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AS29LV800T-80SI: 产品描述Flash, 512KX16, 80ns, PDSO44, PLASTIC, MO-175AA, SO-44; 产品类别存储存储; 文件大小231KB，共25页; 制造商ALSC [Alliance Semiconductor Corporation]

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AS29LV800T-80SI概述

Flash, 512KX16, 80ns, PDSO44, PLASTIC, MO-175AA, SO-44

AS29LV800T-80SI规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	ALSC [Alliance Semiconductor Corporation]
零件包装代码	SOIC
包装说明	SOP, SOP44,.63
针数	44
Reach Compliance Code	unknown
ECCN代码	EAR99
最长访问时间	80 ns
其他特性	DATA RETENTION > 20 YEARS
备用内存宽度	8
启动块	TOP
命令用户界面	YES
数据轮询	YES
数据保留时间-最小值	20
耐久性	100000 Write/Erase Cycles
JESD-30 代码	R-PDSO-G44
JESD-609代码	e0
长度	28.2 mm
内存密度	8388608 bit
内存集成电路类型	FLASH
内存宽度	16
功能数量	1
部门数/规模	1,2,1,15
端子数量	44
字数	524288 words
字数代码	512000
工作模式	ASYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	512KX16
封装主体材料	PLASTIC/EPOXY
封装代码	SOP
封装等效代码	SOP44,.63
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
并行/串行	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED
电源	3/3.3 V
编程电压	3 V
认证状态	Not Qualified
就绪/忙碌	YES
座面最大高度	3.1 mm
部门规模	16K,8K,32K,64K
最大待机电流	0.000005 A
最大压摆率	0.1 mA
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	2.7 V
标称供电电压 (Vsup)	3 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	Tin/Lead (Sn/Pb)
端子形式	GULL WING
端子节距	1.27 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
切换位	YES
类型	NOR TYPE
宽度	12.6 mm

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• Organization: 1M×8/512K×16

• Sector architecture

- One 16K; two 8K; one 32K; and fifteen 64K byte sectors

- One 8K; two 4K; one 16K; and fifteen 32K word sectors

- Boot code sector architecture—T (top) or B (bottom)

- Erase any combination of sectors or full chip

• Single 2.7-3.6V power supply for read/write operations

• Sector protection

• High speed 70/80/90/120 ns address access time

• Automated on-chip programming algorithm

- Automatically programs/verifies data at specified address

• Automated on-chip erase algorithm

- Automatically preprograms/erases chip or specified sectors

• Hardware RESET pin

- Resets internal state machine to read mode

• Low power consumption

- 200 nA typical automatic sleep mode current

- 200 nA typical standby current

- 10 mA typical read current

• JEDEC standard software, packages and pinouts

- 48-pin TSOP

- 44-pin SO (availability TBD)

• Detection of program/erase cycle completion

- DQ7 DATA polling

- DQ6 toggle bit

- DQ2 toggle bit

- RY/BY output

• Erase suspend/resume

- Supports reading data from or programming data to

a sector not being erased

• Low V

write lock-out below 1.5V

• 10 year data retention at 150C

• 100,000 write/erase cycle endurance

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RY/BY

RESET

BYTE

Command

A-1

Program/erase

control

Program voltage

generator

Chip enable

Output enable

Logic

STB

Data latch

Sector protect/

erase voltage

switches

Erase voltage

generator

DQ0–DQ15

Input/output

buffers

detector

A0–A18

Timer

Address latch

STB

Y decoder

Y gating

X decoder

Cell matrix

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29LV800-70R

Maximum access time

Maximum chip enable access time

Maximum output enable access time

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29LV800-80

29LV800-90

29LV800-120

120

Unit

9/26/01; V.1.5

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The AS29LV800 is an 8 megabit, 3.0 volt Flash memory organized as 1 Megabyte of 8 bits/512Kbytes of 16 bits each. For

flexible erase and program capability, the 8 megabits of data is divided into nineteen sectors: one 16K, two 8K, one 32K, and

fifteen 64k byte sectors; or one 8K, two 4K, one 16K, and fifteen 32K word sectors. The ×8 data appears on DQ0–DQ7; the ×16

data appears on DQ0–DQ15. The AS29LV800 is offered in JEDEC standard 48-pin TSOP and 44-pin SO (availability TBD)

packages. This device is designed to be programmed and erased in-system with a single 3.0V V

supply. The device can also be

reprogrammed in standard EPROM programmers.

The AS29LV800 offers access times of 70/80/90/120 ns, allowing 0-wait state operation of high speed microprocessors. To

eliminate bus contention the device has separate chip enable (CE), write enable (WE), and output enable (OE) controls. Word

mode (×16 output) is selected by BYTE = high. Byte mode (×8 output) is selected by BYTE = low.

The AS29LV800 is fully compatible with the JEDEC single power supply Flash standard. Write commands are sent to the

command register using standard microprocessor write timings. An internal state-machine uses register contents to control the

erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase

operations. Read data from the device occurs in the same manner as other Flash or EPROM devices. Use the program command

sequence to invoke the automated on-chip programming algorithm that automatically times the program pulse widths and

verifies proper cell margin. Use the erase command sequence to invoke the automated on-chip erase algorithm that preprograms

the sector (if it is not already programmed before executing the erase operation), times the erase pulse widths, and verifies

proper cell margin.

Boot sector architecture enables the system to boot from either the top (AS29LV800T) or the bottom (AS29LV800B) sector.

Sector erase architecture allows specified sectors of memory to be erased and reprogrammed without altering data in other

sectors. A sector typically erases and verifies within 1.0 seconds. Hardware sector protection disables both program and erase

operations in all, or any combination of, the nineteen sectors. The device provides true background erase with Erase Suspend,

which puts erase operations on hold to either read data from, or program data to, a sector that is not being erased. The chip erase

command will automatically erase all unprotected sectors.

A factory shipped AS29LV800 is fully erased (all bits = 1). The programming operation sets bits to 0. Data is programmed into

the array one byte at a time in any sequence and across sector boundaries. A sector must be erased to change bits from 0 to 1.

Erase returns all bytes in a sector to the erased state (all bits = 1). Each sector is erased individually with no effect on other

sectors.

The device features single 3.0V power supply operation for Read, Write, and Erase functions. Internally generated and regulated

voltages are provided for the Program and Erase operations. A low V

detector automatically inhibits write operations during

power transtitions. The RY/BY pin, DATA polling of DQ7, or toggle bit (DQ6) may be used to detect end of program or erase

operations. The device automatically resets to the read mode after program/erase operations are completed. DQ2 indicates

which sectors are being erased.

The AS29LV800 resists accidental erasure or spurious programming signals resulting from power transitions. Control register

architecture permits alteration of memory contents only after successful completion of specific command sequences. During

power up, the device is set to read mode with all program/erase commands disabled when V

is less than V

LKO

(lockout

voltage). The command registers are not affected by noise pulses of less than 5 ns on OE, CE, or WE. To initiate write commands,

CE and WE must be logical zero and OE a logical 1.

When the device’s hardware RESET pin is driven low, any program/erase operation in progress is terminated and the internal

state machine is reset to read mode. If the RESET pin is tied to the system reset circuitry and a system reset occurs during an

automated on-chip program/erase algorithm, data in address locations being operated on may become corrupted and requires

rewriting. Resetting the device enables the system’s microprocessor to read boot-up firmware from the Flash memory.

The AS29LV800 uses Fowler-Nordheim tunnelling to electrically erase all bits within a sector simultaneously. Bytes are

programmed one at a time using EPROM programming mechanism of hot electron injection.

9/26/01; V.1.5

$OOLDQFH 6HPLFRQGXFWRU

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AS29LV800T-80SI相似产品对比

	AS29LV800T-80SI	AS29LV800B-70RSC	AS29LV800B-70RTI	AS29LV800B-80SC	AS29LV800B-90SC	AS29LV800T-120TC	AS29LV800T-70RSC	AS29LV800T-90SC	AS29LV800T-90TC	AS29LV800T-90TI
描述	Flash, 512KX16, 80ns, PDSO44, PLASTIC, MO-175AA, SO-44	Flash, 512KX16, 70ns, PDSO44, PLASTIC, MO-175AA, SO-44	Flash, 512KX16, 70ns, PDSO48, 12 X 20 MM, TSOP1-48	Flash, 512KX16, 80ns, PDSO44, PLASTIC, MO-175AA, SO-44	Flash, 512KX16, 90ns, PDSO44, PLASTIC, MO-175AA, SO-44	Flash, 512KX16, 120ns, PDSO48, 12 X 20 MM, TSOP1-48	Flash, 512KX16, 70ns, PDSO44, PLASTIC, MO-175AA, SO-44	Flash, 512KX16, 90ns, PDSO44, PLASTIC, MO-175AA, SO-44	Flash, 512KX16, 90ns, PDSO48, 12 X 20 MM, TSOP1-48	Flash, 512KX16, 90ns, PDSO48, 12 X 20 MM, TSOP1-48
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
厂商名称	ALSC [Alliance Semiconductor Corporation]	ALSC [Alliance Semiconductor Corporation]	ALSC [Alliance Semiconductor Corporation]	ALSC [Alliance Semiconductor Corporation]	ALSC [Alliance Semiconductor Corporation]	ALSC [Alliance Semiconductor Corporation]	ALSC [Alliance Semiconductor Corporation]	ALSC [Alliance Semiconductor Corporation]	ALSC [Alliance Semiconductor Corporation]	ALSC [Alliance Semiconductor Corporation]
零件包装代码	SOIC	SOIC	TSOP1	SOIC	SOIC	TSOP1	SOIC	SOIC	TSOP1	TSOP1
包装说明	SOP, SOP44,.63	PLASTIC, MO-175AA, SO-44	TSOP1, TSSOP48,.8,20	SOP, SOP44,.63	SOP, SOP44,.63	TSOP1, TSSOP48,.8,20	PLASTIC, MO-175AA, SO-44	SOP, SOP44,.63	TSOP1, TSSOP48,.8,20	TSOP1, TSSOP48,.8,20
针数	44	44	48	44	44	48	44	44	48	48
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最长访问时间	80 ns	70 ns	70 ns	80 ns	90 ns	120 ns	70 ns	90 ns	90 ns	90 ns
备用内存宽度	8	8	8	8	8	8	8	8	8	8
启动块	TOP	BOTTOM	BOTTOM	BOTTOM	BOTTOM	TOP	TOP	TOP	TOP	TOP
命令用户界面	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
数据轮询	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
耐久性	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles
JESD-30 代码	R-PDSO-G44	R-PDSO-G44	R-PDSO-G48	R-PDSO-G44	R-PDSO-G44	R-PDSO-G48	R-PDSO-G44	R-PDSO-G44	R-PDSO-G48	R-PDSO-G48
JESD-609代码	e0	e0	e0	e0	e0	e0	e0	e0	e0	e0
长度	28.2 mm	28.2 mm	18.4 mm	28.2 mm	28.2 mm	18.4 mm	28.2 mm	28.2 mm	18.4 mm	18.4 mm
内存密度	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit
内存集成电路类型	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH
内存宽度	16	16	16	16	16	16	16	16	16	16
功能数量	1	1	1	1	1	1	1	1	1	1
部门数/规模	1,2,1,15	1,2,1,15	1,2,1,15	1,2,1,15	1,2,1,15	1,2,1,15	1,2,1,15	1,2,1,15	1,2,1,15	1,2,1,15
端子数量	44	44	48	44	44	48	44	44	48	48
字数	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words
字数代码	512000	512000	512000	512000	512000	512000	512000	512000	512000	512000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	85 °C	70 °C	85 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	85 °C
组织	512KX16	512KX16	512KX16	512KX16	512KX16	512KX16	512KX16	512KX16	512KX16	512KX16
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	SOP	SOP	TSOP1	SOP	SOP	TSOP1	SOP	SOP	TSOP1	TSOP1
封装等效代码	SOP44,.63	SOP44,.63	TSSOP48,.8,20	SOP44,.63	SOP44,.63	TSSOP48,.8,20	SOP44,.63	SOP44,.63	TSSOP48,.8,20	TSSOP48,.8,20
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	240	NOT SPECIFIED	NOT SPECIFIED	240	NOT SPECIFIED	NOT SPECIFIED	240	240
电源	3/3.3 V	3.3 V	3.3 V	3/3.3 V	3/3.3 V	3/3.3 V	3.3 V	3/3.3 V	3/3.3 V	3/3.3 V
编程电压	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
就绪/忙碌	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
座面最大高度	3.1 mm	3.1 mm	1.2 mm	3.1 mm	3.1 mm	1.2 mm	3.1 mm	3.1 mm	1.2 mm	1.2 mm
部门规模	16K,8K,32K,64K	16K,8K,32K,64K	16K,8K,32K,64K	16K,8K,32K,64K	16K,8K,32K,64K	16K,8K,32K,64K	16K,8K,32K,64K	16K,8K,32K,64K	16K,8K,32K,64K	16K,8K,32K,64K
最大待机电流	0.000005 A	0.000005 A	0.000005 A	0.000005 A	0.000005 A	0.000005 A	0.000005 A	0.000005 A	0.000005 A	0.000005 A
最大压摆率	0.1 mA	0.1 mA	0.1 mA	0.1 mA	0.1 mA	0.1 mA	0.1 mA	0.1 mA	0.1 mA	0.1 mA
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	2.7 V	3 V	3 V	2.7 V	2.7 V	2.7 V	3 V	2.7 V	2.7 V	2.7 V
标称供电电压 (Vsup)	3 V	3.3 V	3.3 V	3 V	3 V	3 V	3.3 V	3 V	3 V	3 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子节距	1.27 mm	1.27 mm	0.5 mm	1.27 mm	1.27 mm	0.5 mm	1.27 mm	1.27 mm	0.5 mm	0.5 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
切换位	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
类型	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE
宽度	12.6 mm	12.6 mm	12 mm	12.6 mm	12.6 mm	12 mm	12.6 mm	12.6 mm	12 mm	12 mm

AS29LV800T-80SI

AS29LV800T-80SI概述

AS29LV800T-80SI规格参数

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AS29LV800T-80SI相似产品对比

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