N PN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
█
LOW FREQUENCY AMPLIFIER APPLICATIONS.
█
ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………0.75W
V
CBO
——Collector-Base
Voltage………………………………40V
V
CEO
——Collector-Emitter
Voltage……………………………20V
V
E B O
——Emitter
-Base Voltage………………………………7V
I
C
——Collector
Current……………………………………300mA
I
C
——
Collector Current
………………………… …… … …5
A
HD965
TO-92
1―Emitter，E
2―Collector，C
3―Base，B
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ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Min
Typ
Max
Unit
Test Conditions
BV
CEO
BV
EBO
I
CBO
I
EBO
H
FE（2）
V
CE(sat)
f
T
Cob
２０
７
１８０
１５０
１５０
１００
１００
８００
１
５０
Ｖ
I
C
=1mA,
I =0
B
Ｖ
I
E
=10μA，I
C
=0
½Ａ
V
CB
=10V, I
E
=0
½Ａ
V
EB
=7V, I
C
=0
V
CE
=2V, I
C
=0.5A
V
CE
=2V, I
C
=2A
Ｖ
I
C
=3A, I
B
=0.1A
ＭＨ½
V
CE
=6V, I
C
=50mA
½Ｆ
V
CB
=20V, I
E
=0，f=1ＭＨ½
Emitter
Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Current Gain-Bandwidth Product
H
FE（1）
DC Current Gain
Output Capacitance
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