74AHC1G125; 74AHCT1G125
Bus buffer/line driver; 3-state
Rev. 09 — 22 June 2009
Product data sheet
1. General description
74AHC1G125 and 74AHCT1G125 are high-speed Si-gate CMOS devices. They provide
one non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by
the output enable input (OE). A HIGH at OE causes the output to assume a
high-impedance OFF-state.
The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V.
The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V.
2. Features
I
I
I
I
I
I
Symmetrical output impedance
High noise immunity
Low power dissipation
Balanced propagation delays
Multiple package options
ESD protection:
N
HBM JESD22-A114E: exceeds 2000 V
N
MM JESD22-A115-A: exceeds 200 V
N
CDM JESD22-C101C: exceeds 1000 V
I
Specified from
−40 °C
to +125
°C
3. Ordering information
Table 1.
Ordering information
Package
Temperature range
74AHC1G125GW
74AHCT1G125GW
74AHC1G125GV
74AHCT1G125GV
74AHC1G125GM
74AHCT1G125GM
74AHC1G125GF
74AHCT1G125GF
−40 °C
to +125
°C
XSON6
−40 °C
to +125
°C
XSON6
plastic extremely thin small outline package; no SOT886
leads; 6 terminals; body 1
×
1.45
×
0.5 mm
plastic extremely thin small outline package;
no leads; 6 terminals; body 1
×
1
×
0.5 mm
SOT891
−40 °C
to +125
°C
SC-74A
−40 °C
to +125
°C
Name
TSSOP5
Description
plastic thin shrink small outline package;
5 leads; body width 1.25 mm
plastic surface-mounted package; 5 leads
Version
SOT353-1
SOT753
Type number
NXP Semiconductors
74AHC1G125; 74AHCT1G125
Bus buffer/line driver; 3-state
4. Marking
Table 2.
Marking codes
Marking
[1]
AM
CM
A25
C25
AM
CM
AM
CM
Type number
74AHC1G125GW
74AHCT1G125GW
74AHC1G125GV
74AHCT1G125GV
74AHC1G125GM
74AHCT1G125GM
74AHC1G125GF
74AHCT1G125GF
[1]
The pin 1 indicator is located on the lower left corner of the device, below the marking code.
5. Functional diagram
2
A
Y
4
2
4
A
1
Y
1
OE
mna118
EN
mna119
OE
mna120
Fig 1.
Logic symbol
Fig 2.
IEC logic symbol
Fig 3.
Logic diagram
6. Pinning information
6.1 Pinning
74AHC1G125
74AHCT1G125
74AHC1G125
74AHCT1G125
OE
A
1
2
GND
GND
3
001aaf101
OE
5
V
CC
1
6
V
CC
OE
A
74AHC1G125
74AHCT1G125
1
2
3
6
5
4
V
CC
n.c.
Y
A
2
5
n.c.
3
4
Y
GND
4
Y
001aaj971
001aaj972
Transparent top view
Transparent top view
Fig 4.
Pin configuration
SOT353-1 and SOT753
Fig 5.
Pin configuration SOT886
Fig 6.
Pin configuration SOT891
74AHC_AHCT1G125_9
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 09 — 22 June 2009
2 of 16
NXP Semiconductors
74AHC1G125; 74AHCT1G125
Bus buffer/line driver; 3-state
6.2 Pin description
Table 3.
Symbol
OE
A
GND
Y
n.c.
V
CC
Pin description
Pin
SOT353-1/SOT753
1
2
3
4
-
5
SOT886/SOT891
1
2
3
4
5
6
output enable input
data input
ground (0 V)
data output
not connected
supply voltage
Description
7. Functional description
Table 4.
Function table
H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state
Inputs
OE
L
L
H
A
L
H
X
Output
Y
L
H
Z
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
V
I
I
IK
I
OK
I
O
I
CC
I
GND
T
stg
P
tot
[1]
[2]
Parameter
supply voltage
input voltage
input clamping current
output clamping current
output current
supply current
ground current
storage temperature
total power dissipation
Conditions
Min
−0.5
−0.5
Max
+7.0
+7.0
-
±20
±25
75
-
+150
250
Unit
V
V
mA
mA
mA
mA
mA
°C
mW
V
I
<
−0.5
V
V
O
<
−0.5
V or V
O
> V
CC
+ 0.5 V
−0.5
V < V
O
< V
CC
+ 0.5 V
[1]
[1]
−20
-
-
-
−75
−65
T
amb
=
−40 °C
to +125
°C
[2]
-
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
For TSSOP5 and SC-74A packages: above 87.5
°C
the value of P
tot
derates linearly with 4.0 mW/K.
For XSON6 packages: above 118
°C
the value of P
tot
derates linearly with 7.8 mW/K.
74AHC_AHCT1G125_9
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 09 — 22 June 2009
3 of 16
NXP Semiconductors
74AHC1G125; 74AHCT1G125
Bus buffer/line driver; 3-state
9. Recommended operating conditions
Table 6.
Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
V
CC
V
I
V
O
T
amb
∆t/∆V
supply voltage
input voltage
output voltage
ambient temperature
input transition rise
and fall rate
V
CC
= 3.3 V
±
0.3 V
V
CC
= 5.0 V
±
0.5 V
Conditions
Min
2.0
0
0
−40
-
-
74AHC1G125
Typ
5.0
-
-
+25
-
-
Max
5.5
5.5
V
CC
+125
100
20
74AHCT1G125
Min
4.5
0
0
−40
-
-
Typ
5.0
-
-
+25
-
-
Max
5.5
5.5
V
CC
+125
-
20
V
V
V
°C
ns/V
ns/V
Unit
10. Static characteristics
Table 7.
Static characteristics
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
74AHC1G125
V
IH
HIGH-level
input voltage
V
CC
= 2.0 V
V
CC
= 3.0 V
V
CC
= 5.5 V
V
IL
LOW-level
input voltage
V
CC
= 2.0 V
V
CC
= 3.0 V
V
CC
= 5.5 V
V
OH
HIGH-level
V
I
= V
IH
or V
IL
output voltage
I
O
=
−50 µA;
V
CC
= 2.0 V
I
O
=
−50 µA;
V
CC
= 3.0 V
I
O
=
−50 µA;
V
CC
= 4.5 V
I
O
=
−4.0
mA; V
CC
= 3.0 V
I
O
=
−8.0
mA; V
CC
= 4.5 V
V
OL
LOW-level
V
I
= V
IH
or V
IL
output voltage
I
O
= 50
µA;
V
CC
= 2.0 V
I
O
= 50
µA;
V
CC
= 3.0 V
I
O
= 50
µA;
V
CC
= 4.5 V
I
O
= 4.0 mA; V
CC
= 3.0 V
I
O
= 8.0 mA; V
CC
= 4.5 V
I
OZ
I
I
I
CC
OFF-state
V
I
= V
CC
or GND;
output current V
CC
= 5.5 V
input leakage
current
V
I
= 5.5 V or GND;
V
CC
= 0 V to 5.5 V
1.5
2.1
3.85
-
-
-
1.9
2.9
4.4
2.58
3.94
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.0
3.0
4.5
-
-
0
0
0
-
-
-
-
-
-
-
-
0.5
0.9
1.65
-
-
-
-
-
0.1
0.1
0.1
0.36
0.36
0.25
0.1
1.0
1.5
2.1
3.85
-
-
-
1.9
2.9
4.4
2.48
3.8
-
-
-
-
-
-
-
-
-
-
-
0.5
0.9
1.65
-
-
-
-
-
0.1
0.1
0.1
0.44
0.44
2.5
1.0
10
1.5
2.1
3.85
-
-
-
1.9
2.9
4.4
2.40
3.70
-
-
-
-
-
-
-
-
-
-
-
0.5
0.9
1.65
-
-
-
-
-
0.1
0.1
0.1
0.55
0.55
10
2.0
40
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
µA
µA
µA
Conditions
Min
25
°C
Typ
Max
−40 °C
to +85
°C −40 °C
to +125
°C
Unit
Min
Max
Min
Max
supply current V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 5.5 V
74AHC_AHCT1G125_9
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 09 — 22 June 2009
4 of 16
NXP Semiconductors
74AHC1G125; 74AHCT1G125
Bus buffer/line driver; 3-state
Table 7.
Static characteristics
…continued
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
C
I
input
capacitance
HIGH-level
input voltage
LOW-level
input voltage
V
CC
= 4.5 V to 5.5 V
V
CC
= 4.5 V to 5.5 V
Conditions
Min
-
25
°C
Typ
1.5
Max
10
−40 °C
to +85
°C −40 °C
to +125
°C
Unit
Min
-
Max
10
Min
-
Max
10
pF
74AHCT1G125
V
IH
V
IL
V
OH
2.0
-
-
-
-
0.8
2.0
-
-
0.8
2.0
-
-
0.8
V
V
HIGH-level
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
output voltage
I
O
=
−50 µA
I
O
=
−8.0
mA
LOW-level
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
output voltage
I
O
= 50
µA
I
O
= 8.0 mA
OFF-state
V
I
= V
CC
or GND;
output current V
CC
= 5.5 V
input leakage
current
V
I
= 5.5 V or GND;
V
CC
= 0 V to 5.5 V
4.4
3.94
-
-
-
-
-
-
4.5
-
0
-
-
-
-
-
-
-
0.1
0.36
0.25
0.1
1.0
1.35
4.4
3.8
-
-
-
-
-
-
-
-
0.1
0.44
2.5
1.0
10
1.5
4.4
3.70
-
-
-
-
-
-
-
-
0.1
0.55
10
2.0
40
1.5
V
V
V
V
µA
µA
µA
mA
V
OL
I
OZ
I
I
I
CC
∆I
CC
supply current V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 5.5 V
additional
per input pin; V
I
= 3.4 V;
supply current other inputs at V
CC
or GND;
I
O
= 0 A; V
CC
= 5.5 V
input
capacitance
C
I
-
1.5
10
-
10
-
10
pF
11. Dynamic characteristics
Table 8.
Dynamic characteristics
GND = 0 V; For test circuit see
Figure 9.
Symbol Parameter
74AHC1G125
t
pd
propagation
delay
A to Y; see
Figure 7
V
CC
= 3.0 V to 3.6 V
C
L
= 15 pF
C
L
= 50 pF
V
CC
= 4.5 V to 5.5 V
C
L
= 15 pF
C
L
= 50 pF
[3]
[1]
[2]
Conditions
Min
25
°C
Typ
Max
−40 °C
to +85
°C −40 °C
to +125
°C
Unit
Min
Max
Min
Max
-
-
-
-
4.7
6.6
3.4
4.8
8.0
11.5
5.5
7.5
1.0
1.0
1.0
1.0
9.5
13.0
6.5
8.5
1.0
1.0
1.0
1.0
11.5
14.5
7.0
9.5
ns
ns
ns
ns
74AHC_AHCT1G125_9
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 09 — 22 June 2009
5 of 16
嵌入式系统
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