IRHQ3110: 产品描述Power Field-Effect Transistor, 3A I(D), 100V, 0.6ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC-28; 产品类别分立半导体晶体管; 文件大小200KB，共8页; 制造商Infineon(英飞凌); 官网地址http://www.infineon.com/

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IRHQ3110概述

Power Field-Effect Transistor, 3A I(D), 100V, 0.6ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC-28

IRHQ3110规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Infineon(英飞凌)
包装说明	LCC-28
Reach Compliance Code	unknown
ECCN代码	EAR99
雪崩能效等级（Eas）	85 mJ
配置	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压	100 V
最大漏极电流 (Abs) (ID)	3 A
最大漏极电流 (ID)	3 A
最大漏源导通电阻	0.6 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	S-CQCC-N28
JESD-609代码	e0
元件数量	4
端子数量	28
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	SQUARE
封装形式	CHIP CARRIER
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	N-CHANNEL
最大功率耗散 (Abs)	12 W
最大脉冲漏极电流 (IDM)	12 A
认证状态	Not Qualified
表面贴装	YES
端子面层	Tin/Lead (Sn/Pb)
端子形式	NO LEAD
端子位置	QUAD
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON

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PD-93785B

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (LCC-28)

Product Summary

Part Number Radiation Level

IRHQ7110

100K Rads (Si)

IRHQ3110

300K Rads (Si)

IRHQ4110

IRHQ8110

600K Rads (Si)

1000K Rads (Si)

DS(on)

0.6Ω

0.75Ω

3.0A

IRHQ7110

100V, QUAD N-CHANNEL

RAD-Hard HEXFET

MOSFET TECHNOLOGY

™

LCC-28

International Rectifier’s RAD-Hard

HEXFET

MOSFET

technology provides high performance power MOSFETs

for space applications. This technology has over a

decade of proven performance and reliability in satellite

applications. These devices have been characterized

for both Total Dose and Single Event Effects (SEE). The

combination of low R

DS(on)

and low gate charge reduces

the power losses in switching applications such as DC

to DC converters and motor control. These devices retain

all of the well established advantages of MOSFETs such

as voltage control, fast switching, ease of paralleling

and temperature stability of electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Low R

DS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Surface Mount

Light Weight

Absolute Maximum Ratings (Per Die)

Parameter

ID @ VGS = 12V, TC = 25°C

ID @ VGS = 12V, TC = 100°C

IDM

PD @ TC = 25°C

VGS

EAS

IAR

EAR

dv/dt

T STG

Continuous Drain Current

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

Storage Temperature Range

Pckg. Mounting Surface Temp.

Weight

For footnotes refer to the last page

300 (for 5s)

0.89 (Typical)

3.0

1.9

0.1

±20

3.0

1.2

3.0

-55 to 150

Pre-Irradiation

Units

W/°C

V/ns

°C

www.irf.com

07/20/11

IRHQ3110相似产品对比

	IRHQ3110	IRHQ3110PBF	IRHQ4110PBF	IRHQ7110PBF	IRHQ7110	IRHQ7110SCS	IRHQ8110PBF
描述	Power Field-Effect Transistor, 3A I(D), 100V, 0.6ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC-28	Power Field-Effect Transistor, 3A I(D), 100V, 0.6ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-28	Power Field-Effect Transistor, 3A I(D), 100V, 0.6ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-28	Power Field-Effect Transistor, 3A I(D), 100V, 0.6ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-28	Power Field-Effect Transistor, 3A I(D), 100V, 0.6ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC-28	Power Field-Effect Transistor, 3A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LCC-28	Power Field-Effect Transistor, 3A I(D), 100V, 0.75ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, LCC-28
是否Rohs认证	不符合	符合	符合	符合	不符合	不符合	符合
厂商名称	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)
包装说明	LCC-28	CHIP CARRIER, S-CQCC-N28	CHIP CARRIER, S-CQCC-N28	CHIP CARRIER, S-CQCC-N28	LCC-28	LCC-28	CHIP CARRIER, S-CQCC-N28
Reach Compliance Code	unknown	compliant	compliant	compliant	unknown	unknown	compliant
雪崩能效等级（Eas）	85 mJ	85 mJ	85 mJ	85 mJ	85 mJ	85 mJ	85 mJ
配置	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压	100 V	100 V	100 V	100 V	100 V	100 V	100 V
最大漏极电流 (ID)	3 A	3 A	3 A	3 A	3 A	3 A	3 A
最大漏源导通电阻	0.6 Ω	0.6 Ω	0.6 Ω	0.6 Ω	0.6 Ω	0.6 Ω	0.75 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	S-CQCC-N28	S-CQCC-N28	S-CQCC-N28	S-CQCC-N28	S-CQCC-N28	S-CQCC-N28	S-CQCC-N28
元件数量	4	4	4	4	4	1	4
端子数量	28	28	28	28	28	28	28
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
封装形状	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
封装形式	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大脉冲漏极电流 (IDM)	12 A	12 A	12 A	12 A	12 A	12 A	12 A
表面贴装	YES	YES	YES	YES	YES	YES	YES
端子形式	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
端子位置	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	-	150 °C

IRHQ3110

IRHQ3110概述

IRHQ3110规格参数

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