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HM5225165BTT-A6

产品描述DRAM
产品类别存储    存储   
文件大小786KB,共64页
制造商Hitachi Chemical Co America Ltd
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HM5225165BTT-A6概述

DRAM

HM5225165BTT-A6规格参数

参数名称属性值
厂商名称Hitachi Chemical Co America Ltd
包装说明,
Reach Compliance Codeunknown

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HM5225165B-75/A6/B6
HM5225805B-75/A6/B6
HM5225405B-75/A6/B6
256M LVTTL interface SDRAM
133 MHz/100 MHz
4-Mword
×
16-bit
×
4-bank/8-Mword
×
8-bit
×
4-bank
/16-Mword
×
4-bit
×
4-bank
PC/133, PC/100 SDRAM
ADE-203-1073A (Z)
Preliminary
Rev. 0.1
Nov. 25, 1999
Description
The Hitachi HM5225165B is a 256-Mbit SDRAM organized as 4194304-word
×
16-bit
×
4 bank. The
Hitachi HM5225805B is a 256-Mbit SDRAM organized as 8388608-word
×
8-bit
×
4 bank. The Hitachi
HM5225405B is a 256-Mbit SDRAM organized as 16777216-word
×
4-bit
×
4 bank. All inputs and outputs
are referred to the rising edge of the clock input. It is packaged in standard 54-pin plastic TSOP II.
Features
3.3 V power supply
Clock frequency: 133 MHz/100 MHz (max)
LVTTL interface
Single pulsed
RAS
4 banks can operate simultaneously and independently
Burst read/write operation and burst read/single write operation capability
Programmable burst length: 1/2/4/8
2 variations of burst sequence
Sequential (BL = 1/2/4/8)
Interleave (BL = 1/2/4/8)
Programmable
CAS
latency: 2/3
Preliminary: The specifications of this device are subject to change without notice. Please contact your
nearest Hitachi’s Sales Dept. regarding specifications.

HM5225165BTT-A6相似产品对比

HM5225165BTT-A6 HM5225165BTT-75 HM5225805BTT-75
描述 DRAM DRAM DRAM
厂商名称 Hitachi Chemical Co America Ltd Hitachi Chemical Co America Ltd Hitachi Chemical Co America Ltd
Reach Compliance Code unknown unknown unknown

 
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