DTA124EE: 产品描述PNP Bipolar Digital Transistor; Polarity: PNP; V(BR)CEO Min (V): 50V; IC Continuous (mA): 30mA; GI: 56; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 22K Ohm; R2 (KΩ): 22K Ohm; R1/R2 Typ: 1; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 150mW; Package: SOT-523; 产品类别分立半导体晶体管; 文件大小199KB，共3页; 制造商Galaxy Microelectronics

下载文档详细参数选型对比全文预览

DTA124EE概述

PNP Bipolar Digital Transistor; Polarity: PNP; V(BR)CEO Min (V): 50V; IC Continuous (mA): 30mA; GI: 56; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 22K Ohm; R2 (KΩ): 22K Ohm; R1/R2 Typ: 1; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 150mW; Package: SOT-523

DTA124EE规格参数

参数名称	属性值
厂商名称	Galaxy Microelectronics
Reach Compliance Code	unknown
其他特性	BUILT IN BIAS RESISTANCE RATIO IS 1
最大集电极电流 (IC)	0.1 A
集电极-发射极最大电压	50 V
配置	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	56
JESD-30 代码	R-PDSO-G3
元件数量	1
端子数量	3
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	PNP
表面贴装	YES
端子形式	GULL WING
端子位置	DUAL
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	250 MHz
类别
极性	PNP
V(BR)CEO (V) min.	50
IC Continuous (mA)	30
Gi	56
VO(ON) (V)	0.3
fT MHz	250(typ)
R1 (kΩ)	22
R2 (kΩ)	22
R1/R2 typ	1
Vi(off) (V) max.	0.5
Vi(on) (V) min.	3
PD (mW)	150
AEC Qualified	No
最高工作温度	150
最低工作温度	-55
MSL等级	1
是否无铅	Yes
符合Reach	Yes
符合RoHS	Yes
ECCN代码	EAR99
Package Outlines	SOT-523

文档预览

下载PDF文档

全文
预览

Production specification

Digital Transistor

FEATURES



Epitaxial planar die construction.

Complementary NPN types available(DTC).

Built-in biasing resistors,R

Also available in lead free version.

DTA(R

SERIES)E

Lead-free

APPLICATIONS



The PNP style digital transistor.

SOT-523

ORDERING INFORMATION

Type No.

DTA114EE

DTA124EE

DTA143EE

DTA144EE

Marking

Package Code

SOT-523

MAXIMUM RATING

@ Ta=25℃ unless otherwise specified

Symbol

Parameter

Supply Voltage

Input Voltage

DTA114EE

DTA124EE

DTA143EE

DTA144EE

DTA114EE

DTA124EE

DTA143EE

DTA144EE

ALL

Value

-50

+10 to -40

+10 to -30

+10 to -40

-50

-30

-100

-30

-100

150

833

-55 to +150

Units

Output Current

(Max.)

θJA

stg

Output current

Power Dissipation

℃/W

℃

Thermal Resistance, Junction to Ambient Air

Operating and Storage and Temperature Range

H021

Rev.A

www.gmesemi.com

DTA124EE相似产品对比

	DTA124EE	DTA114EE	DTA143EE	DTA144EE
描述	PNP Bipolar Digital Transistor; Polarity: PNP; V(BR)CEO Min (V): 50V; IC Continuous (mA): 30mA; GI: 56; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 22K Ohm; R2 (KΩ): 22K Ohm; R1/R2 Typ: 1; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 150mW; Package: SOT-523	PNP Bipolar Digital Transistor; Polarity: PNP; V(BR)CEO Min (V): 50V; IC Continuous (mA): 50mA; GI: 30; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 10K Ohm; R2 (KΩ): 10K Ohm; R1/R2 Typ: 1; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 150mW; Package: SOT-523	PNP Bipolar Digital Transistor; Polarity: PNP; V(BR)CEO Min (V): 50V; IC Continuous (mA): 100mA; GI: 20; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 4.7K Ohm; R2 (KΩ): 4.7K Ohm; R1/R2 Typ: 1; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 150mW; Package: SOT-523	50V,30mA,PNP Bipolar Digital Transistor, 二极管, PNP, 50V, 30mA, 68, 0.3V, 250(typ)
厂商名称	Galaxy Microelectronics	Galaxy Microelectronics	Galaxy Microelectronics	Galaxy Microelectronics
Reach Compliance Code	unknown	unknown	unknown	unknown
其他特性	BUILT IN BIAS RESISTANCE RATIO IS 1	BUILT IN BIAS RESISTANCE RATIO IS 1	BUILT IN BIAS RESISTANCE RATIO IS 1	BUILT IN BIAS RESISTANCE RATIO IS 1
最大集电极电流 (IC)	0.1 A	0.1 A	0.1 A	0.1 A
集电极-发射极最大电压	50 V	50 V	50 V	50 V
配置	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	56	30	20	68
JESD-30 代码	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
元件数量	1	1	1	1
端子数量	3	3	3	3
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	PNP	PNP	PNP	PNP
表面贴装	YES	YES	YES	YES
端子形式	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	DUAL	DUAL	DUAL	DUAL
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	250 MHz	250 MHz	250 MHz	250 MHz
极性	PNP	PNP	PNP	PNP
V(BR)CEO (V) min.	50	50	50	50
IC Continuous (mA)	30	50	100	30
Gi	56	30	20	68
VO(ON) (V)	0.3	0.3	0.3	0.3
fT MHz	250(typ)	250(typ)	250(typ)	250(typ)
R1 (kΩ)	22	10	4.7	47
R2 (kΩ)	22	10	4.7	47
R1/R2 typ	1	1	1	1
Vi(off) (V) max.	0.5	0.5	0.5	0.5
Vi(on) (V) min.	3	3	3	3
PD (mW)	150	150	150	150
AEC Qualified	No	No	No	No
最高工作温度	150	150	150	150
最低工作温度	-55	-55	-55	-55
MSL等级	1	1	1	1
是否无铅	Yes	Yes	Yes	Yes
符合Reach	Yes	Yes	Yes	Yes
符合RoHS	Yes	Yes	Yes	Yes
ECCN代码	EAR99	EAR99	EAR99	EAR99
Package Outlines	SOT-523	SOT-523	SOT-523	SOT-523

DTA124EE

DTA124EE概述

DTA124EE规格参数

文档预览

DTA124EE相似产品对比

推荐资源