PD -96265
IRFH5250PbF
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= 10V)
25
1.15
52
1.3
100
V
m
:
PQFN 5X6 mm
Q
g (typical)
R
G (typical)
I
D
(@T
c(Bottom)
= 25°C)
nC
h
:
A
Applications
•
OR-ing MOSFET for 12V (typical) Bus in-Rush Current
•
Battery Operated DC Motor Inverter MOSFET
Features and Benefits
Features
Benefits
Low RDSon (<1.15 mΩ)
Low Thermal Resistance to PCB (<0.5°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Lower Conduction Losses
Enable better thermal dissipation
Increased Reliability
results in Increased Power Density
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFH5250TRPBF
IRFH5250TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C(Bottom)
= 25°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
Pulsed Drain Current
Max.
25
± 20
45
31
100
100
400
3.6
250
0.029
-55 to + 150
Units
V
g
Power Dissipation
g
Power Dissipation
c
h
@ 10V
h
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
g
Storage Temperature Range
Notes
through
are on page 8
www.irf.com
1
09/18/09
IRFH5250PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min.
25
–––
–––
–––
1.35
–––
–––
–––
–––
–––
181
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.02
0.9
1.4
1.80
-6.3
–––
–––
–––
–––
–––
110
52
13
7.8
17
15
25
36
1.3
28
46
30
19
7174
1758
828
Max. Units
–––
–––
1.15
1.75
2.35
–––
5.0
150
100
-100
–––
–––
78
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
pF
Conditions
V
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 50A
mΩ
V
GS
= 4.5V, I
D
= 50A
V
V
DS
= V
GS
, I
D
= 150µA
e
e
mV/°C
µA
nA
S
nC
V
DS
= 20V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 13V, I
D
= 50A
V
GS
= 10V, V
DS
= 13V, I
D
= 50A
V
DS
= 13V
V
GS
= 4.5V
I
D
= 50A
nC
nC
Ω
V
DS
= 16V, V
GS
= 0V
V
DD
= 13V, V
GS
= 4.5V
ns
I
D
= 50A
R
G
=1.8Ω
V
GS
= 0V
V
DS
= 13V
ƒ = 1.0MHz
Max.
468
50
Units
mJ
A
Avalanche Characteristics
E
AS
I
AR
d
Min.
–––
–––
–––
–––
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Typ.
–––
–––
–––
37
Max. Units
100
A
400
1.0
56
V
ns
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
–––
68
102
nC
Time is dominated by parasitic Inductance
p-n junction diode.
T
J
= 25°C, I
S
= 50A, V
GS
= 0V
T
J
= 25°C, I
F
= 50A, V
DD
= 13V
di/dt = 200A/µs
e
eÃ
Thermal Resistance
R
θJC
(Bottom)
R
θJC
(Top)
R
θJA
R
θJA
(<10s)
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
f
f
Parameter
g
g
Typ.
–––
–––
–––
–––
Max.
0.5
15
35
21
Units
°C/W
2
www.irf.com
IRFH5250PbF
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
1000
TOP
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
10
2.7V
2.7V
≤
60µs
PULSE WIDTH
1
0.1
1
Tj = 25°C
10
≤
60µs
PULSE WIDTH
Tj = 150°C
0.1
1
10
100
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
1.6
ID = 50A
VGS = 10V
ID, Drain-to-Source Current (A)
100
1.4
1.2
10
T J = 150°C
1.0
1
T J = 25°C
VDS = 15V
≤60µs
PULSE WIDTH
0.8
0.1
1
1.5
2
2.5
3
3.5
4
4.5
5
0.6
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance Vs. Temperature
14.0
ID= 50A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 20V
VDS= 13V
C, Capacitance (pF)
10000
Ciss
Coss
1000
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
20
40
60
80
100
120
140
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.Gate-to-Source Voltage
www.irf.com
3
IRFH5250PbF
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(ON)
ISD, Reverse Drain Current (A)
100
T J = 150°C
10
T J = 25°C
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-to-Drain Voltage (V)
ID, Drain-to-Source Current (A)
100µsec
100
1msec
10msec
10
Tc = 25°C
Tj = 150°C
Single Pulse
1
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
400
Limited By Package
VGS(th) , Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
3.0
350
300
250
200
150
100
50
0
25
50
2.5
ID, Drain Current (A)
2.0
1.5
ID = 1.0A
ID = 1.0mA
ID = 500µA
ID = 150µA
-75 -50 -25
0
25
50
75 100 125 150
1.0
75
100
125
150
0.5
T J , Temperature ( °C )
T C , Case Temperature (°C)
Fig 9.
Maximum Drain Current Vs.
Case (Bottom) Temperature
1
Thermal Response ( Z thJC ) °C/W
Fig 10.
Threshold Voltage Vs. Temperature
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
www.irf.com
IRFH5250PbF
RDS(on), Drain-to -Source On Resistance (m
Ω)
4
ID = 50A
3
2000
EAS , Single Pulse Avalanche Energy (mJ)
1800
1600
1400
1200
1000
800
600
400
200
0
25
50
75
ID
TOP
18A
24A
BOTTOM 50A
2
T J = 125°C
1
T J = 25°C
0
2
4
6
8
10
12
14
16
18
20
100
125
150
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (°C)
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
V
(BR)DSS
15V
tp
VDS
L
DRIVER
RG
20V
D.U.T
IAS
tp
+
V
- DD
A
I
AS
0.01
Ω
Fig 14a.
Unclamped Inductive Test Circuit
Fig 14b.
Unclamped Inductive Waveforms
V
DS
V
GS
R
G
V10V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1
R
D
90%
D.U.T.
+
V
DS
-
V
DD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 15a.
Switching Time Test Circuit
Fig 15b.
Switching Time Waveforms
www.irf.com
5
stm32/stm8
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
