RN1970HFE,RN1971HFE
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1970HFE,RN1971HFE
Switching, Inverter Circuit, Interface Circuit and Driver
Circuit Applications
•
•
Two devices are incorporated into an Extreme-Super-Mini (6 pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more compact
equipment and save assembly cost.
Complementary to RN2970HFE, RN2971HFE
Unit: mm
•
Equivalent Circuit
C
B
R1
E
JEDEC
JEITA
TOSHIBA
―
―
2−2N1A
Maximum Ratings
(Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
(Note)
T
j
T
stg
Rating
40
40
5
100
100
150
−55~150
Unit
V
V
V
mA
mW
°C
°C
Weight:0.003g (typ.)
Equivalent Circuit
(top view)
6
5
4
Q1
Q2
1
2
3
Note: Total rating
1
2004-03-02
RN1970HFE,RN1971HFE
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Input resistor
RN1970HFE
RN1971HFE
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
f
T
C
ob
R1
Test Condition
V
CB
=
40 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
5 V, I
C
=
1 mA
I
C
=
5 mA, I
B
=
0.25 mA
V
CE
=
10 V, I
C
=
5 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
⎯
Min
⎯
⎯
300
⎯
⎯
⎯
3.76
8
Typ.
⎯
⎯
⎯
0.06
250
3
4.7
10
Max
100
100
⎯
0.15
⎯
⎯
5.64
12
V
MHz
pF
kΩ
Unit
nA
nA
2
2004-03-02
RN1970HFE,RN1971HFE
Q1,Q2 Common
RN1970HFE
100
COLLECTOR CURRENT IC (mA)
IC - VI(ON)
10000
COLLECTOR CURRENT IC (µA)
RN1970HFE
IC - VI(OFF)
10
Ta=100°C
1000
Ta=100°C
25
-25
25
1
-25
EMITTER COMMON
VCE=5V
0.1
0.1
1
10
100
INPUT VOLTAGE VI(ON) (V)
100
EMITTER COMMON
VCE=5V
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
INPUT VOLTAGE VI(OFF) (V)
RN1971HFE
100
COLLECTOR CURRENT IC (mA)
IC - VI(ON)
10000
COLLECTOR CURRENT IC (µA)
RN1971HFE
IC - VI(OFF)
10
Ta=100°C
1000
25
1
-25
EMITTER COMMON
VCE=5V
0.1
0.1
1
10
100
INPUT VOLTAGE VI(ON) (V)
Ta=100°C
100
25
-25
EMITTER COMMON
VCE=5V
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
INPUT VOLTAGE VI(OFF) (V)
3
2004-03-02
RN1970HFE,RN1971HFE
Q1,Q2 Common
RN1970HFE
10000
hFE - IC
1000
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
RN1970HFE
VCE(sat) - IC
DC CURRENT GAIN hFE
Ta=100°C
1000
100
Ta=100°C
-25
100
25
10
-25
25
EMITTER COMMON
VCE=5V
10
0.1
1
10
100
COLLECTOR CURRENT IC (mA)
EMITTER COMMON
IC/IB=20
1
0.1
1
10
100
COLLECTOR CURRENT IC (mA)
RN1971HFE
10000
hFE - IC
1000
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
RN1971HFE
VCE(sat) - IC
DC CURRENT GAIN hFE
Ta=100°C
1000
100
Ta=100°C
-25
100
25
10
-25
25
EMITTER COMMON
IC/IB=20
EMITTER COMMON
VCE=5V
10
0.1
1
10
100
1
0.1
1
10
100
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
4
2004-03-02
RN1970HFE,RN1971HFE
Type Name
Marking
Type name
RN1970HFE
XX1
Type name
RN1971HFE
XX2
5
2004-03-02
能源基础设施
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