UMT3906/SST3906/MMST3906
Transistors
PNP General Purpose Transistor
UMT3906 / SST3906 / MMST3906
Features
1) BV
CEO
>
−40V
(I
C
=
−1mA)
2) Complements the T3904/SST3904/MMST3909.
3) Low capacitance.
Dimensions
(Unit : mm)
UMT3906
ROHM : UMT3
EIAJ : SC-70
(1) Emitter
(2) Base
(3) Collector
Package, marking, and packaging specifications
Type
Packaging type
Marking
Code
Basic ordering unit (pieces)
UMT3906
UMT3
R2A
T106
3000
SST3906 MMST3906
SST3
R2A
T116
3000
SMT3
R2A
T146
3000
ROHM : SST3
(1) Emitter
(2) Base
(3) Collector
SST3906
MMST3906
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power
dissipation
UMT3906
SST3906,MMST3906
SST3906,MMST3906
Junction temperature
Storage temperature
Tj
Tstg
Symbol
V
CBO
V
CEO
V
EBO
I
O
Pd
Limits
−40
−40
−5
−0.2
6.2
0.35
150
−55
to
+150
Unit
V
V
V
A
W
W
°C
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
∗
°C
∗
When mounted on a 7
5 0.6mm ceramic board.
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
Min.
−40
−40
−5
−
−
−
−
−0.65
−
60
80
DC current transfer ratio
h
FE
100
60
30
Transition frequency
Collector output capacitance
Emitter input capacitance
Delay time
Rise time
Storage tiem
Fall time
f
T
Cob
Cib
td
tr
tstg
tf
250
−
−
−
−
−
−
Typ.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max.
−
−
−
−50
−50
−0.25
−0.4
−0.85
−0.95
−
−
300
−
−
−
4.5
10
35
35
225
75
MHz
pF
pF
ns
ns
ns
ns
−
Unit
V
V
V
nA
nA
V
V
I
C
=
−10µA
I
C
=
−1mA
I
E
=
−10µA
V
CB
=
−30V
V
EB
=
−3V
I
C
/I
B
=
−10mA/ −1mA
I
C
/I
B
=
−50mA/ −5mA
I
C
/I
B
=
−10mA/ −1mA
I
C
/I
B
=
−50mA/ −5mA
V
CE
=
−1V,
I
C
=
−0.1mA
V
CE
=
−1V,
I
C
=
−1mA
V
CE
=
−1V,
I
C
=
−10mA
V
CE
=
−1V,
I
C
=
−50mA
V
CE
=
−1V,
I
C
=
−100mA
V
CE
=
−20V,
I
E
=10mA, f=100MHz
V
CB
=
−10V,
f=100kHz, I
E
=0A
V
CB
=
−0.5V,
f=100kHz, I
C
=0A
V
CC
=
−3V,
V
BE(OFF)
=
−0.5V,I
C
=
−10mA,
I
B1
=
−1mA
V
CC
=
−3V,
V
BE(OFF)
=
−0.5V,I
C
=
−10mA,
I
B1
=
−1mA
V
CC
=
−3V,
I
C
=
−10mA,
I
B1
=
−I
B2
=
−1mA
V
CC
=
−3V,
I
C
=
−10mA,
I
B1
=
−I
B2
=
−1mA
Conditions
+
+
Rev.B
1/4
UMT3906/SST3906/MMST3906
Transistors
Ta=25
°C
V
CE
=5V
f=1kHz
V
BE(SAT)
BASE EMITTER SATURATION VOLTAGE (V)
500
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
1.0
10
I
C
-COLLECTOR CURRENT (
mA)
100
I
C
/ I
B
=10
Ta=25
°C
h
FE
-AC CURRENT GAIN
100
10
5
0.01
0.1
1.0
I
C
-COLLECTOR CURRENT (
mA)
10
100
Fig.5 AC current gain vs. collector current
Fig.6 Base-emitter saturation
voltage vs. collector current
V
BE(ON)
-BASE EMITTER ON VOLTAGE (V)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
V
CE
=5V
Ta=25
°C
1000
Ta=25
°C
I
C
/ I
B
=10
1000
Ta=25
°C
I
C
/ =I
B
=10
t
on
-TURN ON TIME (
ns)
100
15V
V
CC
=3V
10
40V
t
r
-RISE TIME (
ns)
100
10
1.0
10
100
I
C
-COLLECTOR CURRENT (
mA)
1
1.0
10
100
I
C
-COLLECTOR CURRENT (
mA)
1
1.0
10
100
I
C
-COLLECTOR CURRENT (
mA)
Fig.7 Grounded emitter propagation
characteristics
Fig.8 Turn-on time vs. collector
current
Fig.9
Rise time vs. collector
current
1000
I
C
=101
B1
=101
B2
Ta=25
°C
1000
50
I
C
=101
B1
=101
B2
Ta=25
°C
CAPACITANCE (
pF)
f=1MHz
Ta=25
°C
t
S
-STORAGE TIME (
ns)
tf-FALL TIME (
ns)
10
Cib
Cob
40V
15V
V
CC
=3V
100
100
1
10
1.0
10
100
I
C
-COLLECTOR CURRENT (
mA)
10
1.0
10
100
I
C
-COLLECTOR CURRENT (
mA)
0.5
0.1
1
10
REVERSE BIAS VOLTAGE (
V)
100
Fig.10 Storage time vs. collector
current
Fig.11 Fall time vs. collector
current
Fig.12
Input / output capacitance
vs. voltage
Rev.B
3/4
UMT3906/SST3906/MMST3906
Transistors
V
CE
COLLECTOR-EMITTER VOLTAGE (
V)
Ta=25°C
200MHz
100MHz
300MHz
400MHz
f
T
-CORRENT GAIN-BANDWIDTH PRODUCT (
MHz)
100
1000
h-PARAMETER NORMALIZED TO 1mA
V
CE
=5V
Ta=25
°C
100
I
C
=1mA
hie=4.08k
Ω
hfe=146
hre=2.20 10
−4
hoe=34.3µS
+
V
CE
=5V
f=270Hz
Ta=25
°C
hoe
10
10
100
300MHz
1.0
200MHz
hfe
1
hre
hie
0.1
0.1
100MHz
1
10
100
I
C
-COLLECTOR CURRENT (
mA)
10
1
10
100
I
C
-COLLECTOR CURRENT (
mA)
0.1
0.1
1
10
I
C
-COLLECTOR CURRENT (
mA)
100
Fig.13 Gain bandwidth product
Fig.14 Gain bandwidth product
vs. collector current
Fig.15 h parameter vs. collector current
12
10
I
CBO
-COLLECTOR CUTOFF CURRENT (
A)
NF-NOISE FIGURE (
dB)
Ta=25
°C
V
CE
=5V
I
C
=100µA
R
S
=10kΩ
10µ
V
CB
=25V
1µ
8
6
4
2
0
10
100n
10n
1n
0.1n
100
1k
f-FREQUENCY (
Hz)
10k
100k
0
25
50
75
100
125 150
T
A
-AMBIENT TEMPERATURE (
°C)
Fig.16 Noise vs. collector current
Fig.17 Noise characteristics (
Ι
)
100k
100k
12
R
S
-SOURCE RESISTANCE (Ω)
R
S
-SOURCE RESISTANCE (Ω)
B
10k
NF
3d
=1
dB
B
10k
R
S
-SOURCE RESISTANCE (Ω)
8d
5d
B
dB
Ta=25
°C
V
CE
=5V
f=30Hz
12
dB
100k
Ta=25
°C
V
CE
=5V
f=10Hz
B
8d
B
5d
10k
B
3d
NF
=1
dB
NF
=1
2d
B
8d
B
B
5d
3d
B
1k
NF
=
3d
B
5d B
8d dB
12
1d
B
Ta=25
°C
V
CE
=5V
f=10kHz
10
1k
NF
B
3d
=1
dB
1k
B
8d
B
10
NF
=
5d
3dB
B
5d
B
100
0.01
B
8d
100
0.01
0.1
1
I
C
-COLLECTOR CURRENT (
mA)
0.1
1
I
C
-COLLECTOR CURRENT (
mA)
100
0.01
0.1
1
I
C
-COLLECTOR CURRENT (
mA)
10
Fig.18
Noise characteristics (
ΙΙ
)
Fig.19 Noise characteristics (ΙΙΙ)
Fig.20 Noise characteristics ( )
Rev.B
ΛΙ
4/4
Appendix
Notes
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means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
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Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
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exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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2007 ROHM CO.,LTD.
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Appendix1-Rev2.0