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IDT70T3319S166BCI: 产品描述Dual-Port SRAM, 256KX18, 12ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256; 产品类别存储存储; 文件大小472KB，共28页; 制造商IDT (Integrated Device Technology)

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IDT70T3319S166BCI概述

Dual-Port SRAM, 256KX18, 12ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256

IDT70T3319S166BCI规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	IDT (Integrated Device Technology)
零件包装代码	BGA
包装说明	LBGA, BGA256,16X16,40
针数	256
Reach Compliance Code	not_compliant
ECCN代码	3A991.B.2.A
最长访问时间	12 ns
其他特性	FLOW-THROUGH OR PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)	166 MHz
I/O 类型	COMMON
JESD-30 代码	S-PBGA-B256
JESD-609代码	e0
长度	17 mm
内存密度	4718592 bit
内存集成电路类型	DUAL-PORT SRAM
内存宽度	18
湿度敏感等级	3
功能数量	1
端口数量	2
端子数量	256
字数	262144 words
字数代码	256000
工作模式	SYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	256KX18
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	LBGA
封装等效代码	BGA256,16X16,40
封装形状	SQUARE
封装形式	GRID ARRAY, LOW PROFILE
并行/串行	PARALLEL
峰值回流温度（摄氏度）	225
电源	2.5,2.5/3.3 V
认证状态	Not Qualified
座面最大高度	1.5 mm
最大待机电流	0.02 A
最小待机电流	2.4 V
最大压摆率	0.51 mA
最大供电电压 (Vsup)	2.6 V
最小供电电压 (Vsup)	2.4 V
标称供电电压 (Vsup)	2.5 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	Tin/Lead (Sn63Pb37)
端子形式	BALL
端子节距	1 mm
端子位置	BOTTOM
处于峰值回流温度下的最长时间	20
宽度	17 mm

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HIGH-SPEED 2.5V

PRELIMINARY

512/256/128K X 18

IDT70T3339/19/99S

SYNCHRONOUS

DUAL-PORT STATIC RAM

WITH 3.3V OR 2.5V INTERFACE

Features:

◆

True Dual-Port memory cells which allow simultaneous

access of the same memory location

High-speed data access

– Commercial: 3.4 (200MHz)/3.6ns (166MHz)/

4.2ns (133MHz)(max.)

– Industrial: 3.6ns (166MHz)/4.2ns (133MHz) (max.)

Selectable Pipelined or Flow-Through output mode

Counter enable and repeat features

Dual chip enables allow for depth expansion without

additional logic

Interrupt and Collision Detection Flags

Full synchronous operation on both ports

– 5ns cycle time, 200MHz operation (14Gbps bandwidth)

– Fast 3.4ns clock to data out

– 1.5ns setup to clock and 0.5ns hold on all control, data, and

address inputs @ 200MHz

◆

– Data input, address, byte enable and control registers

– Self-timed write allows fast cycle time

Separate byte controls for multiplexed bus and bus

matching compatibility

Dual Cycle Deselect (DCD) for Pipelined Output Mode

2.5V (±100mV) power supply for core

LVTTL compatible, selectable 3.3V (±150mV) or 2.5V

(±100mV) power supply for I/Os and control signals on

each port

Industrial temperature range (-40°C to +85°C) is

available at 166MHz and 133MHz

Available in a 256-pin Ball Grid Array (BGA), a 144-pin Thin

Quad Flatpack (TQFP) and 208-pin fine pitch Ball Grid Array

(fpBGA)

Supports JTAG features compliant with IEEE 1149.1

Due to limited pin count JTAG, Collision Detection and

Interrupt are not supported on the 144-pin TQFP package

Functional Block Diagram

FT/PIPE

1/0

0a 1a

0b 1b

1b 0b

1a 0a

1/0

/PIPE

R/W

1/0

B B

0 1

L L

B B

1 0

R R

1/0

Dout0-8_L

Dout9-17_L

Dout0-8_R

Dout9-17_R

1b 0b 1a 0a

FT/PIPE

0/1

0a 1a 0b

0/1

/PIPE

512/256/128K x 18

MEMORY

ARRAY

I/O

- I/O

17L

Din_L

Din_R

I/O

- I/O

17R

CLK

18L(1)

REPEAT

ADS

CNTEN

18R(1)

CLK

Counter/

Address

Reg.

ADDR_L

ADDR_R

Counter/

Address

Reg.

REPEAT

ADS

CNTEN

TDI

TCK

TMS

TRST

0 L

CE1L

INTERRUPT

COLLISION

DETECTION

LOGIC

0 R

CE1 R

JTAG

TDO

COL

INT

COL

INT

(2)

CONTROL

LOGIC

(2)

5652 drw 01

NOTES:

1. Address A

is a NC for the IDT70T3319. Also, Addresses A

and A

are NC's for the IDT70T3399.

2. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when asserted. All static inputs, i.e., PL/FTx and

OPTx and the sleep mode pins themselves (ZZx) are not affected during sleep mode.

NOVEMBER 2003

DSC-5652/3

IDT70T3319S166BCI相似产品对比

	IDT70T3319S166BCI	IDT70T3399S166DDI	IDT70T3319S166DDI	IDT70T3339S133BFI	IDT70T3339S166BCI	IDT70T3399S166BCI	IDT70T3339S133DDI	IDT70T3339S133DD	IDT70T3339S166DD
描述	Dual-Port SRAM, 256KX18, 12ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256	Dual-Port SRAM, 128KX18, 12ns, CMOS, PQFP144, 20 X 20 MM, 1.40 MM HEIGHT, TQFP-144	Dual-Port SRAM, 256KX18, 12ns, CMOS, PQFP144, 20 X 20 MM, 1.40 MM HEIGHT, TQFP-144	Dual-Port SRAM, 512KX18, 15ns, CMOS, PBGA208, 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, FPBGA-208	Dual-Port SRAM, 512KX18, 12ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256	Dual-Port SRAM, 128KX18, 12ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256	Dual-Port SRAM, 512KX18, 15ns, CMOS, PQFP144, 20 X 20 MM, 1.40 MM HEIGHT, TQFP-144	Dual-Port SRAM, 512KX18, 15ns, CMOS, PQFP144, 20 X 20 MM, 1.40 MM HEIGHT, TQFP-144	Dual-Port SRAM, 512KX18, 12ns, CMOS, PQFP144, 20 X 20 MM, 1.40 MM HEIGHT, TQFP-144
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
零件包装代码	BGA	QFP	QFP	BGA	BGA	BGA	QFP	QFP	QFP
包装说明	LBGA, BGA256,16X16,40	20 X 20 MM, 1.40 MM HEIGHT, TQFP-144	20 X 20 MM, 1.40 MM HEIGHT, TQFP-144	TFBGA, BGA208,17X17,32	LBGA, BGA256,16X16,40	LBGA, BGA256,16X16,40	20 X 20 MM, 1.40 MM HEIGHT, TQFP-144	20 X 20 MM, 1.40 MM HEIGHT, TQFP-144	20 X 20 MM, 1.40 MM HEIGHT, TQFP-144
针数	256	144	144	208	256	256	144	144	144
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
ECCN代码	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
最长访问时间	12 ns	12 ns	12 ns	15 ns	12 ns	12 ns	15 ns	15 ns	12 ns
其他特性	FLOW-THROUGH OR PIPELINED ARCHITECTURE	FLOW-THROUGH OR PIPELINED ARCHITECTURE	FLOW-THROUGH OR PIPELINED ARCHITECTURE	FLOW-THROUGH OR PIPELINED ARCHITECTURE	FLOW-THROUGH OR PIPELINED ARCHITECTURE	FLOW-THROUGH OR PIPELINED ARCHITECTURE	FLOW-THROUGH OR PIPELINED ARCHITECTURE	FLOW-THROUGH OR PIPELINED ARCHITECTURE	FLOW-THROUGH OR PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)	166 MHz	166 MHz	166 MHz	133 MHz	166 MHz	166 MHz	133 MHz	133 MHz	166 MHz
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	S-PBGA-B256	S-PQFP-G144	S-PQFP-G144	S-PBGA-B208	S-PBGA-B256	S-PBGA-B256	S-PQFP-G144	S-PQFP-G144	S-PQFP-G144
JESD-609代码	e0	e0	e0	e0	e0	e0	e0	e0	e0
长度	17 mm	20 mm	20 mm	15 mm	17 mm	17 mm	20 mm	20 mm	20 mm
内存密度	4718592 bit	2359296 bit	4718592 bit	9437184 bit	9437184 bit	2359296 bit	9437184 bit	9437184 bit	9437184 bit
内存集成电路类型	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM
内存宽度	18	18	18	18	18	18	18	18	18
湿度敏感等级	3	4	4	3	3	3	4	4	4
功能数量	1	1	1	1	1	1	1	1	1
端口数量	2	2	2	2	2	2	2	2	2
端子数量	256	144	144	208	256	256	144	144	144
字数	262144 words	131072 words	262144 words	524288 words	524288 words	131072 words	524288 words	524288 words	524288 words
字数代码	256000	128000	256000	512000	512000	128000	512000	512000	512000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	70 °C	70 °C
最低工作温度	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-	-
组织	256KX18	128KX18	256KX18	512KX18	512KX18	128KX18	512KX18	512KX18	512KX18
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	LBGA	LFQFP	LFQFP	TFBGA	LBGA	LBGA	LFQFP	LFQFP	LFQFP
封装等效代码	BGA256,16X16,40	QFP144,.87SQ,20	QFP144,.87SQ,20	BGA208,17X17,32	BGA256,16X16,40	BGA256,16X16,40	QFP144,.87SQ,20	QFP144,.87SQ,20	QFP144,.87SQ,20
封装形状	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
封装形式	GRID ARRAY, LOW PROFILE	FLATPACK, LOW PROFILE, FINE PITCH	FLATPACK, LOW PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	FLATPACK, LOW PROFILE, FINE PITCH	FLATPACK, LOW PROFILE, FINE PITCH	FLATPACK, LOW PROFILE, FINE PITCH
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	225	225	225	225	225	225	225	225	225
电源	2.5,2.5/3.3 V	2.5,2.5/3.3 V	2.5,2.5/3.3 V	2.5,2.5/3.3 V	2.5,2.5/3.3 V	2.5,2.5/3.3 V	2.5,2.5/3.3 V	2.5,2.5/3.3 V	2.5,2.5/3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.5 mm	1.6 mm	1.6 mm	1.2 mm	1.5 mm	1.5 mm	1.6 mm	1.6 mm	1.6 mm
最大待机电流	0.02 A	0.02 A	0.02 A	0.02 A	0.02 A	0.02 A	0.02 A	0.015 A	0.015 A
最小待机电流	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V
最大压摆率	0.51 mA	0.51 mA	0.51 mA	0.45 mA	0.51 mA	0.51 mA	0.45 mA	0.37 mA	0.45 mA
最大供电电压 (Vsup)	2.6 V	2.6 V	2.6 V	2.6 V	2.6 V	2.6 V	2.6 V	2.6 V	2.6 V
最小供电电压 (Vsup)	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V	2.4 V
标称供电电压 (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL
端子面层	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn63Pb37)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)
端子形式	BALL	GULL WING	GULL WING	BALL	BALL	BALL	GULL WING	GULL WING	GULL WING
端子节距	1 mm	0.5 mm	0.5 mm	0.8 mm	1 mm	1 mm	0.5 mm	0.5 mm	0.5 mm
端子位置	BOTTOM	QUAD	QUAD	BOTTOM	BOTTOM	BOTTOM	QUAD	QUAD	QUAD
处于峰值回流温度下的最长时间	20	20	20	20	20	20	30	30	30
宽度	17 mm	20 mm	20 mm	15 mm	17 mm	17 mm	20 mm	20 mm	20 mm
是否无铅	含铅	含铅	含铅	含铅	含铅	含铅	-	-	-
厂商名称	IDT (Integrated Device Technology)	-	-	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
Base Number Matches	-	1	1	1	1	1	-	-	-

IDT70T3319S166BCI

IDT70T3319S166BCI概述

IDT70T3319S166BCI规格参数

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IDT70T3319S166BCI相似产品对比

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