IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BTA202X-800E
3Q Hi-Com Triac
22 May 2014
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full
pack" plastic package. This "series E" triac balances the requirements of commutation
performance and gate sensitivity and is intended for interfacing with low power drivers
including microcontrollers.
2. Features and benefits
•
•
•
•
•
•
•
•
•
3Q technology for improved noise immunity
Direct interfacing with low power drivers and microcontrollers
Good immunity to false turn-on by dV/dt
High commutation capability with sensitive gate
High voltage capability
Isolated mounting base package
Planar technology for voltage ruggedness and reliability
Sensitive gate for easy logic level triggering
Triggering in three quadrants only
3. Applications
•
•
•
•
General purpose motor controls
Large and small appliances (White Goods)
Loads such as contactors, circuit breakers, valves, dispensers and door locks
Lower-power highly inductive, resistive and safety loads
4. Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
T
j
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
junction temperature
RMS on-state current
full sine wave; T
h
≤ 110 °C;
Fig. 1;
Fig. 2; Fig. 3
Conditions
Min
-
-
-
-
Typ
-
-
-
-
Max
800
14
125
2
Unit
V
A
°C
A
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-2
20F
NXP Semiconductors
BTA202X-800E
3Q Hi-Com Triac
Symbol
I
GT
Parameter
gate trigger current
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
Min
0.5
0.5
0.5
Typ
-
-
-
Max
10
10
10
Unit
mA
mA
mA
Static characteristics
Dynamic characteristics
dV
D
/dt
rate of rise of off-state
voltage
rate of change of
commutating current
V
DM
= 536 V; T
j
= 125 °C;
R
GT1
= 220 Ω; (V
DM
= 67% of V
DRM
);
exponential waveform
dI
com
/dt
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 2 A;
dV
com
/dt = 20 V/µs; (snubberless
condition); gate open circuit
2
-
-
A/ms
-
500
-
V/µs
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
T1
T2
G
n.c.
main terminal 1
main terminal 2
gate
mounting base; isolated
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 2 3
TO-220F (SOT186A)
6. Ordering information
Table 3.
Ordering information
Package
Name
BTA202X-800E
BTA202X-800E/L01
TO-220F
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
Version
SOT186A
SOT186A
Type number
BTA202X-800E
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
22 May 2014
2 / 13
NXP Semiconductors
BTA202X-800E
3Q Hi-Com Triac
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
h
≤ 110 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
I t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
10
I
T(RMS)
(A)
8
2
Conditions
Min
-
-
-
-
-
-
-
-
Max
800
2
14
15.4
0.98
100
2
5
0.5
150
125
003aac109
Unit
V
A
A
A
2
I t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
2
t
p
= 10 ms; sine-wave pulse
I
T
= 1.5 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/µs
A s
A/µs
A
W
W
°C
°C
over any 20 ms period
-
-40
-
003aac111
3
I
T(RMS)
(A)
2
6
4
1
2
0
10
-2
10
-1
1
10
surge duration (s)
0
-50
0
50
100
T
h
(°C)
150
f = 50 Hz; T
h
= 110 °C
Fig. 1.
RMS on-state current as a function of surge
duration; maximum values
Fig. 2.
RMS on-state current as a function of heatsink
temperature; maximum values
BTA202X-800E
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
22 May 2014
3 / 13
NXP Semiconductors
BTA202X-800E
3Q Hi-Com Triac
3
P
tot
(W)
003aac112
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α
α = 180°
120°
90°
60°
30°
2
1
0
0
0.4
0.8
1.2
1.6
2
I
T(RMS)
(A)
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3.
10
3
I
TSM
(A)
Total power dissipation as a function of RMS on-state current; maximum values
003aac113
I
T
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
2
(1)
10
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤ 20 ms
(1) dI
T
/dt limit
Fig. 4.
Non-repetitive peak on-state current as a function of pulse width; maximum values
BTA202X-800E
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
22 May 2014
4 / 13
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