Standard SRAM, 64KX1, 70ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | IDT (Integrated Device Technology) |
| 零件包装代码 | DIP |
| 包装说明 | DIP, DIP22,.3 |
| 针数 | 22 |
| Reach Compliance Code | not_compliant |
| ECCN代码 | 3A001.A.2.C |
| 最长访问时间 | 70 ns |
| I/O 类型 | SEPARATE |
| JESD-30 代码 | R-GDIP-T22 |
| JESD-609代码 | e0 |
| 长度 | 27.051 mm |
| 内存密度 | 65536 bit |
| 内存集成电路类型 | STANDARD SRAM |
| 内存宽度 | 1 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 22 |
| 字数 | 65536 words |
| 字数代码 | 64000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 64KX1 |
| 输出特性 | 3-STATE |
| 可输出 | NO |
| 封装主体材料 | CERAMIC, GLASS-SEALED |
| 封装代码 | DIP |
| 封装等效代码 | DIP22,.3 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 并行/串行 | PARALLEL |
| 峰值回流温度（摄氏度） | 225 |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 筛选级别 | MIL-STD-883 Class B |
| 座面最大高度 | 5.08 mm |
| 最大待机电流 | 0.0006 A |
| 最小待机电流 | 2 V |
| 最大压摆率 | 0.09 mA |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | 20 |
| 宽度 | 7.62 mm |
| IDT7187L70DB | IDT7187L25DB | IDT7187L85DB | IDT7187S70DB | IDT7187S35DB | IDT7187L35DB | |
|---|---|---|---|---|---|---|
| 描述 | Standard SRAM, 64KX1, 70ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22 | Standard SRAM, 64KX1, 25ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22 | Standard SRAM, 64KX1, 85ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22 | Standard SRAM, 64KX1, 70ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22 | Standard SRAM, 64KX1, 35ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22 | Standard SRAM, 64KX1, 35ns, CMOS, CDIP22, 0.300 INCH, CERAMIC, DIP-22 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 零件包装代码 | DIP | DIP | DIP | DIP | DIP | DIP |
| 包装说明 | DIP, DIP22,.3 | 0.300 INCH, CERAMIC, DIP-22 | DIP, DIP22,.3 | DIP, DIP22,.3 | 0.300 INCH, CERAMIC, DIP-22 | 0.300 INCH, CERAMIC, DIP-22 |
| 针数 | 22 | 22 | 22 | 22 | 22 | 22 |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant |
| ECCN代码 | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C |
| 最长访问时间 | 70 ns | 25 ns | 85 ns | 70 ns | 35 ns | 35 ns |
| I/O 类型 | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE |
| JESD-30 代码 | R-GDIP-T22 | R-GDIP-T22 | R-GDIP-T22 | R-GDIP-T22 | R-GDIP-T22 | R-GDIP-T22 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 |
| 长度 | 27.051 mm | 27.051 mm | 27.051 mm | 27.051 mm | 27.051 mm | 27.051 mm |
| 内存密度 | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit |
| 内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| 内存宽度 | 1 | 1 | 1 | 1 | 1 | 1 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 22 | 22 | 22 | 22 | 22 | 22 |
| 字数 | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words |
| 字数代码 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| 组织 | 64KX1 | 64KX1 | 64KX1 | 64KX1 | 64KX1 | 64KX1 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 可输出 | NO | NO | NO | NO | NO | NO |
| 封装主体材料 | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED |
| 封装代码 | DIP | DIP | DIP | DIP | DIP | DIP |
| 封装等效代码 | DIP22,.3 | DIP22,.3 | DIP22,.3 | DIP22,.3 | DIP22,.3 | DIP22,.3 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度（摄氏度） | 225 | 225 | 225 | 225 | 225 | 225 |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 筛选级别 | MIL-STD-883 Class B | MIL-STD-883 Class B | MIL-STD-883 Class B | MIL-STD-883 Class B | MIL-STD-883 Class B | MIL-STD-883 Class B |
| 座面最大高度 | 5.08 mm | 5.08 mm | 5.08 mm | 5.08 mm | 5.08 mm | 5.08 mm |
| 最大待机电流 | 0.0006 A | 0.0006 A | 0.0006 A | 0.02 A | 0.02 A | 0.0006 A |
| 最小待机电流 | 2 V | 2 V | 2 V | 4.5 V | 4.5 V | 2 V |
| 最大压摆率 | 0.09 mA | 0.11 mA | 0.09 mA | 0.12 mA | 0.12 mA | 0.1 mA |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | 20 | 20 | 20 | 20 | 20 | 20 |
| 宽度 | 7.62 mm | 7.62 mm | 7.62 mm | 7.62 mm | 7.62 mm | 7.62 mm |
| 厂商名称 | IDT (Integrated Device Technology) | - | - | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
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