MBRS10H100CT thru MBRS10H200CT
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Low power loss, high efficiency
- Ideal for automated placement
- Guardring for overvoltage protection
- High surge current capability
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Dual Common Cathode Schottky Rectifier
MECHANICAL DATA
Case:
TO-263AB (D
2
PAK)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
As marked
Weight:
1.4 g (approximately)
TO-263AB (D
2
PAK)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak repetitive forward current
(Rated VR, Square wave, 20KHz)
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
I
F
= 5 A, T
J
=25℃
I
F
= 5 A, T
J
=125℃
I
F
= 10 A, T
J
=25℃
I
F
= 10 A, T
J
=125℃
Maximum reverse current @ rated VR
Voltage rate of change (Rated V
R
)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0
μs,
1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
T
J
=25
℃
T
J
=125
℃
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FRM
I
FSM
I
RRM
0.85
V
F
0.75
0.95
0.85
I
R
dV/dt
R
θJC
T
J
T
STG
5
1
10000
3.5
- 55 to +175
- 55 to +175
1
0.88
0.75
0.97
0.85
μA
mA
V/μs
O
MBRS
10H100CT
100
70
100
MBRS
10H150CT
150
105
150
10
10
120
MBRS
10H200CT
200
140
200
Unit
V
V
V
A
A
A
0.5
A
V
C/W
O
O
C
C
Document Number: DS_D1309058
Version: H13
MBRS10H100CT thru MBRS10H200CT
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
MBRS10HxxxCT
(Note 1)
AEC-Q101
QUALIFIED
Prefix "H"
RN
C0
PACKING CODE
GREEN COMPOUND
CODE
Suffix "G"
D
2
PAK
D
2
PAK
800 / 13" Paper reel
50 / Tube
PACKAGE
PACKING
Note 1: "xx" defines voltage from 100V (MBRS10H100CT) to 200V (MBRS10H200CT)
EXAMPLE
PREFERRED P/N
MBRS10H100CT RN
MBRS10H100CTHRN
PART NO.
MBRS10H100CT
MBRS10H100CT
H
AEC-Q101
QUALIFIED
PACKING CODE
RN
RN
RN
G
Green compound
AEC-Q101 qualified
GREEN COMPOUND
CODE
DESCRIPTION
MBRS10H100CT RNG MBRS10H100CT
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG.1 FORWARD CURRENT DERATING CURVE
12
AVERAGE FORWARD
A
CURRENT (A)
10
8
6
4
2
0
50
60 70 80
90 100 110 120 130 140 150 160 170 180
CASE TEMPERATURE (
o
C)
RESISTIVE OR
INDUCTIVELOAD
PEAK FORWARD SURGE CURRENT (A)
180
150
120
90
60
30
0
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT
8.3ms Single Half Sine Wave
JEDEC Method
1
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
100
INSTANTANEOUS FORWARD
A
CURRENT (A)
INSTANTANEOUS REVERSE
A
CURRENT (mA)
10
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
TJ=125℃
10
1
TJ=125℃
0.1
TJ=75℃
1
TJ=25℃
0.01
PULSE WIDTH=300μs
1% DUTY CYCLE
0.1
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
FORWARD VOLTAGE (V)
0.001
TJ=25℃
0.0001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Document Number: DS_D1309058
Version: H13
MBRS10H100CT thru MBRS10H200CT
Taiwan Semiconductor
FIG. 5 TYPICAL JUNCTION CAPACITANCE
1000
JUNCTION CAPACITANCE (pF)
A
900
800
700
600
500
400
300
200
100
0.1
1
10
100
REVERSE VOLTAGE (V)
f=1.0MHz
Vsig=50mVp-p
TRANSIENT THERMAL
IMPEDANCE(℃/W)
10
100
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
1
0.1
0.01
0.1
1
T-PULSE DURATION(s)
10
100
PACKAGE OUTLINE DIMENSIONS
Unit (mm)
Min
-
14.60
2.41
0.68
2.29
4.44
1.14
1.14
8.25
0.36
2.03
Max
10.5
15.88
2.67
0.94
2.79
4.70
1.40
1.40
9.25
0.53
2.79
Unit (inch)
Min
-
0.575
0.095
0.027
0.090
0.175
0.045
0.045
0.325
0.014
0.080
Max
0.413
0.625
0.105
0.037
0.110
0.185
0.055
0.055
0.364
0.021
0.110
DIM.
A
B
C
D
E
F
G
H
I
J
K
SUGGESTED PAD LAYOUT
Symbol
A
B
C
D
E
F
G
Unit (mm)
10.8
8.3
1.1
3.5
16.9
9.5
2.5
Unit (inch)
0.425
0.327
0.043
0.138
0.665
0.374
0.098
MARKING DIAGRAM
P/N
G
YWW
F
= Specific Device Code
= Green Compound
= Date Code
= Factory Code
Document Number: DS_D1309058
Version: H13
MBRS10H100CT thru MBRS10H200CT
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1309058
Version: H13
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