4V Drive Nch+Pch MOSFET
SH8M3
Structure
Silicon N-channel / P-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
Application
Power switching, DC / DC converter.
Each lead has same dimensions
Dimensions
(Unit : mm)
SOP8
Packaging
specifications
Package
Type
SH8M3
Code
Basic ordering unit (pieces)
Taping
TB
2500
Inner
circuit
(8)
(7)
(6)
(5)
(8) (7) (6) (5)
∗2
∗2
(1) (2) (3) (4)
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Source
(4) Tr2 (Pch) Gate
(5) Tr2 (Pch) Drain
(6) Tr2 (Pch) Drain
(7) Tr1 (Nch) Drain
(8) Tr1 (Nch) Drain
Absolute
maximum ratings
(Ta=25C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Storage temperature
∗1
Pw≤10μs, Duty cycle≤1%
∗2
MOUNTED ON A CERAMIC BOARD.
∗1
∗1
Symbol
V
DSS
V
GSS
I
D
I
DP
∗1
I
S
I
SP
∗1
P
D
∗2
Tch
Tstg
Continuous
Pulsed
Continuous
Pulsed
Limits
Nchannel
Pchannel
30
−30
±20
±20
±4.5
±5.0
±18
±20
1.6
−1.6
20
−18
2
150
−55
to
+150
Unit
V
V
A
A
A
A
W
°C
°C
(1)
(2)
(3)
(4)
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
∗A
protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
Thermal
resistance
Parameter
Channel to ambient
∗MOUNTED
ON A CERAMIC BOARD.
Symbol
Rth (ch-a)
∗
Limits
62.5
Unit
°C
/ W
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c
○
2009 ROHM Co., Ltd. All rights reserved.
1/5
2009.12 - Rev.A
SH8M3
N-ch
Electrical
characteristics
(Ta=25C)
Parameter
Symbol
Min.
−
30
−
1.0
−
−
−
3.0
−
−
−
−
−
−
−
−
−
−
Typ.
−
−
−
−
36
52
58
−
230
80
50
6
8
22
5
3.9
1.1
1.4
Max.
±10
−
1
2.5
51
73
82
−
−
−
−
−
−
−
−
−
−
−
I
GSS
Gate-source leakage
Drain-source breakdown voltage V
(BR) DSS
Zero gate voltage drain current
I
DSS
V
GS (th)
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
Data Sheet
Unit
μA
V
μA
V
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
V
GS
=±20V,
V
DS
=0V
I
D
=1mA,
V
GS
=0V
V
DS
=30V,
V
GS
=0V
V
DS
=10V,
I
D
=1mA
I
D
=5.0A,
V
GS
=10V
I
D
=5.0A,
V
GS
=4.5V
I
D
=5.0A,
V
GS
=4V
I
D
=5.0A,
V
DS
=10V
V
DS
=10V
V
GS
=0V
f=1MHz
I
D
=2.5A,
V
DD
15V
V
GS
=10V
R
L
=6.0Ω
R
G
=10Ω
V
DD
15V
V
GS
=5V
I
D
=5.0A
R
DS (on)
∗
Y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
∗
∗
∗
∗
∗
∗
∗
∗
Body
diode characteristics
(Source-Drain) (Ta=25C)
Parameter
Forward voltage
∗Pulsed
Symbol
V
SD
∗
Min.
−
Typ.
−
Max.
1.2
Unit
V
Conditions
I
S
=6.4A,
V
GS
=0V
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c
○
2009 ROHM Co., Ltd. All rights reserved.
2/5
2009.12 - Rev.A
SH8M3
P-ch
Electrical
characteristics
(Ta=25C)
Parameter
Symbol
Min.
Typ.
−
−
−
−
40
57
65
−
850
190
120
10
25
60
25
8.5
2.5
3.0
Max.
±10
−
−1
−2.5
56
80
90
−
−
−
−
−
−
−
−
−
−
−
I
GSS
−
Gate-source leakage
Drain-source breakdown voltage V
(BR) DSS
−30
Zero gate voltage drain current
I
DSS
−
V
GS (th)
−1.0
Gate threshold voltage
−
Static drain-source on-state
∗
R
DS (on)
−
resistance
−
∗
3.5
Y
fs
Forward transfer admittance
C
iss
−
Input capacitance
−
C
oss
Output capacitance
C
rss
−
Reverse transfer capacitance
∗
−
t
d (on)
Turn-on delay time
∗
−
t
r
Rise time
∗
t
d (off)
−
Turn-off delay time
t
f
∗
−
Fall time
∗
−
Q
g
Total gate charge
∗
Q
gs
−
Gate-source charge
∗
−
Q
gd
Gate-drain charge
∗Pulsed
Data Sheet
Unit
μA
V
μA
V
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
V
GS
= ±20V,
V
DS
=0V
I
D
= −1mA,
V
GS
=0V
V
DS
=−30V,
V
GS
=0V
V
DS
= −10V,
I
D
= −1mA
I
D
= −4.5A,
V
GS
= −10V
I
D
= −2.5A,
V
GS
= −4.5V
I
D
= −2.5A,
V
GS
= −4.0V
I
D
= −2.5A,
V
DS
= −10V
V
DS
= −10V
V
GS
=0V
f=1MHz
I
D
= −2.5A,
V
DD
−15V
V
GS
= −10V
R
L
=6.0Ω
R
G
=10Ω
V
DD
−15V
V
GS
= −5V
I
D
= −4.5A
Body
diode characteristics
(Source-Drain) (Ta=25C)
Parameter
Forward voltage
Symbol
V
SD
Min.
−
Typ.
−
Max.
−1.2
Unit
V
Conditions
I
S
= −1.6A,
V
GS
=0V
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c
○
2009 ROHM Co., Ltd. All rights reserved.
3/5
2009.12 - Rev.A
SH8M3
N-ch
Electrical
characteristic curves
1000
Data Sheet
1000
t
f
C
iss
100
GATE-SOURCE VOLTAGE : V
GS
(V)
10
SWITCHING TIME : t (ns)
Ta=25°C
f=1MHz
V
GS
=0V
10000
CAPACITANCE : C (pF)
Ta=25°C
V
DD
=15V
V
GS
=10V
R
G
=10Ω
Pulsed
10
Ta=25°C
9 V
DD
=15V
I
D
=5A
8
R
G
=10Ω
7 Pulsed
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
100
t
d (off)
C
oss
C
rss
10
t
r
t
d (on)
10
0.01
0.1
1
10
100
1
0.01
0.1
1
DRAIN-SOURCE VOLTAGE : V
DS
(V)
DRAIN CURRENT : I
D
(A)
TOTAL GATE CHARGE : Qg (nC)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
Fig.2 Switching Characteristics
Fig.3 Dynamic Input Characteristics
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
10
V
DS
=10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
300
Ta=25°C
Pulsed
250
200
150
100
50
0
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
V
GS
=0V
Pulsed
1
SOURCE CURRENT : I
s
(A)
DRAIN CURRENT : I
D
(A)
0.1
I
D
=5A
I
D
=2.5A
1
0.1
0.01
0.001
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
2
4
6
8
10
12
14
16
0.01
0.0
0.5
1.0
1.5
GATE-SOURCE VOLTAGE : V
GS
(V)
GATE-SOURCE VOLTAGE : V
GS
(V)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
Fig.4 Typical Transfer Characteristics
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Fig.6 Source Current vs.
Source-Drain Voltage
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
V
GS
=10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
V
GS
=4.5V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
1000
1000
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
V
GS
=4V
Pulsed
100
100
100
10
10
10
1
0.1
1
10
1
0.1
1
10
1
0.1
1
10
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
www.rohm.com
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○
2009 ROHM Co., Ltd. All rights reserved.
4/5
2009.12 - Rev.A
SH8M3
P-ch
Electrical
characteristic curves
10000
Data Sheet
GATE-SOURCE VOLTAGE :
−V
GS
(V)
SWITCHING TIME : t (ns)
Ta=25°C
f=1MHz
V
GS
=0V
10000
CAPACITANCE : C (pF)
1000
1000
Ta=25°C
V
DD
= −15V
V
GS
= −10V
R
G
=10Ω
Pulsed
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
Ta=25°C
V
DD
= −15V
I
D
= −4.5A
R
G
=10Ω
Pulsed
C
iss
t
f
100
t
d (off)
100
C
oss
C
rss
10
t
d (on)
t
r
10
0.01
0.1
1
10
100
1
0.01
0.1
1
10
8
9
10
DRAIN-SOURCE VOLTAGE :
−V
DS
(V)
DRAIN CURRENT :
−I
D
(A)
TOTAL GATE CHARGE : Qg (nC)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
Fig.2 Switching Characteristics
Fig.3 Dynamic Input Characteristics
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
10
V
DS
= −10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
200
10
SOURCE CURRENT :
−I
S
(A)
Ta=25°C
Pulsed
150
V
GS
=0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
DRAIN CURRENT :
−I
D
(A)
1
I
D
=−4.5A
I
D
=−2.0A
1
0.1
100
0.1
0.01
50
0.001
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
0
2
4
6
8
10
12
14
16
0.01
0.0
0.5
1.0
1.5
GATE-SOURCE VOLTAGE :
−V
GS
(V)
GATE-SOURCE VOLTAGE :
−V
GS
(V)
SOURCE-DRAIN VOLTAGE :
−V
SD
(V)
Fig.4 Typical Transfer Characteristics
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Fig.6 Source Current vs.
Source-Drain Voltage
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
1000
V
GS
= −10V
Pulsed
1000
V
GS
= −4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
1000
V
GS
= −4V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
100
100
10
0.1
1
10
10
0.1
1
10
10
0.1
1
10
DRAIN CURRENT :
−I
D
(A)
DRAIN CURRENT :
−I
D
(A)
DRAIN CURRENT :
−I
D
(A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
www.rohm.com
c
○
2009 ROHM Co., Ltd. All rights reserved.
5/5
2009.12 - Rev.A
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