LESHAN RADIO COMPANY, LTD.
NPN RF Amplifier Transistor
Surface Mount
COLLECTOR
3
MSC3130T1
3
2
1
2
BASE
1
EMITTER
CASE
318D–03, STYLE 1
SC–59
MAXIMUM RATINGS
(T
A
= 25 °C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Symbol
V
CBO
V
CEO
V
EBO
I
C
Symbol
P
D
T
J
T
stg
Value
15
10
3.0
50
Max
200
150
–55 ~ +150
Symbol
I
CBO
V
CEO
V
EBO
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
°C
°C
Min
—
10
3.0
75
—
1.4
Max
1.0
—
—
400
0.5
2.5
Unit
µAdc
Vdc
Vdc
—
Vdc
GHz
THERMAL CHARACTERISTICS
Characteristic
Power Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C)
Characteristic
Collector Cutoff Current
(V
CB
= 10 Vdc, I
E
= 0)
Collector-Emitter Breakdown Voltage
(I
C
= 2.0 mAdc, I
B
= 0)
Emitter-Base Breakdown Voltage
(I
E
= 10
µAdc,
I
C
= 0)
DC Current Gain
(1)
(V
CE
= 4.0 Vdc, I
C
= 5.0 mAdc)
Collector-Emitter Saturation Voltage
(I
C
= 20 mAdc, I
B
= 4.0 mAdc)
Current-Gain–Bandwidth Produc
(V
CB
= 4.0 Vdc, I
E
= -5.0 mAdc)
1. Pulse Test: Pulse Width < 300
µs,
D.C.<2%.
h
FE
V
CE(sat)
tf
T
DEVICE MARKING
Marking Symbol
1S
X
The “X” represents a smaller alpha digit Date Code. The Date Code
indicates the actual month in which the part was manufactured.
N5–1/1
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