Datasheet> 器件分类 > 分立半导体> 晶体管> RN2962FE(TPL3)

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RN2962FE(TPL3): 产品描述PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR; 产品类别分立半导体晶体管; 文件大小575KB，共8页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

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RN2962FE(TPL3)概述

PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR

RN2962FE(TPL3)规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Toshiba(东芝)
包装说明	,
Reach Compliance Code	unknown
最大集电极电流 (IC)	0.1 A
最小直流电流增益 (hFE)	50
元件数量	2
极性/信道类型	PNP
最大功率耗散 (Abs)	0.1 W
表面贴装	YES
晶体管元件材料	SILICON

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RN2961FE~RN2966FE

TOSHIBA Transistor

Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)

RN2961FE,RN2962FE,RN2963FE

RN2964FE,RN2965FE,RN2966FE

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

•

Two devices are incorporated into an Extreme-Super-Mini (6-pin)

package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enables the manufacture of ever more

compact equipment and lowers assembly cost.

•

Complementary to RN1961FE~RN1966FE

Unit: mm

Equivalent Circuit and Bias Resistor Values

Type No.

RN2961FE

RN2962FE

RN2963FE

RN2964FE

RN2965FE

RN2966FE

R1 (kΩ)

4.7

2.2

4.7

R2 (kΩ)

4.7

JEDEC

JEITA

TOSHIBA

―

2-2N1A

Weight: 0.003 g (typ.)

Absolute Maximum Ratings

(Ta = 25°C) (Q1, Q2 common)

Characteristics

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN2961FE~2966FE

RN2961FE~2964FE

RN2965FE, 2966FE

Symbol

CBO

CEO

EBO

(Note 1)

stg

Rating

−50

−10

−5

−100

100

150

−55~150

Unit

°C

Equivalent Circuit

(top view)

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

2007-11-01

RN2962FE(TPL3)相似产品对比

	RN2962FE(TPL3)	RN2964FE(TPL3,F)	RN2964FE(TE85L)	RN2964FE(TPL3)	RN2965FE(TE85L)	RN2961FE(TE85L)	RN2963FE(TE85L)	RN2963FE(TPL3,F)	RN2966FE(TPL3,F)
描述	PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR	RN2964FE(TE85L)	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR	RN2965FE(TE85L)	RN2961FE(TE85L)	RN2963FE(TE85L)	PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR	PRE-BIASED \"DIGITAL\" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
是否Rohs认证	不符合	符合	-	不符合	-	-	-	符合	符合
厂商名称	Toshiba(东芝)	-	-	-	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)
最大集电极电流 (IC)	0.1 A	0.1 A	-	0.1 A	-	-	-	0.1 A	0.1 A
最小直流电流增益 (hFE)	50	80	-	80	-	-	-	70	80
元件数量	2	2	-	2	-	-	-	2	2
极性/信道类型	PNP	PNP	-	PNP	-	-	-	PNP	PNP
最大功率耗散 (Abs)	0.1 W	0.1 W	-	0.1 W	-	-	-	0.1 W	0.1 W
表面贴装	YES	YES	-	YES	-	-	-	YES	YES
晶体管元件材料	SILICON	SILICON	-	SILICON	-	-	-	SILICON	SILICON

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