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GS840H18GB-100IT

产品描述Cache SRAM, 256KX18, 12ns, CMOS, PBGA119, BGA-119
产品类别存储    存储   
文件大小626KB,共31页
制造商GSI Technology
官网地址http://www.gsitechnology.com/
标准
下载文档 详细参数 全文预览

GS840H18GB-100IT概述

Cache SRAM, 256KX18, 12ns, CMOS, PBGA119, BGA-119

GS840H18GB-100IT规格参数

参数名称属性值
是否Rohs认证符合
厂商名称GSI Technology
零件包装代码BGA
包装说明BGA,
针数119
Reach Compliance Codeunknown
ECCN代码3A991.B.2.B
最长访问时间12 ns
其他特性FLOW-THROUGH OR PIPELINED ARCHITECTURE
JESD-30 代码R-PBGA-B119
JESD-609代码e1
长度22 mm
内存密度4718592 bit
内存集成电路类型CACHE SRAM
内存宽度18
湿度敏感等级3
功能数量1
端子数量119
字数262144 words
字数代码256000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织256KX18
封装主体材料PLASTIC/EPOXY
封装代码BGA
封装形状RECTANGULAR
封装形式GRID ARRAY
并行/串行PARALLEL
峰值回流温度(摄氏度)260
认证状态Not Qualified
座面最大高度2.4 mm
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)3.135 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层TIN SILVER COPPER
端子形式BALL
端子节距1.27 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度14 mm

文档预览

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GS840H18/32/36T/B-180/166/150/100
TQFP, BGA
Commercial Temp
Industrial Temp
Features
• FT pin for user configurable flow through or pipelined operation.
• Single Cycle Deselect (SCD) Operation.
• High Output Drive current.
• 3.3V +10%/-5% Core power supply
• 2.5V or 3.3V I/O supply.
• LBO pin for linear or interleaved burst mode.
• Internal input resistors on mode pins allow floating mode pins.
• Default to Interleaved Pipelined Mode.
• Byte write (BW) and/or global write (GW) operation.
• Common data inputs and data outputs.
• Clock Control, registered, address, data, and control.
• Internal Self-Timed Write cycle.
• Automatic power-down for portable applications.
• JEDEC standard 100-lead TQFP or 119 Bump BGA package.
-180
5.5ns
3.2ns
330mA
8ns
10ns
190mA
-166
6.0ns
3.5ns
310mA
8.5ns
10ns
190mA
-150
6.6ns
3.8ns
275mA
10ns
10ns
190mA
-100
10ns
4.5ns
190mA
12ns
15ns
140mA
256K x 18, 128K x 32, 128K x 36
4Mb Sync Burst SRAMs
Flow Through / Pipeline Reads
180Mhz - 100Mhz
3.3V VDD
3.3V & 2.5V I/O
with the Linear Burst Order (LBO) input. The Burst function need not
be used. New addresses can be loaded on every cycle with no
degradation of chip performance.
The function of the Data Output register can be controlled by the user
via the FT mode pin/bump (pin 14 in the TQFP and bump 5R in the
BGA, ). Holding the FT mode pin/bump low places the RAM in Flow
through mode, causing output data to bypass the Data Output
Register. Holding FT high places the RAM in Pipelined Mode,
activating the rising edge triggered Data Output Register.
SCD Pipelined Reads
The GS840H18/32/36 is an SCD (Single Cycle Deselect) pipelined
synchronous SRAM. DCD (Dual Cycle Deselect) versions are also
available.SCD SRAMs pipeline deselect commands one stage less
than read commands. SCD RAMs begin turning off their outputs
immediately after the deselect command has been captured in the
input registers.
Pipeline
3-1-1-1
Flow Through
2-1-1-1
tCycle
t
KQ
I
DD
t
KQ
tCycle
I
DD
Byte Write and Global Write
Byte write operation is performed by using byte write enable (BW)
input combined with one or more individual byte write signals (Bx). In
addition, Global Write (GW) is available for writing all bytes at one
time, regardless of the Byte Write control inputs.
Sleep Mode
Low power (Sleep mode) is attained through the assertion (High) of
the ZZ signal, or by stopping the clock (CK). Memory data is retained
during Sleep mode.
Functional Description
Applications
The GS840H18/32/36 is a 4,718,592 bit (4,194,304 bit for x32
version) high performance synchronous SRAM with a 2 bit burst
address counter. Although of a type originally developed for Level 2
Cache applications supporting high performance CPU’s, the device
now finds application in synchronous SRAM applications ranging from
DSP main store to networking chip set support. The GS840H18/32/36
is available in a JEDEC standard 100-lead TQFP or 119 Bump BGA
package.
Core and Interface Voltages
The GS840H18/32/36 operates on a 3.3V power supply and all
inputs/outputs are 3.3V and 2.5V compatible. Separate output power
(V
DDQ
) pins are used to de-couple output noise from the internal
circuit.
Controls
Addresses, data I/O’s, chip enables (E
1
, E
2
, E
3
), address burst control
inputs (ADSP, ADSC, ADV) and write control inputs (Bx, BW, GW) are
synchronous and are controlled by a positive edge triggered clock
input (CK). Output enable (G) and power down control (ZZ) are
asynchronous inputs. Burst cycles can be initiated with either ADSP
or ADSC inputs. In Burst mode, subsequent burst addresses are
generated internally and are controlled by ADV. The burst address
counter may be configured to count in either linear or interleave order
Rev: 2.04 6/2000
1/31
© 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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