PD - 94239E
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-18)
Product Summary
Part Number Radiation Level R
DS(on)
IRHE57034
100K Rads (Si)
0.08Ω
IRHE53034
300K Rads (Si)
0.08Ω
IRHE54034
IRHE58034
500K Rads (Si)
1000K Rads (Si)
0.08Ω
0.1Ω
I
D
11.7A
11.7A
11.7A
11.7A
IRHE57034
JANSR2N7495U5
60V, N-CHANNEL
REF: MIL-PRF-19500/700
5
TECHNOLOGY
QPL Part Number
JANSR2N7495U5
JANSF2N7495U5
JANSG2N7495U5
JANSH2N7495U5
LCC-18
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low
RDS(on)
and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
11.7
7.4
46.8
25
0.2
±20
87
11.7
2.5
3.4
-55 to 150
300 (for 5s)
0.42 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
g
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1
04/27/06
IRHE57034, JANSR2N7495U5
Pre-Irradiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
60
—
—
2.0
7.0
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.058
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.1
—
—
0.08
4.0
—
10
25
100
-100
45
15
20
25
100
35
30
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
V GS = 12V, ID = 7.4A
Ã
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nA
nC
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 7.4A
Ã
VDS= 48V ,VGS=0V
VDS = 48V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 11.7A
VDS = 30V
VDD = 30V, ID = 11.7A,
VGS =12V, RG = 7.5Ω
ns
nH
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = 25V
f = 1.0MHz
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1250
520
16
—
—
—
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
trr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
11.7
46.8
1.8
125
420
Test Conditions
A
V
ns
nC
T
j
= 25°C, IS = 11.7A, VGS = 0V
Ã
Tj = 25°C, IF = 11.7A, di/dt
≤100A/µs
VDD
≤
25V
Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
RthJA
Junction-to-Case
Junction-to-PC board
Junction-to-Ambient
Min Typ Max Units
—
—
—
—
19
75
5.0
—
—
°C/W
Test Conditions
soldered to a copper-clad PC board
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHE57034, JANSR2N7495U5
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
ÄÅ
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
Ã
On-State Resistance (TO-3)
Static Drain-to-Source
Ã
On-State Resistance (LCC-18)
Diode Forward Voltage
Ã
Up to 500K Rads(Si)
1
1000K Rads (Si)
2
Units
Min
Max
Min
Max
60
2.0
—
—
—
—
—
—
—
4.0
100
-100
10
0.034
0.08
1.8
60
1.5
—
—
—
—
—
—
—
4.0
100
-100
25
0.043
0.1
1.8
V
nA
µA
Ω
Ω
V
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
= 48V, V
GS
=0V
V
GS
= 12V, I
D
=7.4A
V
GS
= 12V, I
D
=7.4A
V
GS
= 0V, IS = 11.7A
1. Part numbers IRHE57064 (JANSR2N7495U5), IRHE53064 (JANSF2N7495U5) and IRHE54064 (JANSH2N7495U5)
2. Part number IRHE58064 (JANSH2N7495U5)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Br
Xe
Au
LET
(MeV/(mg/cm
2
))
37.3
63
86.6
Energy
(MeV)
285
300
2068
V
DS
(V)
Range
(µm)
@V
GS
=0V @V
GS
= -5V @V
GS
= -10V @V
GS
=-15V @V
GS
=-20V
36.8
60
60
60
60
40
29
46
46
35
25
15
106
35
35
27
20
14
70
60
50
40
30
20
10
0
0
-5
-10
VGS
-15
-20
VDS
Br
Xe
Au
Fig a.
Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHE57034, JANSR2N7495U5
Pre-Irradiation
100
I
D
, Drain-to-Source Current (A)
10
I
D
, Drain-to-Source Current (A)
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
100
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
10
5.0V
5.0V
1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
12A
I
D
=
11.7A
I
D
, Drain-to-Source Current (A)
T
J
= 150
°
C
1.5
10
1.0
T
J
= 25
°
C
0.5
1
5.0
V DS = 25V
15
20µs PULSE WIDTH
6.0
7.0
8.0
9.0
0.0
-60 -40 -20
V
GS
= 12V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
4
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Pre-Irradiation
IRHE57034, JANSR2N7495U5
3000
2400
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
=
11.7A
12A
V
DS
= 48V
V
DS
= 30V
V
DS
= 12V
16
C, Capacitance (pF)
Ciss
1800
12
Coss
1200
8
600
Crss
4
0
1
10
100
0
0
10
20
FOR TEST CIRCUIT
SEE FIGURE 13
30
40
50
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
I
SD
, Reverse Drain Current (A)
10
T
J
= 150
°
C
ID, Drain-to-Source Current (A)
100µs
10
T
J
= 25
°
C
1
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
1
10
100
1000
VDS , Drain-toSource Voltage (V)
0.1
0.2
V
GS
= 0 V
0.8
1.4
2.0
2.6
10ms
V
SD
,Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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