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NE960R575-A

产品描述RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, CERAMIC, 75, 2 PIN
产品类别分立半导体    晶体管   
文件大小87KB,共8页
制造商NEC(日电)
标准
下载文档 详细参数 选型对比 全文预览

NE960R575-A概述

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, CERAMIC, 75, 2 PIN

NE960R575-A规格参数

参数名称属性值
是否Rohs认证符合
厂商名称NEC(日电)
包装说明HERMETIC SEALED, CERAMIC, 75, 2 PIN
Reach Compliance Codecompliant
外壳连接SOURCE
配置SINGLE
最小漏源击穿电压9 V
最大漏极电流 (ID)0.7 A
FET 技术METAL SEMICONDUCTOR
最高频带KU BAND
JESD-30 代码R-CDFM-F2
湿度敏感等级1
元件数量1
端子数量2
工作模式DEPLETION MODE
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)260
极性/信道类型N-CHANNEL
认证状态Not Qualified
表面贴装YES
端子形式FLAT
端子位置DUAL
处于峰值回流温度下的最长时间10
晶体管应用AMPLIFIER
晶体管元件材料GALLIUM ARSENIDE

文档预览

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DATA SHEET
N-CHANNEL GaAs MES FET
NE960R5 SERIES
0.5 W X, Ku-BAND POWER GaAs MES FET
DESCRIPTION
The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transmitter applications for X, Ku-
band microwave communication systems. It is capable of delivering 0.5 watt of output power (CW) with high linear
gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band amplifiers etc. The
NE960R500 is available in chip form. The NE960R500 has a via hole source grounding and PHS (Plated Heat Sink)
for superior RF performance. The NE960R575 is available in a hermetically sealed ceramic package. Reliability and
performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
• High Output Power
• High Linear Gain
: P
o (1 dB)
= +27.5 dBm TYP.
: 9.0 dB TYP.
• High Power Added Efficiency : 30 % TYP. @V
DS
= 9 V, I
Dset
= 180 mA, f = 14.5 GHz
ORDERING INFORMATION
Part Number
NE960R500
NE960R575
Package
00 (CHIP)
75
Supplying Form
ESD protective envelope
Remark
To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE960R500, NE960R575
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PG10026EJ02V0DS (2nd edition)
Date Published August 2003 CP(K)
Printed in Japan
The mark
shows major revised points.
NEC Compound Semiconductor Devices 1999, 2003

NE960R575-A相似产品对比

NE960R575-A NE960R500-A NE960R500 NE960R575
描述 RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, CERAMIC, 75, 2 PIN RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE-3 RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE-3 RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, CERAMIC, 75, 2 PIN
是否Rohs认证 符合 符合 不符合 不符合
包装说明 HERMETIC SEALED, CERAMIC, 75, 2 PIN DIE-3 DIE-3 HERMETIC SEALED, CERAMIC, 75, 2 PIN
Reach Compliance Code compliant compliant compliant compliant
配置 SINGLE SINGLE SINGLE SINGLE
最小漏源击穿电压 9 V 9 V 9 V 9 V
最大漏极电流 (ID) 0.7 A 0.7 A 0.7 A 0.7 A
FET 技术 METAL SEMICONDUCTOR METAL SEMICONDUCTOR METAL SEMICONDUCTOR METAL SEMICONDUCTOR
最高频带 KU BAND KU BAND KU BAND KU BAND
JESD-30 代码 R-CDFM-F2 R-XUUC-N3 R-XUUC-N3 R-CDFM-F2
元件数量 1 1 1 1
端子数量 2 3 3 2
工作模式 DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE
封装主体材料 CERAMIC, METAL-SEALED COFIRED UNSPECIFIED UNSPECIFIED CERAMIC, METAL-SEALED COFIRED
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT UNCASED CHIP UNCASED CHIP FLANGE MOUNT
峰值回流温度(摄氏度) 260 260 NOT SPECIFIED NOT SPECIFIED
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES
端子形式 FLAT NO LEAD NO LEAD FLAT
端子位置 DUAL UPPER UPPER DUAL
处于峰值回流温度下的最长时间 10 10 NOT SPECIFIED NOT SPECIFIED
晶体管应用 AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
晶体管元件材料 GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE GALLIUM ARSENIDE
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