Low VCE (sat) Digital transistors
(with built-in resistors)
DTD543EE / DTD543EM
Applications
Inverter, Interface, Driver
Dimensions
(Unit : mm)
DTD543EE
1.6
0.3
0.7
0.55
Structure
NPN digital transistor (Built-in resistor type)
0.2
(3)
0.8
(2)
(1)
1.6
0.2
0.5 0.5
0.15
0.1Min.
0.13
Feature
1. V
CE
(sat) is lower than conventional products.
2. Built-in bias resistors enable the configuration of
an inverter circuit without connecting
external input resistors (see equivalent circuit).
3. The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
4. Only the on / off conditions need to be set for operation,
making device design easy.
1.0
EMT3
JEITA No. (SC-75A)
JEDEC No. <SOT-416>
(1) GND
(2) IN
(3) OUT
Each lead has same dimensions
Addreviated symbol : X23
DTD543EM
0.2
0.8
1.2
0.22
(1)(2)
1.2
0.32
(3)
0.4 0.4
0.8
0.5
(1) IN
(2) GND
(3) OUT
VMT3
Each lead has same dimensions
Addreviated symbol : X23
Packaging specifications
Package
Packaging type
Code
Part No.
DTD543EE
DTD543EM
−
Basic ordering
unit (pieces)
EMT3
Taping
TL
3000
VMT3
Taping
T2L
8000
−
Absolute maximum ratings
(Ta=25°C)
Parameter
Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
∗1
∗2
Inner circuit
Limits
Unit
R
1
OUT
Symbol
V
CC
V
IN
I
C (max)
PD
Tj
Tstg
DTD543EE DTD543EM
12
−10
to
+12
500
150
150
−55
to
+150
V
V
mA
mW
IN
R
2
GND
IN
OUT
GND
C
C
∗1
Characteristics of built-in transistor.
∗2
Each terminal mounted on a recommended land.
R
1
=4.7kΩ / R
2
=4.7kΩ
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c
○
2009 ROHM Co., Ltd. All rights reserved.
0.2
1/2
2009.05 - Rev.B
DTD543EE / DTD543EM
Electrical characteristics
(Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
∗
Input resistance
Resistance ratio
∗
Characteristics of built-in transistor.
Data Sheet
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
f
T
R
1
R
2
/R
1
Min.
−
2.5
−
−
−
115
−
3.29
0.8
Typ.
−
−
60
−
−
−
260
4.7
1.0
Max.
0.5
−
300
1.4
0.5
−
−
6.11
1.2
Unit
V
mV
mA
µA
−
MHz
kΩ
−
Conditions
V
CC
= 5V, I
O
= 100µA
V
O
= 0.3V, I
O
= 20mA
I
O
/I
I
= 100mA / 5mA
V
I
= 5V
V
CC
= 12V, V
I
=0V
V
O
= 2V, I
O
= 100mA
V
CE
= 10V, I
E
=−5mA, f=100MHz
−
−
Electrical characteristics curves
-100
-50
OUTPUT CURRENT : Io (
A)
(
V
)
V
O
= 0.3V
-10m
-5m
-2m
-1m
-500∝
-200∝
-100∝
-50∝
-20∝
-10∝
-5∝
-2∝
-1∝
0
Ta=100 C
25 C
40 C
V
CC
= 5V
1k
500
DC CURRENT GAIN : G
I
V
O
= 5V
Ta=100 C
25 C
40 C
(on)
-20
-10
-5
-2
-1
-500m
-200m
-100m
-500∝ -1m -2m
-5m -10m -20m -50m-100m-200m -500m
Ta= 40 C
25 C
100 C
200
100
50
20
10
5
2
INPUT VOLTAGE : V
I
-0.5
-1.0
-1.5
-2.0
-2.5
-3.0
1
-500∝ -1m -2m
-5m -10m -20m -50m-100m-200m -500m
OUTPUT CURRENT : I
O
(
A)
INPUT VOLTAGE : V
I (off)
(
V)
OUTPUT CURRENT : I
O
(
A)
Fig.1
Input voltage vs. output current
(ON characteristics)
l
O
/l
I
=20
Ta=100 C
25 C
40 C
Fig.2
Output current vs. input voltage
(OFF characteristics)
Fig.3 DC current gain vs. output
current
-1
-500m
OUTPUT VOLTAGE : V
O (on)
(
V)
-200m
-100m
-50m
-20m
-10m
-5m
-2m
-1m
-500∝ -1m -2m
-5m -10m -20m -50m-100m-200m -500m
OUTPUT CURRENT : I
O
(
A)
Fig.4 Output voltage vs. output
current
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c
○
2009 ROHM Co., Ltd. All rights reserved.
2/2
2009.05 - Rev.B
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