Shantou Huashan Electronic Devices Co.,Ltd.
NPN DARLINGTON TRANSISTOR
HP142TSW
█ APPLICATIONS
High DC Current Gain
█
ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature…………………………
－55~150℃
T
j
——Junction
Temperature……………………………… 150℃
P
C
——Collector
Dissipation（T
c
=25℃）…………………… 70W
V
CBO
——Collector-Base
Voltage…………………………… 100V
V
CEO
——Collector-Emitter
Voltage………………………… 100V
V
EBO
——Emitter-Base
Voltage……………………………… 5V
I
C
——Collector
Current（DC）……………………………… 8A
I
B
——Base
Current……………………………………………0.5A
TO-263
1―
Base，B
2―Collector，C
3―Emitter, E
█
ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter-Base Cutoff Current
Min
Typ
Max
Unit
Test Conditions
BV
CEO(SUS)
I
CEO
I
CBO
I
EBO
H
FE（1）
H
FE（2）
V
CE(sat1)
V
CE(sat2)
V
BE(
sat
)
V
BE(on)
t
D
t
R
t
S
t
F
１００
１０００
１０００
０．１５
０．５５
２．５
２．５
２
１
２
２
３
３．５
３
Ｖ
½Ａ
½Ａ
½Ａ
Ｖ
Ｖ
Ｖ
Ｖ
½Ｓ
½Ｓ
½Ｓ
½Ｓ
I
C
=30mA, I
B
=0
V
CE
=50V, I
B
=0
V
CB
=100V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=4V, I
C
=0.5A
V
CE
=4V, I
C
=3A
I
C
=5A, I
B
=10mA
I
C
=10A, I
B
=40mA
I
C
=10A, I
B
=40mA
V
CE
=4V,I
C
=10A,
Vcc=30V,Ic=5A
I
B1=
20mA
I
B2
=-20mA
DC Current Gain
Collector- Emitter Saturation Voltage
Base- Emitter Saturation Voltage
Base- Emitter On Voltage
Deiay time
Rise Time
Storage Time
Fall Time
Shantou Huashan Electronic Devices Co.,Ltd.
NPN DARLINGTON TRANSISTOR
HP142TSW
ARM技术
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