Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3
| 参数名称 | 属性值 |
| 厂商名称 | KEC |
| 包装说明 | IN-LINE, R-PSIP-T3 |
| 针数 | 3 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 最大集电极电流 (IC) | 5 A |
| 集电极-发射极最大电压 | 100 V |
| 配置 | SINGLE |
| 最小直流电流增益 (hFE) | 120 |
| JESD-30 代码 | R-PSIP-T3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 极性/信道类型 | PNP |
| 最大功率耗散 (Abs) | 20 W |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 30 MHz |
| KTA1042L-Y | KTA1042D-Y-RTF/P | KTA1042D-Y | KTA1042D-O | KTA1042L-O | |
|---|---|---|---|---|---|
| 描述 | Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3 | 额定功率：20W 集电极电流Ic：5A 集射极击穿电压Vce：100V 晶体管类型：PNP PNP,100V,5A | Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 | Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 | Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3 |
| 厂商名称 | KEC | - | KEC | KEC | KEC |
| 包装说明 | IN-LINE, R-PSIP-T3 | - | DPAK-3 | DPAK-3 | IN-LINE, R-PSIP-T3 |
| 针数 | 3 | - | 3 | 3 | 3 |
| Reach Compliance Code | unknown | - | unknown | unknown | unknown |
| ECCN代码 | EAR99 | - | EAR99 | EAR99 | EAR99 |
| 最大集电极电流 (IC) | 5 A | - | 5 A | 5 A | 5 A |
| 集电极-发射极最大电压 | 100 V | - | 100 V | 100 V | 100 V |
| 配置 | SINGLE | - | SINGLE | SINGLE | SINGLE |
| 最小直流电流增益 (hFE) | 120 | - | 120 | 70 | 70 |
| JESD-30 代码 | R-PSIP-T3 | - | R-PSSO-G2 | R-PSSO-G2 | R-PSIP-T3 |
| 元件数量 | 1 | - | 1 | 1 | 1 |
| 端子数量 | 3 | - | 2 | 2 | 3 |
| 最高工作温度 | 150 °C | - | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | - | SMALL OUTLINE | SMALL OUTLINE | IN-LINE |
| 极性/信道类型 | PNP | - | PNP | PNP | PNP |
| 最大功率耗散 (Abs) | 20 W | - | 20 W | 20 W | 20 W |
| 表面贴装 | NO | - | YES | YES | NO |
| 端子形式 | THROUGH-HOLE | - | GULL WING | GULL WING | THROUGH-HOLE |
| 端子位置 | SINGLE | - | SINGLE | SINGLE | SINGLE |
| 晶体管元件材料 | SILICON | - | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 30 MHz | - | 30 MHz | 30 MHz | 30 MHz |
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