2N2907AHR
Hi-Rel 60 V - 0.6 A PNP transistor
Datasheet — production data
Features
Parameter
BV
CEO
I
C
(max)
H
FE
at 10 V - 150 mA
■
■
■
■
Value
60 V
0.6 A
> 100
1
2
3
4
1
2
3
TO-18
3
1
2
Linear gain characteristics
Hermetic packages
ESCC and JANS qualified
European preferred part list EPPL
Figure 1.
LCC-3
LCC-3UB
Pin 4 in LCC-3UB is connected to the metallic lid.
Internal schematic diagram
Description
The 2N2907AHR is a silicon planar PNP
transistor specifically designed and housed in
hermetic packages for aerospace and Hi-Rel
applications. It is available in the JAN qualification
system (MIL-PRF19500 compliance) and in the
ESCC qualification system (ESCC 5000
compliance). In case of discrepancies between
this datasheet and the relevant agency
specification, the latter takes precedence.
Table 1.
Device summary
(1)
Qualification
JANS
Agency spec.
MIL-PRF-19500/291
Package
LCC-3UB
LCC-3UB
-
ESCC
5201/001
LCC-3
TO-18
Radiation level
EPPL
-
Yes
Yes
-
Order codes
JANS2N2907A
2N2907AUB
SOC2907A
2N2907AHR
1. Contact ST sales office for information about the specific conditions for products in die form and other JAN quality levels.
May 2012
This is information on a product in full production.
Doc ID 15382 Rev 3
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www.st.com
16
Contents
2N2907AHR
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
2.2
2.3
2.4
JANS electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
ESCC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
4
5
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Shipping details . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5.1
5.2
Data code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Documentation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/16
Doc ID 15382 Rev 3
2N2907AHR
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
V
CBO
V
CEO
V
EBO
I
C
Absolute maximum ratings
Parameter
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
for TO-18
for LCC-3 and LCC-3UB
Total dissipation at T
amb
≤
25 °C
ESCC: TO-18
LCC-3 and LCC-3UB
LCC-3 and LCC-3UB
(1)
JANS:
LCC-3UB
Total dissipation at T
case
≤
25 °C
ESCC:
TO-18
Total dissipation at T
sp(IS)
= 25 °C
JANS:
LCC-3UB
-0.6
-0.5
A
A
Value
-60
-60
-5
Unit
V
V
V
P
TOT
0.4
0.4
0.73
0.5
1.8
1
-65 to 200
200
W
T
stg
T
J
Storage temperature
Max. operating junction temperature
°C
°C
1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.
Table 3.
Symbol
Thermal data
Parameter
Thermal resistance junction-case (max) for JANS
LCC-3
LCC-3UB
-
-
90
-
325
437
240
(1)
TO-18
-
97
-
-
-
437
°C/W
Unit
R
thJC
Thermal resistance junction-case (max) for
ESCC
Thermal resistance junction-solder pad (infinite
sink) (max) for JANS
Rt
hJSP(IS)
Thermal resistance junction-solder pad (infinite
sink) (max) for ESCC
Thermal resistance junction-ambient (max) for
JANS
R
thJA
Thermal resistance junction-ambient (max) for
ESCC
1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.
Doc ID 15382 Rev 3
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Electrical characteristics
2N2907AHR
2
Electrical characteristics
(a)
JANS and ESCC version of the products are assembled and tested in compliance with the
agency specification it is qualified in. The electrical characteristics of each version are
provided in dedicated tables.
T
case
= 25 °C unless otherwise specified.
2.1
JANS electrical characteristics
Table 4.
Symbol
JANS electrical characteristics
Parameter
Collector cut-off
current (I
E
= 0)
Collector cut-off
current
(I
E
= 0)
Emitter cut-off current
(I
C
= 0)
(1)
Test conditions
V
CB
= 60 V
V
CB
= 50 V
V
CB
= 50 V
V
CE
= 50 V
V
EB
= 5 V
V
EB
= 4 V
I
C
= 10 mA
I
C
= 150 mA
I
C
= 500 mA
I
C
= 150 mA
I
C
=500mA
I
C
= 0.1 mA
I
C
= 1 mA
I
C
= 10 mA
I
C
= 150 mA
I
C
= 500 mA
I
C
= 10 mA
T
amb
= -55 °C
V
CE
= 20 V
f = 100 MHz
V
CE
= 10 V
f = 1 kHz
I
B
= 15 mA
I
B
= 50 mA
I
B
= 15 mA
I
B
=50mA
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
I
C
= 20 mA
I
C
=1 mA
Min.
Typ.
Max.
10
10
10
50
10
50
Unit
µA
nA
µA
nA
µA
nA
V
I
CBO
-
T
amb
= 150 °C
-
I
CES
I
EBO
-
V
(BR)CEO
Collector-emitter
breakdown voltage
(I
B
= 0)
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
60
-
0.4
1.6
1.3
2.6
450
-
300
V
CE(sat) (1)
V
BE(sat) (1)
-
0.6
75
100
100
100
50
50
2
100
-
V
V
V
h
FE (1)
DC current gain
h
fe
Small signal current
gain
C
obo
Output capacitance
(I
E
= 0)
V
CB
= 10 V
100 kHz
≤
f
≤
1 MHz
-
8
pF
a. For PNP type, voltage and current values are negative.
4/16
Doc ID 15382 Rev 3
2N2907AHR
Table 4.
Symbol
C
ibo
t
on
t
off
Electrical characteristics
JANS electrical characteristics (continued)
Parameter
Output capacitance
(I
E
= 0)
Turn-on time
Turn-off time
Test conditions
V
EB
= 2 V
100 kHz
≤
f
≤
1 MHz
V
CC
= 30 V
I
B1
= 15 mA
I
C
= 150 mA
Min.
Typ.
-
-
-
Max.
30
45
300
Unit
pF
ns
ns
V
CC
= 30 V
I
C
= 150 mA
I
B1
= -I
B2
= 15 mA
1. Pulsed duration = 300 µs, duty cycle
≤
2 %
2.2
ESCC electrical characteristics
Table 5.
Symbol
I
CBO
ESCC electrical characteristics
Parameter
Collector cut-off
current (I
E
= 0)
Collector-base
breakdown voltage
(I
E
= 0)
Collector-emitter
breakdown voltage
(I
B
= 0)
Emitter-base
breakdown voltage
(I
C
= 0)
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Test conditions
V
CB
= 50 V
V
CB
= 50 V
I
C
= 10 µA
Min.
Typ.
-
Max.
10
10
Unit
nA
µA
V
T
amb
= 150 °C
60
V
(BR)CBO
-
V
(BR)CEO
(1)
I
C
= 10 mA
60
-
V
V
(BR)EBO
V
CE(sat) (1)
V
BE(sat) (1)
I
E
= 10 µA
5
-
V
I
C
= 150 mA
I
C
= 150 mA
I
C
= 0.1 mA
I
C
= 10 mA
I
C
= 150 mA
I
C
= 500 mA
V
CE
= 20 V
f = 100 MHz
I
B
= 15 mA
I
B
= 15 mA
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
I
C
= 20 mA
75
100
100
50
2
-
0.87
0.4
1.3
V
V
h
FE (1)
DC current gain
-
300
h
fe
C
obo
t
on
t
off
Small signal current
gain
Output capacitance
(I
E
= 0)
Turn-on time
Turn-off time
-
-
-
-
8
45
300
pF
ns
ns
V
CB
= 10 V
100 kHz
≤
f
≤
1 MHz
V
CC
= 30 V
I
B1
= 15 mA
I
C
= 150 mA
V
CC
= 30 V
I
C
= 150 mA
I
B1
= -I
B2
= 15 mA
1. Pulsed duration = 300 µs, duty cycle
≤
2 %
Doc ID 15382 Rev 3
5/16
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