NEC's NPN SILICON HIGH
FREQUENCY TRANSISTOR
NE696M01
FEATURES
•
•
•
•
•
HIGH f
T
:
14 GHz TYP at 3 V, 10 mA
LOW NOISE FIGURE:
NF = 1.6 dB TYP at 2 GHz
HIGH GAIN:
|S
21E
|
2
= 14 dB TYP at 2 GHz
6 PIN SMALL MINI MOLD PACKAGE
EXCELLENT LOW VOLTAGE, LOW CURRENT
PERFORMANCE
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M01
TOP VIEW
2.1
±
0.1
1.25
±
0.1
0.65
2.0
±
0.2
1.3
1
6
0.2 (All Leads)
5
T95
SIDE VIEW
2
3
4
DESCRIPTION
NEC's NE696M01 is an NPN high frequency silicon epitaxial
transistor (NE685) encapsulated in an ultra small 6 pin SOT-
363 package. Its four emitter pins decrease emitter inductance
resulting in 3 dB more gain compared to conventional SOT-23
and SOT-143 devices. The NE696M01 is ideal for LNA and
pre-driver applications up to 2.4 GHz where low cost, high gain,
low voltage and low current are prime considerations.
0.9
±
0.1
0.7
0.15
- 0.05
0 ~ 0.1
+0.10
PIN OUT
1. Emitter
2. Emitter
3. Base
4. Emitter
5. Emitter
6. Collector
Note:
Pin 3 is identified with a circle on the bottom of the package.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CBO
I
EBO
h
FE1
f
T
Cre
2
|S
21E
|
2
NF
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Forward Current Gain at V
CE
= 3 V, I
C
= 10 mA
Gain Bandwidth at V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
Feedback Capacitance at V
CB
= 3 V, I
E
= 0, f = 1 MHz
Insertion Power Gain at V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
Noise Figure at V
CE
= 3 V, I
C
= 3 mA, f = 2 GHz
GHz
pF
dB
dB
UNITS
µA
µA
80
120
14
0.15
14
1.6
MIN
NE696M01
M01
TYP
MAX
0.1
0.1
160
Notes:
1. Pulsed measurement, pulse width
≤
350
µs,
duty cycle
≤
2 %.
2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
3. For Tape and Reel version use part number NE696M01-T1, 3K per reel.
California Eastern Laboratories
NE696M01
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
P
T
T
J
T
STG
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
UNITS
V
V
V
mA
mW
°C
°C
RATINGS
9
6
2
30
150
150
-65 to +150
NE696M01
TYPICAL NOISE PARAMETERS
(T
A
= 25˚C)
FREQ.
(GHz)
NF
OPT
(dB)
G
A
(dB)
Γ
OPT
MAG
ANG
Rn/50
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
ORDERING INFORMATION
PART NUMBER
NE696M01-T1
QUANTITY
3000
PACKAGING
Tape & Reel
V
CE =
1 V
,
I
C =
3 mA
1.0
1.4
1.4
1.46
1.7
1.55
2.0
1.8
3.0
2.3
V
CE =
2 V
,
I
C =
1 mA
0.5
.94
0.8
1.1
1.0
1.25
1.5
1.55
2.0
1.94
3.0
2.65
V
CE =
2 V
,
I
C =
5 mA
0.5
1.2
0.8
1.32
1.0
1.47
1.5
1.63
2.0
1.82
3.0
2.17
V
CE =
3 V
,
I
C =
5 mA
0.5
0.8
1.0
1.5
2.0
3.0
1.25
1.35
1.41
1.58
1.81
2.29
18.5
16.4
15.2
14.5
11.0
16.8
14.8
13.8
11.4
9.6
7.0
23.0
20.3
18.8
15.8
13.0
9.8
24.2
20.7
18.8
15.2
13.7
12.0
0.53
0.47
0.43
0.39
0.3
0.72
0.66
0.63
0.56
0.5
0.46
0.49
0.44
0.42
0.39
0.33
0.25
0.5
0.45
0.44
0.41
0.34
0.29
79
95
111
132
177
41
65
79
104
138
-173
37
62
76
98
126
173
37
62
78
97
126
164
0.27
0.13
0.19
0.16
0.10
0.52
0.44
0.39
0.31
0.17
0.07
0.38
0.27
0.30
0.23
0.18
0.10
0.39
0.26
0.29
0.24
0.20
0.09
TYPICAL PERFORMANCE CURVES
(T
A
= 25˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
50
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 2 V
Total Power Dissipation, P
T
(mW)
Collector Current, I
C
(mA)
40
30
100
20
10
0
0
50
100
150
0
0.5
1.0
Ambient Temperature, T
A
(˚C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
Base to Emitter Voltage, V
BE
(V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
Collector Current, I
C
(mA)
DC Current Gain, hFE
20
200
µA
180
µA
160
µA
140
µA
120
µA
100
µA
80
µA
60
µA
5
40
µA
I
B
= 20
µA
0
200
V
CE
= 2 V
100
15
50
V
CE
= 1 V
10
20
10
Collector to Emitter Voltage, V
CE
(V)
1.0
2.0
3.0
1
2
5
10
20
50
100
Collector Current, I
C
(mA)
NE696M01
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
30.0m
DC CURRENT GAIN vs.
COLLECTOR CURRENT
150.0
Collector Current, I
C
(mA)
DC Current Gain, h
FE
(mA)
IC
HFE
2.00m
/div
10.0
/div
0.00
0.00
VCE (V)
500m /div
6.00
50.0
0.00
IC (A)
2.00m /div
30.0m
Collector to Emitter Voltage, V
CE
(V)
Collector Current, I
C
(mA)
TYPICAL SCATTERING PARAMETERS
(T
A
= 25°C)
NE696M01
V
CE
= 1 V, I
C
= 5 mA
FREQUENCY
(GHz)
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.20
1.40
1.60
1.80
2.00
2.25
2.50
2.75
3.00
3.50
4.00
4.50
5.00
5.50
6.00
6.50
7.00
7.50
Note:
1. Gain Calculation:
MAG =
|S
21
|
|S
12
|
S
11
MAG
0.728
0.684
0.639
0.594
0.556
0.522
0.492
0.442
0.406
0.380
0.362
0.353
0.351
0.360
0.377
0.397
0.451
0.498
0.538
0.567
0.587
0.608
0.630
0.657
0.690
ANG
-52.30
-64.20
-73.80
-83.40
-92.50
-100.70
-108.50
-123.40
-137.30
-150.60
-164.30
-176.70
167.30
152.60
138.80
127.30
107.70
93.20
82.30
74.10
67.30
61.10
55.20
49.10
42.90
MAG
10.962
10.349
9.557
8.885
8.236
7.644
7.116
6.242
5.522
4.931
4.452
4.047
3.606
3.248
2.942
2.676
2.251
1.930
1.690
1.509
1.361
1.229
1.091
0.949
0.818
S
21
ANG
136.50
128.40
121.20
114.50
108.30
102.80
97.80
88.70
80.40
73.00
65.90
59.30
51.40
43.80
36.40
29.70
16.40
4.10
-7.90
-19.70
-31.50
-43.20
-54.40
-63.80
-70.40
MAG
0.040
0.046
0.052
0.056
0.059
0.062
0.063
0.067
0.069
0.070
0.072
0.074
0.075
0.077
0.079
0.081
0.085
0.092
0.101
0.113
0.127
0.141
0.155
0.164
0.171
S
12
ANG
56.00
51.30
46.70
42.10
38.80
35.70
33.80
29.60
26.80
24.40
22.70
21.90
20.20
20.20
19.30
18.50
18.50
17.50
16.20
13.60
9.40
4.00
-1.40
-6.40
-9.20
MAG
0.832
0.779
0.732
0.687
0.647
0.615
0.587
0.542
0.509
0.485
0.469
0.459
0.451
0.449
0.453
0.458
0.477
0.496
0.513
0.532
0.555
0.593
0.637
0.678
0.719
S
22
ANG
-32.90
-39.10
-44.00
-48.50
-52.30
-55.70
-58.60
-64.10
-69.10
-73.40
-77.90
-81.80
-86.70
-91.40
-96.10
-100.50
-108.90
-118.00
-128.80
-142.40
-158.60
-175.70
168.60
157.90
154.80
K
MAG
1
(dB)
24.378
23.521
22.643
22.005
21.449
20.909
20.529
19.692
19.032
18.478
16.304
15.018
13.695
12.702
11.872
11.110
9.936
8.980
8.216
7.622
7.107
6.870
6.778
7.057
6.798
0.303
0.338
0.398
0.463
0.522
0.579
0.640
0.748
0.860
0.976
1.069
1.151
1.270
1.353
1.417
1.475
1.530
1.515
1.460
1.371
1.283
1.175
1.077
1.009
0.911
(
K
±
K
2
- 1
).
When K
≤
1, MAG is undefined and MSG values are used. MSG =
2
2
2
|S
21
|
, K = 1 + |
∆
| - |S
11
| - |S
22
|
,
∆
= S
11
S
22
- S
21
S
12
|S
12
|
2 |S
12
S
21
|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
NE696M01
TYPICAL SCATTERING PARAMETERS
(T
A
= 25°C)
0.8
0.6
0.4
3
4
0.2
5
10
20
50
10 20 -50
-20
-10
1
1.5
2
90˚
S
21
135˚
45˚
S
12
180˚
5.00
0.05
0.10 0.15
0˚
0.2
0.4
0.6
0.8 1
1.5
2
3
4 5
-0.2
S
11
S
22
-5
-4
-3
-0.4
-2
-0.6
-1.5
-0.8
-1
Coordinates in Ohms
Frequency in GH
z
V
CE
=
2 V, I
C
= 10 mA
10.00
225˚
15.00
270˚
315˚
NE696M01
V
CE
= 2 V, I
C
= 1 mA
FREQUENCY
GHz
0.40
0.80
1.00
2.00
2.50
3.00
4.00
5.00
6.00
S
11
MAG
0.941
0.874
0.833
0.610
0.536
0.502
0.550
0.617
0.660
ANG
-25.2
-49.7
-61.1
-119.1
-150.6
176.8
123.5
93.4
74.9
MAG
2.924
2.776
2.642
2.104
1.808
1.551
1.121
0.852
0.665
S
21
ANG
154.2
132.3
122.1
75.2
54.7
36.1
4.0
-22.3
-45.6
MAG
0.037
0.066
0.077
0.097
0.090
0.077
0.053
0.071
0.116
S
12
ANG
67.9
51.3
43.1
9.5
-2.7
-10.4
-0.2
25.0
21.5
MAG
0.977
0.930
0.904
0.798
0.765
0.755
0.769
0.789
0.821
S
22
ANG
-16.3
-31.3
-37.9
-66.0
-77.3
-87.4
-107.1
-133.7
-169.3
K
0.181
0.255
0.315
0.662
0.919
1.238
2.016
1.607
1.048
MAG
1
(dB)
18.978
16.239
15.354
13.363
13.030
10.100
7.495
6.222
6.238
V
CE
= 2 V, I
C
= 5 mA
0.40
0.80
1.00
2.00
2.50
3.00
4.00
5.00
6.00
Note:
1. Gain Calculation:
MAG =
|S
21
|
|S
12
|
0.753
0.583
0.513
0.338
0.333
0.366
0.468
0.543
0.591
-46.2
-83.4
-98.3
-165.4
161.7
134.1
97.3
77.4
64.3
11.297
8.809
7.704
4.496
3.634
3.005
2.169
1.697
1.381
139.6
111.9
101.4
61.9
46.0
31.6
5.4
-19.0
-43.2
0.030
0.047
0.051
0.059
0.062
0.066
0.081
0.107
0.141
59.6
43.1
37.7
27.5
27.6
27.8
29.4
25.2
14.8
0.871
0.715
0.660
0.541
0.530
0.538
0.575
0.610
0.666
-27.0
-43.8
-49.4
-70.7
-80.0
-89.2
-107.7
-132.7
-167.0
0.296
0.509
0.628
1.163
1.357
1.460
1.386
1.152
0.921
25.758
22.728
21.791
16.374
14.112
12.563
10.575
9.638
9.910
(
K
±
K
2
- 1
).
When K
≤
1, MAG is undefined and MSG values are used. MSG =
2
2
2
|S
21
|
, K = 1 + |
∆
| - |S
11
| - |S
22
|
,
∆
= S
11
S
22
- S
21
S
12
|S
12
|
2 |S
12
S
21
|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
NE696M01
TYPICAL SCATTERING PARAMETERS
(T
A
= 25°C)
NE696M01
V
CE
= 3 V, I
C
= 5 mA
FREQUENCY
(GHz)
0.40
0.80
1.00
2.00
2.50
3.00
4.00
5.00
6.00
Note:
1. Gain Calculation:
MAG =
|S
21
|
|S
12
|
S
11
MAG
0.765
0.596
0.525
0.335
0.323
0.353
0.456
0.533
0.583
ANG
-43.9
-79.7
-94.2
-160.2
166.2
137.5
99.2
78.9
65.7
MAG
11.370
8.988
7.898
4.669
3.781
3.134
2.266
1.773
1.442
S
21
ANG
140.8
113.4
102.7
63.0
47.0
32.4
5.9
-18.6
-43.1
MAG
0.028
0.043
0.046
0.054
0.057
0.062
0.078
0.106
0.142
S
12
ANG
60.3
44.4
39.6
30.6
30.6
31.8
34.1
29.7
18.5
MAG
0.885
0.739
0.687
0.573
0.562
0.570
0.606
0.642
0.695
S
22
ANG
-25.1
-41.1
-46.5
-67.5
-76.6
-85.9
-104.5
-129.8
-164.2
K
MAG
1
(dB)
26.086
23.202
22.348
16.952
14.673
13.178
11.285
10.827
10.067
0.299
0.506
0.627
1.159
1.352
1.422
1.312
1.053
0.823
(
K
±
K
2
- 1
).
When K
≤
1, MAG is undefined and MSG values are used. MSG =
2
2
2
|S
21
|
, K = 1 + |
∆
| - |S
11
| - |S
22
|
,
∆
= S
11
S
22
- S
21
S
12
|S
12
|
2 |S
12
S
21
|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
