IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BTA201-600E
3Q Hi-Com Triac
11 June 2014
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT54 (TO-92) plastic
package. This "series E" triac balances the requirements of commutation performance
and gate sensitivity and is intended for interfacing with low power drivers and logic ICs
including microcontrollers.
2. Features and benefits
•
•
•
•
•
•
•
•
3Q technology for improved noise immunity
Direct triggering from low power drivers and logic ICs
High commutation capability with sensitive gate
High immunity to false turn-on by dV/dt
High voltage capability
Planar passivated for voltage ruggedness and reliability
Sensitive gate for easy logic level triggering
Triggering in three quadrants only
3. Applications
•
•
•
General purpose motor control
Small loads in washing machines
Solenoid drivers
4. Quick reference data
Table 1.
Symbol
V
DRM
I
TSM
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
state current
t
p
= 20 ms;
Fig. 4; Fig. 5
RMS on-state current
full sine wave; T
lead
≤ 54 °C;
Fig. 1;
Fig. 2; Fig. 3
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
1
-
10
mA
Conditions
Min
-
-
-
Typ
-
-
-
Max
600
12.5
1
Unit
V
A
A
Scan or click this QR code to view the latest information for this product
TO
-92
NXP Semiconductors
BTA201-600E
3Q Hi-Com Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
Min
1
1
Typ
-
-
Max
10
10
Unit
mA
mA
5. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
T2
G
T1
main terminal 2
gate
main terminal 1
321
Simplified outline
Graphic symbol
T2
sym051
T1
G
TO-92 (SOT54)
6. Ordering information
Table 3.
Ordering information
Package
Name
BTA201-600E
BTA201-600E/L02
TO-92
TO-92
Description
plastic single-ended leaded (through hole) package; 3 leads
plastic single-ended leaded (through hole) package; 3 leads
Version
SOT54
SOT54
Type number
BTA201-600E
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
11 June 2014
2 / 13
NXP Semiconductors
BTA201-600E
3Q Hi-Com Triac
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
full sine wave; T
lead
≤ 54 °C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.8 ms
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
I t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
j
1.2
I
T(RMS)
(A)
1
54.3 °C
2
Conditions
Min
-
-
-
-
-
-
-
-
Max
600
1
13.7
12.5
0.78
100
2
5
0.1
125
003aaa958
Unit
V
A
A
A
2
I t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
junction temperature
003aaa957
2
t
p
= 10 ms; SIN
I
T
1.5 A; I
G
0.2 A; dI
G
/dt = 0.2 A/µs
A s
A/µs
A
W
W
°C
over any 20 ms period
-
-40
3
I
T(RMS)
(A)
0.8
0.6
0.4
0.2
0
-50
2
1
0
50
150
100
T
lead
(°C)
0
10
-2
10
-1
1
10
surge duration (s)
Fig. 1.
RMS on-state current as a function of lead
temperature; maximum values
f = 50 Hz; T
lead
= 54 °C
Fig. 2.
RMS on-state current as a function of surge
duration; maximum values
BTA201-600E
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
11 June 2014
3 / 13
NXP Semiconductors
BTA201-600E
3Q Hi-Com Triac
1.5
P
tot
(W)
003aaa954
conduction
angle
(degrees)
30
60
90
120
180
form
factor
a
4
2.8
2.2
1.9
1.57
α
α = 180°
120°
90°
60°
30°
1
0.5
0
0
0.2
0.4
0.6
0.8
1
I
T(RMS)
(A)
1.2
α = conduction angle
Fig. 3.
Total power dissipation as a function of RMS on-state current; maximum values
10
3
I
TSM
(A)
003aaa955
I
T
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
2
(1)
10
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤ 20 ms
(1) dI
T
/dt limit
Fig. 4.
Non-repetitive peak on-state current as a function of pulse width; maximum values
BTA201-600E
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
11 June 2014
4 / 13
综合技术交流
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
