74AUP2GU04
Low-power dual unbuffered inverter
Rev. 02 — 3 July 2009
Product data sheet
1. General description
The 74AUP2GU04 provides two unbuffered inverting gates.
This device ensures a very low static and dynamic power consumption across the entire
V
CC
range from 0.8 V to 3.6 V.
2. Features
I
Wide supply voltage range from 0.8 V to 3.6 V
I
High noise immunity
I
ESD protection:
N
HBM JESD22-A114E Class 3A exceeds 5000 V
N
MM JESD22-A115-A exceeds 200 V
N
CDM JESD22-C101C exceeds 1000 V
I
Low static power consumption; I
CC
= 0.9
µA
(maximum)
I
Latch-up performance exceeds 100 mA per JESD 78 Class II
I
Inputs accept voltages up to 3.6 V
I
Multiple package options
I
Specified from
−40 °C
to +85
°C
and
−40 °C
to +125
°C
3. Ordering information
Table 1.
Ordering information
Package
Temperature range Name
74AUP2GU04GW
74AUP2GU04GM
74AUP2GU04GF
−40 °C
to +125
°C
−40 °C
to +125
°C
−40 °C
to +125
°C
SC-88
XSON6
XSON6
Description
plastic surface-mounted package; 6 leads
Version
SOT363
Type number
plastic extremely thin small outline package; no leads; SOT886
6 terminals; body 1
×
1.45
×
0.5 mm
plastic extremely thin small outline package; no leads; SOT891
6 terminals; body 1
×
1
×
0.5 mm
NXP Semiconductors
74AUP2GU04
Low-power dual unbuffered inverter
4. Marking
Table 2.
Marking
Marking code
[1]
aD
aD
aD
Type number
74AUP2GU04GW
74AUP2GU04GM
74AUP2GU04GF
[1]
The pin 1 indicator is located on the lower left corner of the device, below the marking code.
5. Functional diagram
1
1A
1Y
6
1
1
6
540
Ω
V
CC
50
Ω
A
3
2A
2Y
4
3
1
4
Y
mnb106
mnb107
001aad073
Fig 1. Logic symbol
Fig 2. IEC logic symbol
Fig 3. Logic diagram (one gate)
6. Pinning information
6.1 Pinning
74AUP2GU04
74AUP2GU04
1A
GND
1
2
6
5
1Y
GND
V
CC
2A
2A
3
001aad699
1A
1
6
1Y
1A
GND
74AUP2GU04
1
2
3
6
5
4
1Y
V
CC
2Y
2
5
V
CC
3
4
2Y
2A
4
2Y
001aad700
001aad701
Transparent top view
Transparent top view
Fig 4. Pin configuration SOT363
(SC-88)
Fig 5. Pin configuration SOT886
(XSON6)
Fig 6. Pin configuration SOT891
(XSON6)
74AUP2GU04_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 3 July 2009
2 of 16
NXP Semiconductors
74AUP2GU04
Low-power dual unbuffered inverter
6.2 Pin description
Table 3.
Symbol
1A
GND
2A
2Y
V
CC
1Y
Pin description
Pin
1
2
3
4
5
6
Description
data input
ground (0 V)
data input
data output
supply voltage
data output
7. Functional description
Table 4.
Input
nA
L
H
[1]
H = HIGH voltage level;
L = LOW voltage level.
Function table
[1]
Output
nY
H
L
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
I
IK
V
I
I
OK
V
O
I
O
I
CC
I
GND
T
stg
P
tot
[1]
[2]
[3]
Parameter
supply voltage
input clamping current
input voltage
output clamping current
output voltage
output current
supply current
ground current
storage temperature
total power dissipation
Conditions
V
I
< 0 V
[1]
Min
−0.5
−50
−0.5
−50
[2]
Max
+4.6
-
+4.6
-
V
CC
+ 0.5
±20
50
-
+150
250
Unit
V
mA
V
mA
V
mA
mA
mA
°C
mW
V
O
< 0 V
V
O
= 0 V to V
CC
−0.5
-
-
−50
−65
T
amb
=
−40 °C
to +125
°C
[3]
-
The minimum input voltage ratings may be exceeded if the input current ratings are observed.
The output voltage ratings may be exceeded if the output current ratings are observed.
For SC-88 packages: above 87.5
°C
the value of P
tot
derates linearly with 4.0 mW/K.
For XSON6 packages: above 118
°C
the value of P
tot
derates linearly with 7.8 mW/K.
74AUP2GU04_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 3 July 2009
3 of 16
NXP Semiconductors
74AUP2GU04
Low-power dual unbuffered inverter
9. Recommended operating conditions
Table 6.
Symbol
V
CC
V
I
V
O
T
amb
∆t/∆V
Recommended operating conditions
Parameter
supply voltage
input voltage
output voltage
ambient temperature
input transition rise and fall rate
V
CC
= 0.8 V to 3.6 V
Conditions
Min
0.8
0
0
−40
0
Max
3.6
3.6
V
CC
+125
200
Unit
V
V
V
°C
ns/V
10. Static characteristics
Table 7.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
T
amb
= 25
°C
V
IH
V
IL
V
OH
HIGH-level input voltage
LOW-level input voltage
HIGH-level output voltage
V
CC
= 0.8 V to 3.6 V
V
CC
= 0.8 V to 3.6 V
V
I
= GND or V
CC
I
O
=
−20 µA;
V
CC
= 0.8 V to 3.6 V
I
O
=
−1.1
mA; V
CC
= 1.1 V
I
O
=
−1.7
mA; V
CC
= 1.4 V
I
O
=
−1.9
mA; V
CC
= 1.65 V
I
O
=
−2.3
mA; V
CC
= 2.3 V
I
O
=
−3.1
mA; V
CC
= 2.3 V
I
O
=
−2.7
mA; V
CC
= 3.0 V
I
O
=
−4.0
mA; V
CC
= 3.0 V
V
OL
LOW-level output voltage
V
I
= GND or V
CC
I
O
= 20
µA;
V
CC
= 0.8 V to 3.6 V
I
O
= 1.1 mA; V
CC
= 1.1 V
I
O
= 1.7 mA; V
CC
= 1.4 V
I
O
= 1.9 mA; V
CC
= 1.65 V
I
O
= 2.3 mA; V
CC
= 2.3 V
I
O
= 3.1 mA; V
CC
= 2.3 V
I
O
= 2.7 mA; V
CC
= 3.0 V
I
O
= 4.0 mA; V
CC
= 3.0 V
I
I
I
CC
C
I
C
O
input leakage current
supply current
input capacitance
output capacitance
V
I
= GND to 3.6 V; V
CC
= 0 V to 3.6 V
V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 0.8 V to 3.6 V
V
CC
= 0 V to 3.6 V; V
I
= GND or V
CC
V
O
= GND; V
CC
= 0 V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.5
1.8
0.1
0.3
×
V
CC
0.31
0.31
0.31
0.44
0.31
0.44
±0.1
0.5
-
-
V
V
V
V
V
V
V
V
µA
µA
pF
pF
V
CC
−
0.1
1.11
1.32
2.05
1.9
2.72
2.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
0.75
×
V
CC
-
0.75
×
V
CC
-
-
-
-
V
0.25
×
V
CC
V
Conditions
Min
Typ
Max
Unit
74AUP2GU04_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 3 July 2009
4 of 16
NXP Semiconductors
74AUP2GU04
Low-power dual unbuffered inverter
Table 7.
Static characteristics
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
T
amb
=
−40 °C
to +85
°C
V
IH
V
IL
V
OH
HIGH-level input voltage
LOW-level input voltage
HIGH-level output voltage
V
CC
= 0.8 V to 3.6 V
V
CC
= 0.8 V to 3.6 V
V
I
= GND or V
CC
I
O
=
−20 µA;
V
CC
= 0.8 V to 3.6 V
I
O
=
−1.1
mA; V
CC
= 1.1 V
I
O
=
−1.7
mA; V
CC
= 1.4 V
I
O
=
−1.9
mA; V
CC
= 1.65 V
I
O
=
−2.3
mA; V
CC
= 2.3 V
I
O
=
−3.1
mA; V
CC
= 2.3 V
I
O
=
−2.7
mA; V
CC
= 3.0 V
I
O
=
−4.0
mA; V
CC
= 3.0 V
V
OL
LOW-level output voltage
V
I
= GND or V
CC
I
O
= 20
µA;
V
CC
= 0.8 V to 3.6 V
I
O
= 1.1 mA; V
CC
= 1.1 V
I
O
= 1.7 mA; V
CC
= 1.4 V
I
O
= 1.9 mA; V
CC
= 1.65 V
I
O
= 2.3 mA; V
CC
= 2.3 V
I
O
= 3.1 mA; V
CC
= 2.3 V
I
O
= 2.7 mA; V
CC
= 3.0 V
I
O
= 4.0 mA; V
CC
= 3.0 V
I
I
I
CC
input leakage current
supply current
V
I
= GND to 3.6 V; V
CC
= 0 V to 3.6 V
V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 0.8 V to 3.6 V
V
CC
= 0.8 V to 3.6 V
V
CC
= 0.8 V to 3.6 V
V
I
= GND or V
CC
I
O
=
−20 µA;
V
CC
= 0.8 V to 3.6 V
I
O
=
−1.1
mA; V
CC
= 1.1 V
I
O
=
−1.7
mA; V
CC
= 1.4 V
I
O
=
−1.9
mA; V
CC
= 1.65 V
I
O
=
−2.3
mA; V
CC
= 2.3 V
I
O
=
−3.1
mA; V
CC
= 2.3 V
I
O
=
−2.7
mA; V
CC
= 3.0 V
I
O
=
−4.0
mA; V
CC
= 3.0 V
V
CC
−
0.11 -
0.6
×
V
CC
0.93
1.17
1.77
1.67
2.40
2.30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.1
0.3
×
V
CC
0.37
0.35
0.33
0.45
0.33
0.45
±0.5
0.9
V
V
V
V
V
V
V
V
µA
µA
V
CC
−
0.1
0.7
×
V
CC
1.03
1.30
1.97
1.85
2.67
2.55
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
V
V
V
V
V
0.75
×
V
CC
-
-
-
-
V
0.25
×
V
CC
V
Conditions
Min
Typ
Max
Unit
T
amb
=
−40 °C
to +125
°C
V
IH
V
IL
V
OH
HIGH-level input voltage
LOW-level input voltage
HIGH-level output voltage
0.75
×
V
CC
-
-
-
-
V
0.25
×
V
CC
V
74AUP2GU04_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 3 July 2009
5 of 16
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