Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, NPN, Silicon, TO-126
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
厂商名称 | SAMSUNG(三星) |
包装说明 | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code | unknown |
外壳连接 | ISOLATED |
最大集电极电流 (IC) | 0.5 A |
配置 | SINGLE |
最小直流电流增益 (hFE) | 20 |
JEDEC-95代码 | TO-126 |
JESD-30 代码 | R-PSFM-T3 |
JESD-609代码 | e0 |
元件数量 | 1 |
端子数量 | 3 |
最高工作温度 | 150 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | FLANGE MOUNT |
峰值回流温度(摄氏度) | NOT SPECIFIED |
极性/信道类型 | NPN |
最大功率耗散 (Abs) | 10 W |
认证状态 | Not Qualified |
表面贴装 | NO |
端子面层 | Tin/Lead (Sn/Pb) |
端子形式 | THROUGH-HOLE |
端子位置 | SINGLE |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
KSC2752 | KSC2752-Y | KSC2752-R | KSC2752-O | |
---|---|---|---|---|
描述 | Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, NPN, Silicon, TO-126 | Small Signal Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-126 | Small Signal Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-126 | Small Signal Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-126 |
厂商名称 | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) |
包装说明 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code | unknown | unknown | unknown | unknown |
外壳连接 | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
最大集电极电流 (IC) | 0.5 A | 0.5 A | 0.5 A | 0.5 A |
配置 | SINGLE | SINGLE | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 20 | 40 | 20 | 30 |
JEDEC-95代码 | TO-126 | TO-126 | TO-126 | TO-126 |
JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
元件数量 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 |
最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
极性/信道类型 | NPN | NPN | NPN | NPN |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | NO | NO |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | SINGLE | SINGLE | SINGLE | SINGLE |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
ECCN代码 | - | EAR99 | EAR99 | EAR99 |
集电极-发射极最大电压 | - | 400 V | 400 V | 400 V |
功耗环境最大值 | - | 10 W | 10 W | 10 W |
最大关闭时间(toff) | - | 3500 ns | 3500 ns | 3500 ns |
最大开启时间(吨) | - | 1000 ns | 1000 ns | 1000 ns |
VCEsat-Max | - | 1 V | 1 V | 1 V |
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