US6M1
Transistors
4V+2.5V Drive Nch+Nch MOSFET
US6M1
Structure
Silicon N-channel / P-channel MOSFET
Dimensions
(Unit : mm)
TUMT6
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TUMT6).
Application
Power switching, DC / DC converter.
Abbreviated symbol : M01
Packaging specifications
Package
Type
US6M1
Code
Basic ordering unit (pieces)
Taping
TR
3000
Equivalent circuit
(6)
(5)
∗1
(4)
∗2
∗2
∗1
(1)
(2)
(3)
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Drain
(4) Tr2 (Pch) Source
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain
Absolute maximum ratings
(Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Storage temperature
∗1
Pw≤10µs, Duty cycle≤1%
∗2
Mounted on a ceramic board.
Symbol
V
DSS
V
GSS
I
D
I
DP
∗1
I
S
I
SP
∗1
P
D
∗2
Tch
Tstg
Continuous
Pulsed
Continuous
Pulsed
Limits
Unit
Tr1 : Nchannel Tr2 : Pchannel
30
V
−20
20
V
−12
A
±1
±1.4
A
±4
±5.6
0.6
A
−0.4
5.6
A
−4
1
W / TOTAL
0.7
150
−55
to
+150
W / ELEMENT
°C
°C
Thermal resistance
Parameter
Channel to ambient
∗2
Mounted on a ceramic board.
Symbol
Rth (ch-a)
∗
Limits
125
179
Unit
°C
/ W /TOTAL
°C
/ W / ELEMENT
Rev.B
0.2Max.
1/7
US6M1
Transistors
N-ch
Electrical characteristics
(Ta=25°C)
Parameter
Symbol
I
GSS
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
I
DSS
Gate threshold voltage
V
GS (th)
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
charge
Gate-drain
charge
∗Pulsed
R
DS (on)
∗
Y
fs
∗
C
iss
C
oss
C
rss
t
d (on)
∗
t
r
∗
t
d (off)
∗
t
f
∗
Q
g
∗
Q
gs
∗
Q
gd
∗
Min.
−
30
−
1.0
−
−
−
1.0
−
−
−
−
−
−
−
−
−
−
Typ.
−
−
−
−
170
250
270
−
70
15
12
6
6
13
8
1.4
0.6
0.3
Max.
10
−
1
2.5
240
350
380
−
−
−
−
−
−
−
−
2.0
−
−
Unit
µA
V
µA
V
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
V
GS
=20V,
V
DS
=0V
I
D
=1mA,
V
GS
=0V
V
DS
=30V,
V
GS
=0V
V
DS
=10V,
I
D
=1mA
I
D
=1.4A,
V
GS
=10V
I
D
=1.4A,
V
GS
=4.5V
I
D
=1.4A,
V
GS
=4V
I
D
=1.4A,
V
DS
=10V
V
DS
=10V
V
GS
=0V
f=1MHz
I
D
=0.7A,
V
DD
15V
V
GS
=10V
R
L
=21Ω
R
G
=10Ω
V
DD
15V R
L
=11Ω
V
GS
=5V
R
G
=10Ω
I
D
=1.4A
Body diode characteristics
(Source-Drain) (Ta=25°C)
Parameter
Forward voltage
Symbol
V
SD
Min.
−
Typ.
−
Max.
1.2
Unit
V
Test Conditions
I
S
=0.6A,
V
GS
=0V
Rev.B
2/7
US6M1
Transistors
P-ch
Electrical characteristics
(Ta=25°C)
Parameter
Symbol
I
GSS
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
Zero gate voltage drain current
I
DSS
Gate threshold voltage
V
GS (th)
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
charge
Gate-drain
charge
∗Pulsed
R
DS (on)
∗
Y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
∗
∗
∗
∗
∗
∗
∗
∗
Min.
−
−20
−
−0.7
−
−
−
0.7
−
−
−
−
−
−
−
−
−
−
Typ.
−
−
−
−
280
310
570
−
150
20
20
9
8
25
10
2.1
0.5
0.5
Max.
−10
−
−1
−2.0
390
430
800
−
−
−
−
−
−
−
−
−
−
−
Unit
µA
V
µA
V
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
V
GS
=12V,
V
DS
=0V
I
D
= −1mA,
V
GS
=0V
V
DS
= −20V,
V
GS
=0V
V
DS
= −10V,
I
D
= −1mA
I
D
= −1A,
V
GS
= −4.5V
I
D
= −1A,
V
GS
= −4V
I
D
= −0.5A,
V
GS
= −2.5V
I
D
= −0.5A,
V
DS
= −10V
V
DS
= −10V
V
GS
=0V
f=1MHz
I
D
= −0.5A,
V
DD
−15V
V
GS
= −4.5V
R
L
=30Ω
R
G
=10Ω
V
DD
−15V
R
L
=15Ω
V
GS
= −4.5V
R
G
=10Ω
I
D
= −1A
Body diode characteristics
(Source-Drain) (Ta=25°C)
Parameter
Forward voltage
Symbol
V
SD
Min.
−
Typ.
−
Max.
−1.2
Unit
V
Test Conditions
I
S
= −0.4A,
V
GS
=0V
Rev.B
3/7
US6M1
Transistors
N-ch
Electrical characteristic curves
1000
100
C
iss
C
rss
C
oss
SWITCHING TIME : t (ns)
CAPACITANCE : C (pF)
t
f
100
t
d (off)
10
GATE-SOURCE VOLTAGE : V
GS
(V)
Ta=25°C
f=1MHz
V
GS
=0V
1000
Ta=25°C
V
DD
=15V
V
GS
=4.5V
R
G
=10Ω
Pulsed
6
Ta=25°C
V
DD
=15V
5 I
D
=1.5A
R
G
=10Ω
Pulsed
4
3
2
1
0
10
t
d (on)
t
r
1
0.01
0.1
1
10
100
1
0.01
0.1
1
10
0
0.5
1
1.5
2
DRAIN-SOURCE VOLTAGE : V
DS
(A)
DRAIN CURRENT : I
D
(A)
TOTAL GATE CHARGE : Qg (nC)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
Fig.2 Switching Characteristics
Fig.3 Dynamic Input Characteristics
10
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(Ω)
V
DS
=10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
1
2
3
4
5
6
7
8
9
10
Ta=25°C
Pulsed
10
V
GS
=0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
1
I
D
=1.5A
I
D
=0.75A
SOURCE CURRENT : I
s
(A)
DRAIN CURRENT : I
D
(A)
1
0.1
0.1
0.01
0.001
0.0
0.5
1.0
1.5
2.0
2.5
0.01
0.0
0.5
1.0
1.5
GATE-SOURCE VOLTAGE : V
GS
(V)
GATE-SOURCE VOLTAGE : V
GS
(V)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
Fig.4 Typical Transfer Characteristics
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Fig.6 Source Current vs.
Source-Drain Voltage
10
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(Ω)
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(Ω)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(Ω)
V
GS
=4.5V
Pulsed
10
V
GS
=4.0V
Pulsed
10
V
GS
=2.5V
Pulsed
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
0.1
0.01
0.1
1
10
0.1
0.01
0.1
1
10
0.1
0.01
0.1
1
10
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
Rev.B
4/7
US6M1
Transistors
P-ch
Electrical characteristic curves
1000
GATE-SOURCE VOLTAGE :
−V
GS
(V)
SWITCHING TIME : t (ns)
Ta=25°C
f=1MHz
V
GS
=0V
10000
CAPACITANCE : C (pF)
1000
Ta=25°C
V
DD
= −15V
V
GS
= −4.5V
R
G
=10Ω
Pulsed
8
7
6
5
4
3
2
1
0
0
0.5
1
1.5
2
Ta=25°C
V
DD
= −15V
I
D
= −1A
R
G
=10Ω
Pulsed
t
f
100
C
iss
100
t
d (off)
t
d (on)
t
r
10
C
rss
C
oss
10
0.01
0.1
1
10
100
1
0.01
0.1
1
10
2.5
3
DRAIN-SOURCE VOLTAGE :
−V
DS
(V)
DRAIN CURRENT :
−I
D
(A)
TOTAL GATE CHARGE : Qg (nC)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
Fig.2 Switching Characteristics
Fig.3 Dynamic Input Characteristics
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
DRAIN CURRENT :
−I
D
(A)
Ta=25°C
V
DS
= −10V
Pulsed
Ta=25°C
Pulsed
750
1
REVERSE DRAIN CURRENT :
−I
S
(A)
10
1000
10
V
GS
=0V
Pulsed
I
D
= −1A
500
1
0.1
I
D
= −0.5A
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
0.1
0.01
250
0.001
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
0
0
2
4
6
8
10
12
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
GATE-SOURCE VOLTAGE :
−V
GS
(V)
GATE-SOURCE VOLTAGE :
−V
GS
(V)
SOURCE-DRAIN VOLTAGE :
−V
SD
(V)
Fig.4 Typical Transfer Characteristics
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Fig.6 Source Current vs.
Source-Drain Voltage
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
V
GS
= −4.5V
Pulsed
V
GS
= −4V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
10000
10000
10000
V
GS
= −2.5V
Pulsed
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
100
0.01
0.1
1
10
100
0.01
0.1
1
10
100
0.01
0.1
1
10
DRAIN CURRENT :
−I
D
(A)
DRAIN CURRENT :
−I
D
(A)
DRAIN CURRENT :
−I
D
(A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
Rev.B
5/7
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