Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3
参数名称 | 属性值 |
厂商名称 | KEC |
包装说明 | DPAK-3 |
针数 | 3 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
最大集电极电流 (IC) | 5 A |
集电极-发射极最大电压 | 100 V |
配置 | SINGLE |
最小直流电流增益 (hFE) | 70 |
JESD-30 代码 | R-PSSO-G2 |
元件数量 | 1 |
端子数量 | 2 |
最高工作温度 | 150 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
极性/信道类型 | PNP |
最大功率耗散 (Abs) | 20 W |
表面贴装 | YES |
端子形式 | GULL WING |
端子位置 | SINGLE |
晶体管元件材料 | SILICON |
标称过渡频率 (fT) | 30 MHz |
KTA1042D-O | KTA1042D-Y-RTF/P | KTA1042D-Y | KTA1042L-O | KTA1042L-Y | |
---|---|---|---|---|---|
描述 | Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 | 额定功率:20W 集电极电流Ic:5A 集射极击穿电压Vce:100V 晶体管类型:PNP PNP,100V,5A | Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3 | Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3 | Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3 |
厂商名称 | KEC | - | KEC | KEC | KEC |
包装说明 | DPAK-3 | - | DPAK-3 | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 |
针数 | 3 | - | 3 | 3 | 3 |
Reach Compliance Code | unknown | - | unknown | unknown | unknown |
ECCN代码 | EAR99 | - | EAR99 | EAR99 | EAR99 |
最大集电极电流 (IC) | 5 A | - | 5 A | 5 A | 5 A |
集电极-发射极最大电压 | 100 V | - | 100 V | 100 V | 100 V |
配置 | SINGLE | - | SINGLE | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 70 | - | 120 | 70 | 120 |
JESD-30 代码 | R-PSSO-G2 | - | R-PSSO-G2 | R-PSIP-T3 | R-PSIP-T3 |
元件数量 | 1 | - | 1 | 1 | 1 |
端子数量 | 2 | - | 2 | 3 | 3 |
最高工作温度 | 150 °C | - | 150 °C | 150 °C | 150 °C |
封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | - | SMALL OUTLINE | IN-LINE | IN-LINE |
极性/信道类型 | PNP | - | PNP | PNP | PNP |
最大功率耗散 (Abs) | 20 W | - | 20 W | 20 W | 20 W |
表面贴装 | YES | - | YES | NO | NO |
端子形式 | GULL WING | - | GULL WING | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | SINGLE | - | SINGLE | SINGLE | SINGLE |
晶体管元件材料 | SILICON | - | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | 30 MHz | - | 30 MHz | 30 MHz | 30 MHz |
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