NEC'S SURFACE MOUNT NPN
SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• LOW COST
• SMALL AND ULTRA SMALL SIZE PACKAGES
• LOW VOLTAGE/LOW CURRENT OPERATION
• HIGH GAIN BANDWIDTH PRODUCT:
f
T
of 12 GHz
• NOISE FIGURES OF 1.5 dB AT 2.0 GHZ
NE685
SERIES
e rs
mb o t
:
TE art nu e n
NO g p
n.
ar
DESCRIPTION
SE
sig
n
et
LEA llowi tashe ew de r
P
fo
fo
r n
da
e
fo
is
Th
ice
th
ded es off
rom men sal
f
com call
re
ase
Pl e i l s :
ELECTRICAL CHARACTERISTICS
et a 539R
d
68
NE 8530
E6
N
33
685
NE
18 (SOT 343 STYLE)
19 (3 PIN ULTRA SUPER
MINI MOLD)
NEC's family of high frequency, low cost, surface mount
devices are well suited for portable wireless communications
and cellular radio applications.
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
The NE685 series of high f
T
(12 GHz) devices is suitable for
very low voltage/low current, low noise applications. These
products are ideal for applications up to 2.4 GHz where low
cost, high gain, low voltage, and low current are prime con-
cerns.
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
(T
A
= 25°C)
EIAJ
2
REGISTERED
PART NUMBER
1
NUMBER
PACKAGE OUTLINE
NE68518
2SC5015
18
NE68519
2SC5010
19
NE68530
2SC4959
30
NE68533
2SC4955
33
NE68539/39R
2SC4957
39
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
f
T
Gain Bandwidth Product at
V
CE
= 3V, I
C
= 10 mA, f = 2.0 GHz
Minimum Noise Figure at
V
CE
= 3 V, I
C
= 3 mA, f = 2.0 GHz
Associated Gain at
V
CE
= 3V, I
C
= 3 mA, f = 2.0 GHz
Maximum Available Gain at
V
CE
= 3 V, I
C
= 10 mA, f = 2.0 GHz
Insertion Power Gain at
V
CE
= 3V, I
C
=10 mA, f = 2.0 GHz
Forward Current Gain
3
at
V
CE
= 3 V, I
C
= 10 mA
Collector Cutoff Current
at V
CB
= 5 V, I
E
= 0 mA
Emitter Cutoff Current
at V
EB
= 1 V, I
C
= 0 mA
Feedback Capacitance at
V
CB
= 3 V, I
E
= 0 mA, f = 1 MHz
Total Power Dissipation
Thermal Resistance
(Junction to Ambient)
GHz
dB
12
12
12
12
12
NF
MIN
G
NF
1.5
2.5
1.5
2.5
1.5
7
2.5
1.5
7
2.5
1.5
2.5
dB
8.5
12
7.5
11
7.5
11
MAG
|S
21E
|
2
h
FE
I
CBO
I
EBO
C
RE4
P
T
R
TH(J-A)
R
TH(J-C)
dB
dB
9
10
7
75
8.5
110 150
0.1
0.1
0.4
0.7
150
833
200
7
75
10.5
8
110 150
0.1
0.1
0.4
0.7
180
620
200
9
75
11
7
75
9
110 150
0.1
0.1
0.4
0.7
125
1000
200
10
110 150
0.1
0.1
0.3
0.5
180
620
200
75 110 150
μA
μA
pF
mW
°C/W
0.3
0.1
0.1
0.5
150
833
200
Thermal Resistance(Junction to Case)
°C/W
Notes: 1. Precaution: Devices are ESD sensitive. Use proper handling procedures.
2. Electronic Industrial Association of Japan.
3. Pulsed measurement, PW≤350
μs,
duty cycle
≤2%.
4. The emitter terminal should be connected to the ground terminal
of the 3 terminal capacitance bridge.
California Eastern Laboratories
NE685 SERIES
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
T
J
T
STG
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Junction Temperature
Storage Temperature
UNITS
V
V
V
mA
°C
°C
RATINGS
9
6
2.0
30
150
-65 to +150
NE68530
TYPICAL NOISE PARAMETERS
(TA = 25˚C)
FREQ.
(MHz)
NF
OPT
(dB)
G
A
(dB)
Γ
OPT
MAG
ANG
Rn/50
V
CE =
0.5 V
,
I
C =
0.5 mA
500
0.95
10.87
800
1.05
7.82
1000
1.20
6.92
V
CE =
0.75 V
,
I
C =
0.5 mA
500
800
1000
0.97
1.15
1.25
11.28
8.64
7.62
0.81
0.75
0.72
0.82
0.76
0.73
0.85
0.80
0.75
0.78
0.76
0.69
0.77
0.73
0.67
0.75
0.71
0.66
0.60
0.57
0.54
0.43
0.85
0.81
0.78
0.73
0.72
0.69
0.54
0.65
0.60
0.58
0.48
0.65
0.61
0.60
0.50
0.32
15
24
34
14
24
33
13
25
36
12
22
32
11
21
30
13
21
29
10
18
25
27
14
22
30
12
19
27
33
11
17
23
20
10
14
23
20
28
1.20
1.02
0.86
1.15
1.00
0.84
1.69
1.65
1.64
1.02
0.99
0.86
0.92
0.84
0.69
0.82
0.76
0.62
0.52
0.50
0.47
0.38
1.49
1.45
1.37
0.91
0.75
0.68
0.47
0.60
0.53
0.49
0.41
0.58
0.50
0.49
0.42
0.22
Note: 1.Operation in excess of any one of these parameters may
result in permanent damage.
NE68518
TYPICAL NOISE PARAMETERS
(TA = 25˚C)
FREQ.
(MHz)
NF
OPT
(dB)
G
A
(dB)
Γ
OPT
MAG
ANG
Rn/50
V
CE =
1.0 V
,
I
C =
0.25 mA
500
1.10
8.73
800
1.20
6.83
1000
1.45
6.67
V
CE =
1.0 V
,
I
C =
0.5 mA
500
0.95
11.93
800
1.12
8.71
1000
1.28
8.35
V
CE =
1.0 V
,
I
C =
0.75 mA
500
0.90
12.92
800
1.02
10.03
1000
1.18
9.23
V
CE =
1.0 V
,
I
C =
1.0 mA
500
0.88
800
1.00
1000
1.14
V
CE =
1.0 V
,
I
C =
3.0 mA
500
0.98
800
1.07
1000
1.15
2000
1.52
V
CE =
2.5 V
,
I
C =
0.3 mA
500
1.10
800
1.30
1000
1.47
V
CE =
2.5 V
,
I
C =
1 mA
500
0.85
800
1.04
1000
1.16
2000
1.60
V
CE =
2.5 V
,
I
C =
3 mA
500
1.08
800
1.15
1000
1.22
2000
1.68
V
CE =
3 V
,
I
C =
3 mA
500
800
1000
2000
3000
1.10
1.19
1.25
1.48
1.74
14.48
10.96
9.83
17.29
13.62
12.01
6.41
10.77
7.48
6.76
15.44
11.52
10.45
5.16
18.11
14.37
12.76
7.19
18.10
14.27
12.77
7.20
5.22
V
CE =
3 V
,
I
C =
3 mA
500
1.00
800
1.15
1000
1.20
1500
1.35
2000
1.50
2500
1.65
V
CE =
3 V
,
I
C =
5 mA
500
1.20
800
1.25
1000
1.35
1500
1.45
2000
1.60
2500
1.75
V
CE =
3 V
,
I
C =
10 mA
500
800
1000
1500
2000
2500
1.55
1.60
1.65
1.80
1.90
2.00
21.32
16.29
14.66
11.02
8.67
7.24
21.15
17.29
15.47
11.87
9.57
7.90
21.70
18.13
16.20
12.85
10.60
8.82
0.63
0.59
0.56
0.52
0.47
0.40
0.55
0.51
0.49
0.46
0.42
0.36
0.44
0.40
0.38
0.34
0.30
0.27
26
31
39
48
53
65
19
31
37
44
53
60
15
30
36
44
50
55
0.56
0.44
0.40
0.37
0.33
0.23
0.47
0.42
0.38
0.35
0.33
0.22
0.44
0.41
0.39
0.37
0.34
0.23
NE68519
TYPICAL NOISE PARAMETERS
(TA = 25˚C)
FREQ.
(MHz)
NF
OPT
(dB)
G
A
(dB)
Γ
OPT
MAG
ANG
Rn/50
V
CE =
2.5 V
,
I
C =
0.3 mA
500
1.07
12.6
800
1.25
8.6
1000
1.55
6.7
V
CE =
2.5 V
,
I
C =
1.0 mA
500
0.87
800
0.99
1000
1.08
1500
1.31
2000
1.65
V
CE =
3 V
,
I
C =
10 mA
500
1.05
800
1.12
1000
1.17
1500
1.31
2000
1.51
2500
1.75
V
CE =
3 V
,
I
C =
5.0 mA
500
800
1000
1500
2000
2500
1.33
1.40
1.45
1.57
1.71
1.90
16.9
12.8
11.0
7.5
5.0
19.3
15.8
13.4
9.9
7.5
5.5
19.4
15.3
13.5
10.0
7.5
5.6
0.80
0.79
0.75
0.73
0.67
0.64
0.60
0.54
0.65
0.58
0.55
0.50
0.43
0.32
0.58
0.52
0.50
0.43
0.36
0.29
17
32
42
14
27
36
52
65
14
27
33
47
58
69
13
26
33
46
54
60
1.70
1.55
1.41
0.80
0.65
0.62
0.52
0.42
0.57
0.50
0.45
0.38
0.32
0.21
0.54
0.49
0.46
0.42
0.38
0.31
NE685 SERIES
TYPICAL PERFORMANCE CURVES
(TA = 25°C)
NE68518, NE68530
D.C. POWER DERATING CURVE
NE68519
D.C. POWER DERATING CURVE
Total Power Dissipation, P
T
(mW)
200
180
INFINITE
HEAT SINK
Total Power Dissipation, P
T
(mW)
200
180
150
125
100
FREE AIR
50
INFINITE
HEAT SINK
FREE AIR
100
0
0
50
100
114
150
0
0
50
100
114
150
Ambient Temperature, T
A
(C°)
Ambient Temperature, T
A
(C°)
NE68533, NE68539
D.C. POWER DERATING CURVE
12
INSERTION GAIN vs.
COLLECTOR CURRENT
V
CE
= 3 V
f = 2 GHz
Total Power Dissipation, P
T
(mW)
Insertion Gain, |S21
E
|
2
(dB)
200
180
INFINITE
HEAT SINK
10
8
6
FREE AIR
100
4
2
0
38.4
0
50
100
114
150
0
1
2
5
10
20
50
Ambient Temperature, T
A
(°C)
Collector Current, I
C
(mA)
NOISE FIGURE
vs. COLLECTOR CURRENT
5
V
CE
= 3 V
f = 2 GHz
4
50
FORWARD INSERTION GAIN
AND MAXIMUM AVAILABLE GAIN
vs. FREQUENCY
Insertion Gain, |S21
E
|
2
(dB)
Maximum Available Gain, MAG (dB)
V
CE
= 3 V
I
C
= 10 mA
40
Noise Figure, N
F
(dB)
3
30
2
20
MAG
1
10
|S
21E
|
2
0
1
2
5
10
20
50
0
0.1
0.2
0.5
1.0
2.0
5.0
Collector Current, I
C
(mA)
Frequency, f (GHz)
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
