PD-96990C
IRHNA67264
JANSR2N7585U2
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
Product Summary
Part Number
IRHNA67264
IRHNA63264
Radiation Level
100 kRads(Si)
300 kRads(Si)
RDS(on)
0.040
0.040
I
D
50A
50A
QPL Part Number
JANSR2N7585U2
JANSF2N7585U2
SMD-2
250V, N-CHANNEL
REF: MIL-PRF-19500/760
R6
TECHNOLOGY
Description
IR HiRel R6 technology provides high performance power
MOSFETs for space applications. These devices have
been characterized for both Total Dose and Single Event
Effect (SEE) with useful performance up to LET of
90 (MeV/(mg/cm
2
). The combination of low R
DS
(on) and
low gate charge reduces the power losses in switching
applications such as DC-DC converters and motor
controllers. These devices retain all of the well established
advantages of MOSFETs such as voltage control, fast
switching and temperature stability of electrical parameters.
Features
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Hermetically Sealed
Electrically Isolated
Ceramic Package
Light Weight
Surface Mount
ESD Rating: Class 3A per MIL-STD-750, Method 1020
Absolute Maximum Ratings
Symbol
I
D1
@ V
GS
= 12V, T
C
= 25°C
I
DM
@ T
C
= 25°C
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Pre-Irradiation
Parameter
Value
50
31.5
200
250
2.0
±20
240
50
25
5.0
-55 to + 150
300 (for 5s)
3.3 (Typical)
g
W
W/°C
V
mJ
A
mJ
V/ns
°C
A
Units
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
I
D2
@ V
GS
= 12V, T
C
= 100°C Continuous Drain Current
For Footnotes, refer to the page 2.
1
International Rectifier HiRel Products, Inc.
2018-10-26
IRHNA67264
JANSR2N7585U2
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol
BV
DSS
BV
DSS
/T
J
R
DS(on)
V
GS(th)
V
GS(th)
/T
J
gfs
I
DSS
I
GSS
Q
G
Q
GS
Q
GD
t
d(on)
t
r
t
d(off)
t
f
Ls +L
D
C
iss
C
oss
C
rss
R
G
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-
Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Min. Typ. Max. Units
250
–––
–––
2.0
–––
37
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.3
–––
–––
V
V/°C
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 12V, I
D2
= 31.5A
––– 0.040
–––
4.0
V
V
DS
= V
GS
, I
D
= 1.0mA
-10.1 ––– mV/°C
V
DS
= 15V, I
D2
= 31.5A
––– –––
S
V
DS
= 200V, V
GS
= 0V
–––
10
µA
V
DS
= 200V,V
GS
= 0V,T
J
=125°C
–––
25
V
GS
= 20V
––– 100
nA
V
GS
= -20V
––– -100
I
D1
= 50A
––– 220
nC
V
DS
= 125V
–––
50
V
GS
= 12V
–––
70
V
DD
= 125V
–––
50
I
D1
= 50A
––– 150
ns
––– 100
R
G
= 2.35
V
GS
= 12V
–––
50
Measured from center of Drain
2.8
–––
nH
pad to center of Source pad
V
GS
= 0V
6912 –––
pF
V
DS
= 25V
940 –––
ƒ = 1.0MHz
10.8 –––
ƒ = 1.0MHz, open drain
0.52 –––
Source-Drain Diode Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
50
200
1.2
700
15
A
V
ns
µC
Test Conditions
T
J
=25°C, I
S
= 50A, V
GS
=0V
T
J
=25°C, I
F
= 50A,V
DD
≤
25V
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Thermal Resistance
Symbol
R
JC
R
J-PCB
Junction-to-Case
Junction-to-PC Board (Soldered to 2” sq copper clad board)
Parameter
Min.
–––
–––
Typ.
–––
1.6
Max.
0.5
–––
Units
°C/W
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
DD
= 50V, starting T
J
= 25°C, L = 0.19mH, Peak I
L
= 50A, V
GS
= 12V
V
I
SD
50A, di/dt
900A/µs, V
DD
250V, T
J
150°C
Pulse width
300 µs; Duty Cycle
2%
Total Dose Irradiation with V
GS
Bias. 12 volt V
GS
applied and V
DS
= 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with V
DS
Bias. 200 volt V
DS
applied and V
GS
= 0 during irradiation per MlL-STD-750, Method 1019, condition A.
2
International Rectifier HiRel Products, Inc.
2018-10-26
IRHNA67264
JANSR2N7585U2
Radiation Characteristics
Pre-Irradiation
IR HiRel radiation hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at IR Hirel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose
(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using
the same drive circuitry and test conditions in order to provide a direct comparison.
Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Symbol
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-2)
Diode Forward Voltage
Up to 300 kRads (Si)
1
Min.
250
2.0
–––
–––
–––
–––
–––
–––
Max.
–––
4.0
100
-100
10
0.041
0.040
1.2
V
V
nA
nA
µA
V
V
GS
= 0V, I
D
= 1.0mA
V
DS
= V
GS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
= 200V, V
GS
= 0V
V
GS
= 12V, I
D2
= 31.5A
V
GS
= 12V, I
D2
= 31.5A
V
GS
= 0V, I
S
= 50A
Units
Test Conditions
1. Part numbers IRHNA67264 (JANSR2N7585U2) and IRHNA63264 (JANSF2N7585U2)
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
(MeV/(mg/cm
2
))
44 ± 5%
61 ± 5%
90 ± 5%
Energy
(MeV)
1350 ± 5%
825 ± 5%
1470 ± 5%
Range
(µm)
125 ± 10%
66 ± 7.5%
80 ± 5%
VDS (V)
@ VGS=0V @ VGS=-5V @ VGS=-10V @ VGS=-15V @ VGS=-20V
250
250
75
250
250
75
250
250
–––
250
50
–––
40
–––
–––
300
250
200
150
100
50
0
0
-5
-10
Bias VGS (V)
-15
-20
Bias VDS (V)
LET=44 ± 5%
LET=61 ± 5%
LET=90 ± 5%
Fig a.
Typical Single Event Effect, Safe Operating Area
For Footnotes, refer to the page 2.
3
International Rectifier HiRel Products, Inc.
2018-10-26
IRHNA67264
JANSR2N7585U2
Pre-Irradiation
1000
TOP
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
5.0V
1000
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
10
5.0V
5.0V
60s PULSE WIDTH
Tj = 150°C
10
1
10
VDS , Drain-to-Source Voltage (V)
100
60s PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
3.0
Fig 2.
Typical Output Characteristics
ID = 50A
2.5
ID, Drain-to-Source Current (A)
2.0
T J = 150°C
100
1.5
T J = 25°C
VDS = 50V
6s PULSE WIDTH
5
5.5
6
6.5
7
7.5
8
1.0
0.5
VGS = 12V
0.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
10
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
RDS(on) , Drain-to -Source On Resistance (m
)
Fig 4.
Normalized On-Resistance Vs.
Temperature
RDS(on), Drain-to -Source On Resistance (m
)
160
140
120
100
80
60
40
20
0
4
6
8
10
12
14
16
18
20
T J = 25°C
T J = 150°C
ID = 50A
140
120
100
80
60
40
20
0
0
40
80
120
160
200
ID , Drain Current (A)
T J = 25°C
T J = 150°C
VGS = 12V
VGS, Gate -to -Source Voltage (V)
Fig 5.
Typical On-Resistance Vs Gate Voltage
4
Fig 6.
Typical On-Resistance Vs Drain Current
2018-10-26
International Rectifier HiRel Products, Inc.
IRHNA67264
JANSR2N7585U2
Pre-Irradiation
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
320
310
300
290
280
270
260
250
-60 -40 -20
0
20
40
60
80 100 120 140 160
5.0
ID = 1.0mA
4.5
VGS(th) Gate threshold Voltage (V)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
ID = 50µA
ID = 250µA
ID = 1.0mA
ID = 150mA
T J , Temperature ( °C )
T J , Temperature ( °C )
Fig 7.
Typical Drain-to-Source
Breakdown Voltage Vs Temperature
14000
12000
10000
8000
6000
4000
2000
0
1
10
100
VGS = 0V,
f = 1 MHz
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Fig 8.
Typical Threshold Voltage Vs
Temperature
20
ID = 50A
VGS, Gate-to-Source Voltage (V)
16
VDS = 200V
VDS = 125V
VDS = 50V
C, Capacitance (pF)
C iss
Coss
12
8
C rss
4
FOR TEST CIRCUIT
SEE FIGURE 17
0
0
50
100
150
200
250
VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 9.
Typical Capacitance Vs.
Drain-to-Source Voltage
1000
50
Fig 10.
Typical Gate Charge Vs.
Gate-to-Source Voltage
ISD, Reverse Drain Current (A)
100
T J = 150°C
10
T J = 25°C
ID, Drain Current (A)
40
30
20
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-to-Drain Voltage (V)
10
0
25
50
75
100
125
150
T C , Case Temperature (°C)
Fig 11.
Typical Source-Drain Diode Forward Voltage
5
Fig 12.
Maximum Drain Current Vs.Case Temperature
2018-10-26
International Rectifier HiRel Products, Inc.
PCB设计
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
