per leg (Note 2)
Typical Thermal Resistance per leg (Note 1)
Operating and Storage Temperature Range
T
j
, T
STG
Note: 1. Mounted on glass epoxy PC board with 1.3mm
2
solder pad.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

HD08相似产品对比

HD08 HD01 HD02 HD06 HD10
描述 BRIDGE RECTIFIER DIODE 0.8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 0.8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2547  1039  1877  36  2748  30  53  49  11  51 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved