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USB50812C-AE3

产品描述500 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
产品类别半导体    分立半导体   
文件大小77KB,共2页
制造商Microsemi
官网地址https://www.microsemi.com
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USB50812C-AE3概述

500 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE

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USB50803C-A thru USB50824C-A, e3
Bidirectional Low Capacitance TVSarray ™
SCOTTSDALE DIVISION
DESCRIPTION
This Transient Voltage Suppressor (TVS) array is packaged in an SO-8 configuration
giving protection to 2 Bidirectional data or interface lines. It is designed for use in
applications where very low capacitance protection is required at the board level from
voltage transients caused by electrostatic discharge (ESD) as defined in IEC 61000-4-
2, electrical fast transients (EFT) per IEC 61000-4-4 and effects of secondary lightning.
It is also available with either Tin-Lead plated terminations or as RoHS Compliant with
annealed matte-Tin finish by adding an “e3” suffix to the part number*.
Using the schematic on the second page, pins 1 & 2 are tied together for the first
protected line, and pins 7 & 8 are tied together to ground. The same would occur for a
second protected line where pins 3 & 4 tied together and pins 5 & 6 tied together to the
ground. These may also be switched in polarity connections since the electrical
features are the same in each antiparallel (opposite facing) leg when the pins are tied
together in this manner for bidirectional protection. This device with an “A” suffix is
opposite in polarity for each pin-to-pin leg to the USB50803C series (see schematic).
This provides no functional difference for bidirectional TVS protection with the noted
pins tied together as described above.
These TVS arrays have a peak power rating of 500 watts for an 8/20
μsec
pulse.
This array is suitable for protection of sensitive circuitry consisting of TTL, CMOS
DRAM’s, SRAM’s, HCMOS, HSIC microprocessors,
UNIVERSAL SERIAL BUS
(USB)
and I/O transceivers. The USB508XXC product provides board level protection
from static electricity and other induced voltage surges that can damage or upset
sensitive circuitry.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
SO–8
FEATURES
Protects up to 2 bidirectional lines
Surge protection per IEC 61000-4-2, IEC 61000-4-4
Provides electrically isolated protection
UL 94V-0 Flamability Classification
RoHS Compliant devices available by adding “e3” suffix
ULTRA LOW CAPACITANCE 3 pF per line pair
ULTRA LOW LEAKAGE
APPLICATIONS / BENEFITS
EIA-RS485 data rates:
5 Mbs
10 Base T Ethernet
USB date rate: 900 Mbs
Tape & Reel per EIA Standard 481
13 inch reel; 2,500 pieces (OPTIONAL)
Carrier tubes; 95 pcs (STANDARD)
MAXIMUM RATINGS
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Peak Pulse Power: 500 watts (8/20 µs, Figure 1)
Pulse Repetition Rate: < .01%
Solder Temperatures: 260°C for 10 s (maximum)
MECHANICAL AND PACKAGING
Molded SO-8 Surface Mount
Weight 0.066 grams (approximate)
Marking: Logo, device marking code*, date code
Pin #1 defined by dot on top of package
ELECTRICAL CHARACTERISTICS
DEVICE
MARKING
*
STANDOFF
VOLTAGE
V
WM
VOLTS
MAX
USB50803C-A
USB50805C-A
USB50812C-A
USB50815C-A
USB50824C-A
U3CA
U5CA
U12CA
U15CA
U24CA
3.3
5.0
12.0
15.0
24.0
BREAKDOWN
VOLTAGE
V
BR
@1 mA
VOLTS
MIN
4
6.0
13.3
16.7
26.7
CLAMPING
VOLTAGE
V
C
@ 1 Amp
(Figure 2)
VOLTS
MAX
8
10.8
19
24
43
CLAMPING
VOLTAGE
V
C
@ 5 Amp
(Figure 2)
VOLTS
MAX
11
13
26
32
57
STANDBY
CURRENT
I
D
@ V
WM
µA
MAX
200
40
1
1
1
CAPACITANCE
(f=1 MHz)
C
@0V
pF
MAX
3
3
3
3
3
TEMPERATURE
COEFFICIENT
OF V
BR
α
VBR
mV/°C
MAX
-5
1
8
11
28
USB508xxC-A
PART
NUMBER
*Device
marking has an e3 suffix added for the RoHS Compliant option, e.g. U3CAe3, U5CAe3, U12CAe3, U15CAe3, and U24CAe3.
Copyright
©
2006
8-01-2006 REV 0
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1

USB50812C-AE3相似产品对比

USB50812C-AE3 USB50803C-A USB50812C-A USB50805C-AE3 USB50824C-A USB50815C-AE3 USB50824C-AE3 USB50803C-AE3 USB50805C-A USB50815C-A
描述 500 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE 500 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE 500 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE 500 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE 500 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE 500 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE 500 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE 500 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE 500 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE 500 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
是否Rohs认证 - 不符合 - 符合 不符合 符合 符合 符合 不符合 不符合
厂商名称 - Microsemi - Microsemi Microsemi Microsemi Microsemi Microsemi - Microsemi
包装说明 - PLASTIC, SOP-8 - R-PDSO-G8 PLASTIC, SOP-8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 PLASTIC, SOP-8 R-PDSO-G8
Reach Compliance Code - unknow - compli unknow compli compli compli compli unknow
ECCN代码 - EAR99 - EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 - ULTRA LOW CAPACITANCE - ULTRA LOW CAPACITANCE ULTRA LOW CAPACITANCE ULTRA LOW CAPACITANCE ULTRA LOW CAPACITANCE ULTRA LOW CAPACITANCE ULTRA LOW CAPACITANCE ULTRA LOW CAPACITANCE
最小击穿电压 - 4 V - 6 V 26.7 V 16.7 V 26.7 V 4 V 6 V 16.7 V
配置 - SEPARATE, 4 ELEMENTS - SEPARATE, 4 ELEMENTS SEPARATE, 4 ELEMENTS SEPARATE, 4 ELEMENTS SEPARATE, 4 ELEMENTS SEPARATE, 4 ELEMENTS SEPARATE, 4 ELEMENTS SEPARATE, 4 ELEMENTS
二极管元件材料 - SILICON - SILICON SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 - TRANS VOLTAGE SUPPRESSOR DIODE - TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码 - R-PDSO-G8 - R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8
JESD-609代码 - e0 - e3 e0 e3 e3 e3 e0 e0
最大非重复峰值反向功率耗散 - 500 W - 500 W 500 W 500 W 500 W 500 W 500 W 500 W
元件数量 - 4 - 4 4 4 4 4 4 4
端子数量 - 8 - 8 8 8 8 8 8 8
最高工作温度 - 150 °C - 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
最低工作温度 - -55 °C - -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
封装主体材料 - PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 - RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 - SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) - NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
极性 - BIDIRECTIONAL - BIDIRECTIONAL BIDIRECTIONAL BIDIRECTIONAL BIDIRECTIONAL BIDIRECTIONAL BIDIRECTIONAL BIDIRECTIONAL
最大重复峰值反向电压 - 3.3 V - 5 V 24 V 15 V 24 V 3.3 V 5 V 15 V
表面贴装 - YES - YES YES YES YES YES YES YES
技术 - AVALANCHE - AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
端子面层 - TIN LEAD - Matte Tin (Sn) TIN LEAD Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) TIN LEAD TIN LEAD
端子形式 - GULL WING - GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 - DUAL - DUAL DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 - NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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