Application Specific SRAM, 128KX8, 40ns, CMOS, PZIP64
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | IDT (Integrated Device Technology) |
| Reach Compliance Code | not_compliant |
| 最长访问时间 | 40 ns |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-PZIP-T64 |
| JESD-609代码 | e0 |
| 内存密度 | 1048576 bit |
| 内存集成电路类型 | APPLICATION SPECIFIC SRAM |
| 内存宽度 | 8 |
| 端口数量 | 2 |
| 端子数量 | 64 |
| 字数 | 131072 words |
| 字数代码 | 128000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 128KX8 |
| 输出特性 | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | ZIP |
| 封装等效代码 | ZIP64/68,.1,.1 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 并行/串行 | PARALLEL |
| 峰值回流温度(摄氏度) | 225 |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 最大待机电流 | 0.125 A |
| 最小待机电流 | 4.5 V |
| 最大压摆率 | 0.94 mA |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 1.27 mm |
| 端子位置 | ZIG-ZAG |
| 处于峰值回流温度下的最长时间 | 30 |
| IDT7MP1021S40Z | IDT7MP1023S65Z | 7MP1023S65Z | IDT7MP1021S50Z | IDT7MP1021S65Z | IDT7MP1023S40Z | IDT7MP1023S50Z | |
|---|---|---|---|---|---|---|---|
| 描述 | Application Specific SRAM, 128KX8, 40ns, CMOS, PZIP64 | Multi-Port SRAM Module, 64KX8, 65ns, CMOS, PZIP64 | Multi-Port SRAM Module, 64KX8, 65ns, CMOS, PZIP64 | Multi-Port SRAM Module, 128KX8, 50ns, CMOS, PZIP64 | Multi-Port SRAM Module, 128KX8, 65ns, CMOS, PZIP64 | Multi-Port SRAM Module, 64KX8, 40ns, CMOS, PZIP64 | Multi-Port SRAM Module, 64KX8, 50ns, CMOS, PZIP64 |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant |
| 最长访问时间 | 40 ns | 65 ns | 65 ns | 50 ns | 65 ns | 40 ns | 50 ns |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-PZIP-T64 | R-PZIP-T64 | R-PZIP-T64 | R-PZIP-T64 | R-PZIP-T64 | R-PZIP-T64 | R-PZIP-T64 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 内存密度 | 1048576 bit | 524288 bit | 524288 bit | 1048576 bit | 1048576 bit | 524288 bit | 524288 bit |
| 内存集成电路类型 | APPLICATION SPECIFIC SRAM | MULTI-PORT SRAM MODULE | MULTI-PORT SRAM MODULE | MULTI-PORT SRAM MODULE | MULTI-PORT SRAM MODULE | MULTI-PORT SRAM MODULE | MULTI-PORT SRAM MODULE |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
| 端口数量 | 2 | 2 | 2 | 2 | 2 | 2 | 2 |
| 端子数量 | 64 | 64 | 64 | 64 | 64 | 64 | 64 |
| 字数 | 131072 words | 65536 words | 65536 words | 131072 words | 131072 words | 65536 words | 65536 words |
| 字数代码 | 128000 | 64000 | 64000 | 128000 | 128000 | 64000 | 64000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| 组织 | 128KX8 | 64KX8 | 64KX8 | 128KX8 | 128KX8 | 64KX8 | 64KX8 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | ZIP | ZIP | ZIP | ZIP | ZIP | ZIP | ZIP |
| 封装等效代码 | ZIP64/68,.1,.1 | ZIP64/68,.1,.1 | ZIP64/68,.1,.1 | ZIP64/68,.1,.1 | ZIP64/68,.1,.1 | ZIP64/68,.1,.1 | ZIP64/68,.1,.1 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度(摄氏度) | 225 | 225 | 225 | 225 | 225 | 225 | 225 |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大待机电流 | 0.125 A | 0.065 A | 0.065 A | 0.125 A | 0.125 A | 0.065 A | 0.065 A |
| 最小待机电流 | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 最大压摆率 | 0.94 mA | 0.66 mA | 0.66 mA | 0.94 mA | 0.94 mA | 0.66 mA | 0.66 mA |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm |
| 端子位置 | ZIG-ZAG | ZIG-ZAG | ZIG-ZAG | ZIG-ZAG | ZIG-ZAG | ZIG-ZAG | ZIG-ZAG |
| 处于峰值回流温度下的最长时间 | 30 | 30 | 30 | 30 | 30 | 30 | 30 |
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