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◇ STRUCTURE
◇ PRODUCT
◇
Silicon Monolithic Integrated Circuit
SPI BUS 32Kbit (4,096×8bit) EEPROM
PART NUMBER
BR35H320-WC series
PACKAGE
SOP8
SOP-J8
TSSOP-B8
MSOP8
PART NUMBER
BR35H320F-WC
BR35H320FJ-WC
BR35H320FVT-WC
BR35H320FVM-WC
◇ FEATURES
Serial Peripheral Interface
Single power supply (2.5V½5.5V)
1,000,000 erase/write cycles endurance (85℃)
500,000 erase/write cycles endurance (105℃)
300,000 erase/write cycles endurance (125℃)
◇ ABSOLUTE MAXIMUM RATING (Ta=25℃)
Parameter
Symbol
Supply Voltage
Vcc
Rating
Unit
-0.3½6.5
V
560 (BR35H320F-WC) *1
560 (BR35H320FJ-WC) *2
Power Dissipation
Pd
mW
410 (BR35H320FVT-WC)
*3
380 (BR35H320FVM-WC)
*4
Storage Temperature
Tstg
-65½150
℃
Operating Temperature
Topr
-40½125
℃
Terminal Voltage
－
-0.3½Vcc+0.3
V
* Degradation is done at 4.5mW/℃(※1,2), 3.3mW/℃(※3), 3.1mW/℃(※4) for operation above 25℃
◇ RECOMMENDED OPERATING CONDITION
Parameter
Symbol
Rating
2.5½5.5
Supply Voltage
Vcc
Input Voltage
0½Vcc
VIN
Unit
V
V
REV. B
2/4
◇MEMORY CELL CHARACTERISTICS(Vcc=2.5½5.5V)
Parameter
Specification
Min.
1,000,000
Write/Erase Cycle
*1
500,000
300,000
Data Retention
*1
40
20
Typ.
-
-
-
-
-
Max.
-
-
-
-
-
Unit
Cycle
Cycle
Cycle
Year
Year
Test
Condition
Ta≦85℃
Ta≦105℃
Ta≦125℃
Ta≦25℃
Ta≦125℃
○Initial Data：Memory array FFh
*1 Not 100% TESTED
◇DC OPERATING CHARACTERISTICS
(Unless otherwise specified Ta=-40½125℃, Vcc=2.5½5.5V)
Parameter
“H” Input Voltage
“L” Input Voltage
“L” Output Voltage
“H” Output Voltage
Input Leakage Current
Output Leakage Current
◇AC OPERATING CHARACTERISTICS
(Unless otherwise specified Ta=-40½125℃, C
L
=100pF)
test condition
Parameter
SCK clock Frequency
SCK High Time
SCK Low Time
CS High Time
CS Setup Time
CS Hold Time
SCK Setup Time
SCK Hold Time
SI Setup Time
SI Hold Time
Output Data Delay Time1
Output Data Delay Time2 (CL=30pF)
Symbol
VIH1
VIL1
VOL
VOH
ILI
ILO
ICC1
Specification
Min.
Typ.
Max.
0.7xVcc
Unit
V
V
V
V
Symbol
fSCK
tSCKWH
tSCKWL
tCS
tCSS
tCSH
tSCKS
tSCKH
tDIS
tDIH
tPD1
tPD2
tOH
tOZ
*1
*1
*1
*1
tRC
tFC
tRO
tFO
tE/W
2.5V≦VCC≦5.5V
Min.
－
85
85
85
90
85
90
90
20
30
-
-
0
-
－
－
－
－
－
Typ.
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
Max.
5
－
－
－
－
－
－
－
－
－
70
55
－
100
1
1
50
50
5
Unit
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
μs
ns
ns
ms
－
－
－
－
－
－
－
－
－
－
Vcc+0.3
2.5V≦Vcc≦5.5V
2.5V≦Vcc≦5.5V
IOL=2.1mA (Vcc=2.5V½5.5V)
IOH=-0.4mA (Vcc=2.5V½5.5V)
-0.3
0
Vcc-0.5
0.3xVcc
0.4
Vcc
10
10
2
3
1.5
2
-10
-10
－
－
－
－
μA VIN=0V½Vcc
μA VOUT=0V½Vcc , CSB=Vcc
mA
mA
mA
mA
Vcc=2.5V , fSCK=5MHz , tE/W=5ms
Byte Write，Page Write
Vcc=5.5V , fSCK=5MHz , tE/W=5ms
Byte Write，Page Write
Vcc=2.5V , fSCK=5MHz
Read，Read Status Register
Vcc=5.5V , fSCK=5MHz
Read，Read Status Register
Vcc=5.5V
Operating Current
Write
ICC2
ICC3
Operating Current
Read
ICC4
Output Hold Time
Output Disable Time
SCK Rise Time
SCK Fall Time
Output Rise Time
Output Fall Time
Write Cycle Time
Standby Current
ISB
－
－
10
μA CSB=Vcc
SCK=SI=Vcc or GND, SO=OPEN
○This product is not designed for protection against
○radioactive
rays.
※1 Not 100% TESTED
◇ BLOCK DIAGRAM
◇PIN No. / PIN NAME
PIN No.
1
2
3
4
5
6
7
8
PIN NAME
CSB
SO
NC
GND
SI
SCK
NC
VCC
CSB
1
INSTRUCTION DECODE
CONTROL CLOCK
GENERATION
WRITE
VOLTAGE
DETECTION
8 VCC
HIGH VOLTAGE
GENERATOR
SO
2
INSTRUCTION
REGISTER
INHIBITION
7 NC
STATUS REGISTER
NC
3
ADDRESS
REGISTER
12bit
ADDRESS
DECODER
12bit
6 SCK
32,768bit
EEPROM
DATA
READ/WRITE
8bit
GND
4
REGISTER
AMP
8bit
5 SI
Fig.1 BLOCK DIAGRAM
REV. B
3/4
◇NOTES FOR POWER SUPPLY
In order to prevent an inadvertent write, the device has the feature of P.O.R.
After the power is on, the device is in the write disable mode. P.O.R. works only during power up. The noise may force
the device write enable mode with CS=“H”during power ON/OFF. In the case of power up, keep the following
conditions to ensure to make the function of P.O.R.
tR
◇RECOMMENDED CONDITIONS OF tR, tOFF, Vbot
Vcc
tR
tOFF
Vbot
Below 10ms
Above 10ms
Below 0.3V
tOFF
Vbot
Below 100ms
Above 10ms
Below 0.2V
0
Fig.2
Vcc waveform
Please keep CS “H” during power ON/OFF.
The device is an active state during CS is low. The extraordinary function or data collaption may occur because of
noise etc., if power-up is done with CS “L”. In order to prevent above errors from happening, keep CS “H” (=Vcc)
during power ON. (The device does not receive any command during CS is high.)
It may continue at low Vcc by capacitance of Vcc line during power off.
Please keep CS “H” during power off because of the device may make malfunction and inadvertent write.
Ｖ½½
Ｖ½½
ＧＮＤ
Ｖ½½
ＣＳ
ＧＮＤ
Good
Bad
（Good example）
CS follows Vcc. (CS is pull up to Vcc)
（Bad example）
CS is low during power ON/OFF.
Please take more than 10ms between power ON and power OFF,
or the internal circuit is not always reset.
Fig.3 CS TIMING DURING POWER ON/OFF
◇CAUTIONS ON USE
(1) Absolute maximum ratings
If the absolute maximum ratings such as impressed voltage and operating temperature range and so forth are exceeded
LSI may be destructed. Do not impress voltage and temperature exceeding the absolute maximum ratings. In the case
of fear exceeding the absolute maximum ratings, take physical safety countermeasures such as fuses, and see to it
that conditions exceeding the absolute maximum ratings should not be impressed to LSI.
(2) GND electric potential
Set the voltage of GND terminal lowest at any action condition. Make sure that each terminal voltages is lower than
that of GND terminal.
(3) Heat design
In consideration of permissible dissipation in actual use condition, carry out heat design with sufficient margin.
(4) Terminal to terminal shortcircuit and wrong packaging
When to package LSI onto a board, pay sufficient attention to LSI direction and displacement. Wrong packaging
may destruct LSI. And in the case of shortcircuit between LSI terminals and terminals and power source, terminal
and GND owing to foreign matter, LSI may be destructed.
(5) Strong electromagnetic field
Use in a strong electromagnetic field may cause malfunction, therefore, evaluated design sufficiently.
REV. B
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◇PHYSICAL DIMENSION
5.0±0.2
MAX5.35 (include.BURR)
Product Name：BR35H320F-WC
+6゜
4゜
-4゜
Product Name：BR35H320FJ-WC
8
7
6
5
32H
6.2±0.3
4.4±0.2
0.3MIN
0.9±0.15
32H
1
0.595
2
3
4
LOT NO．
0.17
-0.05
+0.1
LOT NO．
1.5±0.1
0.11
1.27
0.42±0.1
Drawing No. : EX112-5002
(UNIT:mm)
Drawing No. : EX111-5002
(UNIT:mm)
Fig.4-(a) PHYSICAL DIMENSION SOP-8 (BR35H320F-WC)
Fig.4-(b) PHYSICAL DIMENSION SOP-J8 (BR35H320FJ-WC)
3.0±0.1
2.9±0.1
MAX3.25 (include.BURR)
Product Name： BR35H320FVT-WC
4°±4°
5
Product Name：BR35H320FVM-WC
+6゜
4゜
-4゜
MAX3.35 (include.BURR)
8
7
6
8
7
6
5
6.4±0.2
4.4±0.1
4.0±0.2
2.8±0.1
0.29±0.15
0.6±0.2
32H
3
2
Ｌ
H
0.5±0.15
1
2
3
4
0.475
1
2
3
1PIN MARK
4
LOT NO．
LOT NO．
+0.05
0.145
-0.03
0.525
1.2MAX
0.1±0.05 1.0±0.05
1PIN MARK
0.145
+0.05
-0.03
0.75±0.05
0.08±0.05
+0.05
0.22
-0.04
0.65
0.08 S
0.245
+0.05
0.08
M
-0.04
Drawing No. :165-5002
(UNIT:mm)
Drawing No. :181-5002
(UNIT:mm)
Fig.4-(c) PHYSICAL DIMENSION MSOP8（BR35H320FVM-WC）
Fig.4-(d) PHYSICAL DIMENSION TSSOP-B8（BR35H320FVT-WC）
REV. B
1.0±0.2
Notice
Notes
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Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
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Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
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The technical information specified herein is intended only to show the typical functions of and
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