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HM5425801BTT-10: 产品描述DDR DRAM, 32MX8, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66; 产品类别存储存储; 文件大小1016KB，共62页; 制造商Hitachi （Renesas ）; 官网地址http://www.renesas.com/eng/

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HM5425801BTT-10概述

DDR DRAM, 32MX8, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66

HM5425801BTT-10规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Hitachi （Renesas ）
零件包装代码	TSOP2
包装说明	TSOP2, TSSOP66,.46
针数	66
Reach Compliance Code	unknown
ECCN代码	EAR99
访问模式	FOUR BANK PAGE BURST
最大时钟频率 (fCLK)	125 MHz
I/O 类型	COMMON
交错的突发长度	2,4,8
JESD-30 代码	R-PDSO-G66
JESD-609代码	e0
长度	22.22 mm
内存密度	268435456 bit
内存集成电路类型	DDR DRAM
内存宽度	8
功能数量	1
端口数量	1
端子数量	66
字数	33554432 words
字数代码	32000000
工作模式	SYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	32MX8
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	TSOP2
封装等效代码	TSSOP66,.46
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE
电源	2.5 V
认证状态	Not Qualified
刷新周期	8192
座面最大高度	1.2 mm
连续突发长度	2,4,8
最大供电电压 (Vsup)	2.7 V
最小供电电压 (Vsup)	2.3 V
标称供电电压 (Vsup)	2.5 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)
端子形式	GULL WING
端子节距	0.65 mm
端子位置	DUAL
宽度	10.16 mm

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HM5425161B Series

HM5425801B Series

HM5425401B Series

256M SSTL_2 interface DDR SDRAM

143 MHz/133 MHz/125 MHz/100 MHz

4-Mword

16-bit

4-bank/8-Mword

8-bit

4-bank/

16-Mword

4-bit

4-bank

ADE-203-1077 (Z)

Preliminary

Rev. 0.0

Jun. 28, 1999

Description

The HM5425161B, the HM5425801B and the HM5425401B are the Double Data Rate (DDR) SDRAM

devices. Read and write operations are performed at the cross points of the CLK and the

CLK.

This high

speed data transfer is realized by the 2-bit prefetch piplined architecture. Data strobe (DQS) both for read and

write are available for high speed and reliable data bus design. By setting extended mode resistor, the on-chip

Delay Locked Loop (DLL) can be set enable or disable.

Features

•

JEDEC standard compatible devices

2.5 V power supply

SSTL-2 interface for all inputs and outputs

Clock frequency: 143 MHz/133 Mhz/125 MHz/100 MHz

Data inputs, outputs, and DM are synchronized with DQS

4 banks can operate simultaneously and independently

Burst read/write operation

Programmable burst length: 2/4/8



Burst read stop capability

•

Programmable burst sequence



Sequential



Interleave

Preliminary: The specifications of this device are subject to change without notice. Please contact your

nearest Hitachi’s Sales Dept. regarding specifications.

HM5425801BTT-10相似产品对比

	HM5425801BTT-10	HM5425161BTT-75B	HM5425161BTT-75A	HM5425161BTT-10	HM5425401BTT-10	HM5425401BTT-75B	HM5425401BTT-75A	HM5425801BTT-75A	HM5425801BTT-75B
描述	DDR DRAM, 32MX8, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66	DDR DRAM, 16MX16, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66	DDR DRAM, 16MX16, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66	DDR DRAM, 16MX16, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66	DDR DRAM, 64MX4, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66	DDR DRAM, 64MX4, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66	DDR DRAM, 64MX4, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66	DDR DRAM, 32MX8, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66	DDR DRAM, 32MX8, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
厂商名称	Hitachi （Renesas ）	Hitachi （Renesas ）	Hitachi （Renesas ）	Hitachi （Renesas ）	Hitachi （Renesas ）	Hitachi （Renesas ）	Hitachi （Renesas ）	Hitachi （Renesas ）	Hitachi （Renesas ）
零件包装代码	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2
包装说明	TSOP2, TSSOP66,.46	TSOP2, TSSOP66,.46	TSOP2, TSSOP66,.46	TSOP2, TSSOP66,.46	TSOP2, TSSOP66,.46	TSOP2, TSSOP66,.46	TSOP2, TSSOP66,.46	TSOP2, TSSOP66,.46	TSOP2, TSSOP66,.46
针数	66	66	66	66	66	66	66	66	66
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
访问模式	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
最大时钟频率 (fCLK)	125 MHz	133 MHz	143 MHz	125 MHz	125 MHz	133 MHz	143 MHz	143 MHz	133 MHz
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
交错的突发长度	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8
JESD-30 代码	R-PDSO-G66	R-PDSO-G66	R-PDSO-G66	R-PDSO-G66	R-PDSO-G66	R-PDSO-G66	R-PDSO-G66	R-PDSO-G66	R-PDSO-G66
JESD-609代码	e0	e0	e0	e0	e0	e0	e0	e0	e0
长度	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm
内存密度	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit
内存集成电路类型	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
内存宽度	8	16	16	16	4	4	4	8	8
功能数量	1	1	1	1	1	1	1	1	1
端口数量	1	1	1	1	1	1	1	1	1
端子数量	66	66	66	66	66	66	66	66	66
字数	33554432 words	16777216 words	16777216 words	16777216 words	67108864 words	67108864 words	67108864 words	33554432 words	33554432 words
字数代码	32000000	16000000	16000000	16000000	64000000	64000000	64000000	32000000	32000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
组织	32MX8	16MX16	16MX16	16MX16	64MX4	64MX4	64MX4	32MX8	32MX8
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2
封装等效代码	TSSOP66,.46	TSSOP66,.46	TSSOP66,.46	TSSOP66,.46	TSSOP66,.46	TSSOP66,.46	TSSOP66,.46	TSSOP66,.46	TSSOP66,.46
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
电源	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
刷新周期	8192	8192	8192	8192	8192	8192	8192	8192	8192
座面最大高度	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
连续突发长度	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8
最大供电电压 (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
最小供电电压 (Vsup)	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V
标称供电电压 (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子节距	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
宽度	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm

HM5425801BTT-10

HM5425801BTT-10概述

HM5425801BTT-10规格参数

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HM5425801BTT-10相似产品对比

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