Shantou Huashan Electronic Devices Co.,Ltd.
NPN S I L I C O N T R A N S I S T O R
HSBD237
█ APPLICATIONS
Medium Power Linear switching Applications
█
ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature…………………………
-55~150℃
T
j
——Junction
Temperature……………………………… 150℃
P
C
——Collector
Dissipation（T
c
=25℃）…………………… 25W
V
CBO
——Collector-Base
Voltage…………………………… 100V
V
CEO
——Collector-Emitter
Voltage………………………… 80V
V
CER
——Collector-Emitter
Voltage………………………… 100V
V
EBO
——Emitter-Base
Voltage………………………………… 5V
I
C
——Collector
Current Pulse）
（
…………………………………
6A
I
C
——Collector
Current（DC）……………………………… 2A
1―
Emitter, E
2―Collector，C
3―Base，B
█
ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
I
CBO
I
EBO
h
FE(1)
*h
FE(2)
*V
CE(
sat
)
*V
BE(ON)
V
CEO(SUS)
f
T
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector-Emitter Sustaining Voltage
80
3
MHz
Characteristics
Collector Cut-off Current
Emitter-Base Cut-off Current
DC Current Gain
40
25
0.6
1.3
V
V
Min
Typ
Max
100
1
Unit
μA
mA
Test Conditions
V
CB
=100V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=2V, I
C
=150mA
V
CE
=2V, I
C
=1A
Ic=1A, I
B
=0.1A
Ic=1A, V
CE
=2V
Ic=100mA,I
B
=0
Ic=250mA, V
CE
=10V
Current Gain-Bandwidth Product
*
Pulse Test:PW=350μS,Duty Cycle≤1.5% Pulsed
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