2N2323—2N2329
Silicon Controlled Rectifier
Rev. V4
Features
•
Available in JAN, JANTX, JANTXV per MIL-PRF-
19500/276
•
TO-5 & TO-39 (TO-205AD) Package
Electrical Characteristics
Characteristics
Subgroup 2 Testing
R
2
= 1 kΩ
R
2
= 2 kΩ
V
R
= 50 Vdc
V
R
= 100 Vdc
V
R
= 200 Vdc
V
R
= 300 Vdc
V
R
= 400 Vdc
R
2
= 1 kΩ
R
2
= 2 kΩ
V
R
= 50 Vdc
V
R
= 100 Vdc
V
R
= 200 Vdc
V
R
= 300 Vdc
V
R
= 400 Vdc
2N2323, S
-
2N2329, S
2N2323A, AS
-
2N2329A, AS
2N2323, S, A, AS
2N2324, S, A, AS
2N2326, S, A, AS
2N2328, S, A, AS
2N2329, S, A, AS
2N2323, S
-
2N2329, S
2N2323A, AS
-
2N2329A, AS
2N2323, S, A, AS
2N2324, S, A, AS
2N2326, S, A, AS
2N2328, S, A, AS
2N2329, S, A, AS
Symbol
Min.
Max.
Units
Reverse Blocking Current
I
RBX
1
—
10
µAdc
Forward Blocking Current
I
FBX
1
—
10
µAdc
Reverse Gate Current
(V
KG
= 6 Vdc)
Gate Trigger Voltage & Current
V
2
= V
FBX
= 6 Vdc; R
L
= 100 W
Subgroup 4 Testing
dv/dt = 1.8 v/µs, R
3
= 1 kΩ
dv/dt = 0.7 v/ms, R
3
= 2 kW
V
R
= 50 Vdc
V = 100 Vdc
50
Ω
≤ R
L
≤ 400 W, C = 0.1 to 1.0 µF,
R
V
R
= 200 Vdc
repetition rate = 60 pps,
V
R
= 300 Vdc
test duration = 15 seconds
V
R
= 400 Vdc
Exponential Rate of Voltage Rise
T
A
= 125°C
Forward “on” Voltage
I
FM
= 4a (pk) (pulse), pulse width =
8.5 ms, max; duty cycle = 2% max.
Holding Current
V
AA
= 24 Vdc max., I
F
1 = 100 mAdc,
R
3
= 1 kΩ
I
F
2 = 10 mAdc
R
3
= 2 kΩ
Gate trigger source voltage = 6 Vdc,
trigger pulse width = 25 µs min.
R
2
= 330
Ω
1
2N2323, S
-
2N2329, S
2N2323A, AS
-
2N2329A, AS
2N2323, S
-
2N2329, S
2N2323A, AS
-
2N2329A, AS
2N2323, S, A, AS
2N2324, S, A, AS
2N2326, S, A, AS
2N2328, S, A, AS
2N2329, S, A, AS
R
e
= 1 kΩ
R
e
= 2 kΩ
2N2323, S
-
2N2329, S
2N2323A, AS
-
2N2329A, AS
I
kg
V
GT
1
I
GT
1
V
GT
1
I
GT
1
—
0.35
—
0.35
—
200
0.80
200
0.60
20
µAdc
Vdc
µAdc
Vdc
µAdc
V
FBX
47
95
190
285
380
—
—
Vdc
V
FM
2.2
V(pk)
I
HOX
—
2
mAdc
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Visit
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for additional data sheets and product information.
For further information and support please visit:
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2N2323—2N2329
Silicon Controlled Rectifier
Rev. V4
Absolute Maximum Ratings
Ratings
Reverse Voltage
Working Peak Reverse Voltage
Forward Blocking Voltage
Average Forward Current
1
Forward Current Surge Peak
2
Cathode-Gate Current
Operating Temperature
Storage Junction Temperature
Symbol
V
RM
V
RM
V
FBXM
I
O
I
FSM
V
KGM
T
OP
T
STG
2N2323, S/
2N2323A, S
50
75
50
3,4
2N2324, S/
2N2324A, S
100
150
100
3,4
2N2326, S/
2N2326A, S
200
300
200
3,4
0.22
15
6
-65
to +125
-65
to +150
2N2328, S/
2N2328A, S
300
400
300
3,4
2N2329, S/
2N2329A, S
400
500
400
3,4
Unit
Vdc
Vpk
Vpk
Adc
Adc
Vpk
°C
°C
1. This average forward current is for an ambient temperature of 80°C and 180 electrical degrees of conduction.
2. Surge current is non-recurrent. The rate of rise of peak surge current shall not exceed 40 A during the first 5 µs after switching from the
‘off’ (blocking) to the ‘on’ (conducting) state. This is measured from the point where the thyristor voltage has decayed to 90% of its initial
blocking value.
3. Gate connected to cathode through 1,000 ohm resistor.
4. Gate connected to cathode through 2,000 ohm resistor.
2
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
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2N2323—2N2329
Silicon Controlled Rectifier
Rev. V4
Outline Drawing (TO-5 & TO-39)
Dimensions
LTR
MIN
CD
CH
HD
LC
LD
LL
LU
L1
L2
P
Q
TL
TW
r
0.016
—
0.250
0.100
—
0.029
0.028
—
0.019
0.050
—
—
0.050
0.045
0.034
0.010
45° TP
0.041
—
6.35
2.54
—
0.74
0.71
—
0.048
1.27
—
—
1.27
1.14
0.86
0.25
45° TP
0.305
0.240
0.335
Inches
MAX
0.335
0.260
0.370
Millimeters
MIN
7.75
6.10
8.51
MAX
8.51
6.60
9.40
—
—
—
7
8, 9
8,11,14
8, 9
8, 9
8, 9
7
5
—
—
10
7
Note
0.200 TP
0.016
0.021
5.08 TP
0.041
0.053
1, 2, 10, 12, 13, 14
1.
2.
3.
4.
5.
6.
7.
Dimensions are in inches.
Millimeters are given for general information only.
Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm).
Dimension TL measured from maximum HD.
Body contour optional within zone defined by HD, CD, and Q.
CD shall not vary more than 0.010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
Leads at gauge plane 0.054 +0.001 –0.000 inch (1.37 +0.03
-0.00
mm) below seating plane shall be within 0.007 inch (0.18 mm) radius of
true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods or by
gauging procedure.
8. Dimension LU applies between L, and L,. Dimension LD applies between L, and LL minimum. Diameter is uncontrolled in and beyond LL
minimum.
9. All three leads.
10. The collector shall be internally connected to the case.
11. Dimension r (radius) applies to both inside corners of tab.
12. In accordance with ASME Y14.5M, diameters are equivalent to
Фx
symbology.
13. Lead 1 = cathode, lead 2 = gate, lead 3 = anode. The anode shall be internally connected to the case.
14. For non-S-suffix devices (T0-5), dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max. For S-suffix types (T0-39),
dimension LL = 0.5 inch (12.70 mm) min. and 750 inch (19.05 mm) max.
3
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
www.vptcomponents.com
2N2323—2N2329
Silicon Controlled Rectifier
Rev. V4
VPT Components All rights reserved.
Information in this document is provided in connection with VPT Components’ products. These materials are
provided by VPT Components as a service to its customers and may be used for informational purposes only.
Except as provided in VPT Components’ Terms and Conditions of Sale for such products or in any separate
agreement related to this document, VPT Components assumes no liability whatsoever. VPT Components as-
sumes no responsibility for errors or omissions in these materials. VPT Components may make changes to
specifications and product descriptions at any time, without notice. VPT Components makes no commitment to
update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from
future changes to its specifications and product descriptions. No license, express or implied, by estoppels or oth-
erwise, to any intellectual property rights is granted by this document.
THESE MATERIALS ARE PROVIDED "AS IS" WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR
IMPLIED, RELATING TO SALE AND/OR USE OF VPT COMPONENTS’ PRODUCTS INCLUDING LIABILITY
OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, CONSEQUENTIAL OR
INCIDENTAL DAMAGES, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR
OTHER INTELLECTUAL PROPERTY RIGHT. VPT COMPONENTS FURTHER DOES NOT WARRANT THE
ACCURACY OR COMPLETENESS OF THE INFORMATION, TEXT, GRAPHICS OR OTHER ITEMS CON-
TAINED WITHIN THESE MATERIALS. VPT COMPONENTS SHALL NOT BE LIABLE FOR ANY SPECIAL, IN-
DIRECT, INCIDENTAL, OR CONSEQUENTIAL DAMAGES, INCLUDING WITHOUT LIMITATION, LOST REVE-
NUES OR LOST PROFITS, WHICH MAY RESULT FROM THE USE OF THESE MATERIALS.
VPT Components’ products are not intended for use in medical, lifesaving or life sustaining applications. VPT
Components’ customers using or selling VPT Components’ products for use in such applications do so at their
own risk and agree to fully indemnify VPT Components for any damages resulting from such improper use or
sale.
4
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.vptcomponents.com
for additional data sheets and product information.
For further information and support please visit:
www.vptcomponents.com
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