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IDT70V7399S133BC: 产品描述Dual-Port SRAM, 128KX18, 15ns, CMOS, PBGA256, BGA-256; 产品类别存储存储; 文件大小486KB，共22页; 制造商IDT (Integrated Device Technology)

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IDT70V7399S133BC概述

Dual-Port SRAM, 128KX18, 15ns, CMOS, PBGA256, BGA-256

IDT70V7399S133BC规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	IDT (Integrated Device Technology)
零件包装代码	BGA
包装说明	LBGA, BGA256,16X16,40
针数	256
Reach Compliance Code	not_compliant
ECCN代码	3A991.B.2.A
最长访问时间	15 ns
其他特性	FLOW-THROUGH OR PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)	133 MHz
I/O 类型	COMMON
JESD-30 代码	S-PBGA-B256
JESD-609代码	e0
长度	17 mm
内存密度	2359296 bit
内存集成电路类型	DUAL-PORT SRAM
内存宽度	18
湿度敏感等级	3
功能数量	1
端口数量	2
端子数量	256
字数	131072 words
字数代码	128000
工作模式	SYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	128KX18
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	LBGA
封装等效代码	BGA256,16X16,40
封装形状	SQUARE
封装形式	GRID ARRAY, LOW PROFILE
并行/串行	PARALLEL
峰值回流温度（摄氏度）	225
电源	2.5/3.3,3.3 V
认证状态	Not Qualified
座面最大高度	1.5 mm
最大待机电流	0.03 A
最小待机电流	3.15 V
最大压摆率	0.645 mA
最大供电电压 (Vsup)	3.45 V
最小供电电压 (Vsup)	3.15 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子面层	Tin/Lead (Sn63Pb37)
端子形式	BALL
端子节距	1 mm
端子位置	BOTTOM
处于峰值回流温度下的最长时间	20
宽度	17 mm

IDT70V7399S133BC相似产品对比

	IDT70V7399S133BC	IDT70V7399S166DD	IDT70V7399S133DD	5.0SMLJ200A	IDT70V7399S133BCI	IDT70V7399S133BFI	IDT70V7399S133BF	IDT70V7399S166BF	IDT70V7399S166BC	IDT70V7399S166BCI
描述	Dual-Port SRAM, 128KX18, 15ns, CMOS, PBGA256, BGA-256	Dual-Port SRAM, 128KX18, 12ns, CMOS, PQFP144, TQFP-144	Dual-Port SRAM, 128KX18, 15ns, CMOS, PQFP144, TQFP-144	Transient Voltage Suppressor 11 to 400 Volts 5000 Watt	Dual-Port SRAM, 128KX18, 15ns, CMOS, PBGA256, BGA-256	Dual-Port SRAM, 128KX18, 15ns, CMOS, PBGA208, FBGA-208	Dual-Port SRAM, 128KX18, 15ns, CMOS, PBGA208, FBGA-208	Dual-Port SRAM, 128KX18, 12ns, CMOS, PBGA208, FBGA-208	Dual-Port SRAM, 128KX18, 12ns, CMOS, PBGA256, BGA-256	Dual-Port SRAM, 128KX18, 12ns, CMOS, PBGA256, BGA-256
是否无铅	含铅	含铅	含铅	-	含铅	含铅	含铅	含铅	含铅	含铅
是否Rohs认证	不符合	不符合	不符合	-	不符合	不符合	不符合	不符合	不符合	不符合
厂商名称	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	-	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
零件包装代码	BGA	QFP	QFP	-	BGA	BGA	BGA	BGA	BGA	BGA
包装说明	LBGA, BGA256,16X16,40	LFQFP, QFP144,.87SQ,20	LFQFP, QFP144,.87SQ,20	-	LBGA, BGA256,16X16,40	TFBGA, BGA208,17X17,32	TFBGA, BGA208,17X17,32	TFBGA, BGA208,17X17,32	LBGA, BGA256,16X16,40	LBGA, BGA256,16X16,40
针数	256	144	144	-	256	208	208	208	256	256
Reach Compliance Code	not_compliant	not_compliant	not_compliant	-	not_compliant	not_compliant	_compli	_compli	_compli	_compli
ECCN代码	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	-	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
最长访问时间	15 ns	12 ns	15 ns	-	15 ns	15 ns	15 ns	12 ns	12 ns	12 ns
其他特性	FLOW-THROUGH OR PIPELINED ARCHITECTURE	FLOW-THROUGH OR PIPELINED ARCHITECTURE	FLOW-THROUGH OR PIPELINED ARCHITECTURE	-	FLOW-THROUGH OR PIPELINED ARCHITECTURE	FLOW-THROUGH OR PIPELINED ARCHITECTURE	FLOW-THROUGH OR PIPELINED ARCHITECTURE	FLOW-THROUGH OR PIPELINED ARCHITECTURE	FLOW-THROUGH OR PIPELINED ARCHITECTURE	FLOW-THROUGH OR PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)	133 MHz	166 MHz	133 MHz	-	133 MHz	133 MHz	133 MHz	166 MHz	166 MHz	166 MHz
I/O 类型	COMMON	COMMON	COMMON	-	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	S-PBGA-B256	S-PQFP-G144	S-PQFP-G144	-	S-PBGA-B256	S-PBGA-B208	S-PBGA-B208	S-PBGA-B208	S-PBGA-B256	S-PBGA-B256
JESD-609代码	e0	e0	e0	-	e0	e0	e0	e0	e0	e0
长度	17 mm	20 mm	20 mm	-	17 mm	15 mm	15 mm	15 mm	17 mm	17 mm
内存密度	2359296 bit	2359296 bit	2359296 bit	-	2359296 bit	2359296 bit	2359296 bi	2359296 bi	2359296 bi	2359296 bi
内存集成电路类型	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	-	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM
内存宽度	18	18	18	-	18	18	18	18	18	18
湿度敏感等级	3	4	4	-	3	3	3	3	3	3
功能数量	1	1	1	-	1	1	1	1	1	1
端口数量	2	2	2	-	2	2	2	2	2	2
端子数量	256	144	144	-	256	208	208	208	256	256
字数	131072 words	131072 words	131072 words	-	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words
字数代码	128000	128000	128000	-	128000	128000	128000	128000	128000	128000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	-	85 °C	85 °C	70 °C	70 °C	70 °C	85 °C
组织	128KX18	128KX18	128KX18	-	128KX18	128KX18	128KX18	128KX18	128KX18	128KX18
输出特性	3-STATE	3-STATE	3-STATE	-	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	LBGA	LFQFP	LFQFP	-	LBGA	TFBGA	TFBGA	TFBGA	LBGA	LBGA
封装等效代码	BGA256,16X16,40	QFP144,.87SQ,20	QFP144,.87SQ,20	-	BGA256,16X16,40	BGA208,17X17,32	BGA208,17X17,32	BGA208,17X17,32	BGA256,16X16,40	BGA256,16X16,40
封装形状	SQUARE	SQUARE	SQUARE	-	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
封装形式	GRID ARRAY, LOW PROFILE	FLATPACK, LOW PROFILE, FINE PITCH	FLATPACK, LOW PROFILE, FINE PITCH	-	GRID ARRAY, LOW PROFILE	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE
并行/串行	PARALLEL	PARALLEL	PARALLEL	-	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	225	225	225	-	225	225	225	225	225	225
电源	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V	-	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.5 mm	1.6 mm	1.6 mm	-	1.5 mm	1.2 mm	1.2 mm	1.2 mm	1.5 mm	1.5 mm
最大待机电流	0.03 A	0.03 A	0.03 A	-	0.04 A	0.04 A	0.03 A	0.03 A	0.03 A	0.04 A
最小待机电流	3.15 V	3.15 V	3.15 V	-	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V
最大压摆率	0.645 mA	0.79 mA	0.645 mA	-	0.675 mA	0.675 mA	0.645 mA	0.79 mA	0.79 mA	0.83 mA
最大供电电压 (Vsup)	3.45 V	3.45 V	3.45 V	-	3.45 V	3.45 V	3.45 V	3.45 V	3.45 V	3.45 V
最小供电电压 (Vsup)	3.15 V	3.15 V	3.15 V	-	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	-	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	-	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	-	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	-	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL
端子面层	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	-	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)
端子形式	BALL	GULL WING	GULL WING	-	BALL	BALL	BALL	BALL	BALL	BALL
端子节距	1 mm	0.5 mm	0.5 mm	-	1 mm	0.8 mm	0.8 mm	0.8 mm	1 mm	1 mm
端子位置	BOTTOM	QUAD	QUAD	-	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
处于峰值回流温度下的最长时间	20	20	20	-	20	20	20	20	20	20
宽度	17 mm	20 mm	20 mm	-	17 mm	15 mm	15 mm	15 mm	17 mm	17 mm

IDT70V7399S133BC

IDT70V7399S133BC概述

IDT70V7399S133BC规格参数

IDT70V7399S133BC相似产品对比

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