MAGNA
TEC
25.0
+0.1
-0.15
BUZ905
BUZ906
MECHANICAL DATA
Dimensions in mm
P–CHANNEL
POWER MOSFET
8.7 Max.
1.50
Typ.
11.60
± 0.3
10.90 ± 0.1
POWER MOSFETS FOR
AUDIO APPLICATIONS
30.2 ± 0.15
Ø 20 M ax.
39.0 ± 1.1
16.9 ± 0.15
1
2
Ø 1.0
FEATURES
• HIGH SPEED SWITCHING
• P–CHANNEL POWER MOSFET
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (160V & 200V)
R 4.0 ± 0.1
R 4.4 ± 0.2
• HIGH ENERGY RATING
• ENHANCEMENT MODE
• INTEGRAL PROTECTION DIODE
Case – Source
• N–CHANNEL ALSO AVAILABLE AS
BUZ900 & BUZ901
TO–3
Pin 1 – Gate
Pin 2 – Drain
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
DSX
Drain – Source Voltage
V
GSS
I
D
I
D(PK)
P
D
T
stg
T
j
R
θJC
Gate – Source Voltage
Continuous Drain Current
Body Drain Diode
Total Power Dissipation
Storage Temperature Range
Maximum Operating Junction Temperature
Thermal Resistance Junction – Case
@ T
case
= 25°C
BUZ905
-160V
±14V
-8A
-8A
125W
–55 to 150°C
150°C
1.0°C/W
BUZ906
-200V
Magnatec.
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 10/94
MAGNA
TEC
Characteristic
BV
DSX
BV
GSS
V
GS(OFF)
V
DS(SAT)
*
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Gate – Source Cut–Off Voltage
Drain – Source Saturation Voltage
BUZ905
BUZ906
STATIC CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Test Conditions
V
GS
= 10V
I
D
= -10mA
V
DS
= 0
V
DS
= -10V
V
GD
= 0
BUZ905
BUZ906
I
G
= ±100µA
I
D
= -100mA
I
D
= -8A
V
DS
= -160V
I
DSX
Drain – Source Cut–Off Current
V
GS
= -10V
BUZ905
V
DS
= -200V
BUZ906
yfs*
Forward Transfer Admittance
V
DS
= -10V
I
D
= -3A
0.7
Min.
-160
-200
±14
-0.15
Typ.
Max.
Unit
V
V
-1.5
-12
-10
V
V
mA
-10
2
S
DYNAMIC CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Characteristic
C
iss
C
oss
C
rss
t
on
t
off
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–on Time
Turn-off Time
Test Conditions
V
DS
= -10V
f = 1MHz
V
DS
= -20V
I
D
= -5A
Min.
Typ.
734
300
26
120
60
Max.
Unit
pF
ns
* Pulse Test: Pulse Width = 300µs , Duty Cycle
≤
2%.
150
Derating Chart
125
CH AN NE L D ISS IP ATION (W )
100
75
50
25
0
0
25
50
75
100
125
150
T
C
— CASE TEMPERATURE (˚C)
Magnatec.
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 10/94
MAGNA
TEC
-9
-8
-7
I
D
— D R AIN C U RR EN T (A)
-6V
BUZ905
BUZ906
Typical Output Characteristics
-7V
-9
-8
-7
I
D
— D R AIN C U RR EN T (A)
Typical Output Characteristics
T
C
= 75˚C
-7V
T
C
= 25˚C
-6
-5V
-6
-5
-4
-3
-2
-6V
-5
=
P
CH
-5V
=
P
CH
-4
-3
-4V
12
5W
-3V
12
-4V
5W
-2
-2V
-3V
-1
-1
-2V
0
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
V
DS
— DRAIN – SOURCE VOLTAGE (V)
0
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
V
DS
— DRAIN – SOURCE VOLTAGE (V)
-10
Forward Bias Safe Operating Area
DC
T
C
= 25˚C
100
V
DS
= -20V
G
FS
— TR AN SC ON DU C TAN CE (S)
Transconductance
OP
ER
AT
I
D
— D R AIN C U RR EN T (A)
IO
N
-1
10
T
C
= 25˚C
T
C
= 75˚C
-0.1
BUZ905
BUZ906
1
160V
-0.01
-1
-10
-100
200V
0.1
-1000
0
-1
-2
-3
-4
-5
-6
-7
-8
V
DS
— DRAIN – SOURCE VOLTAGE (V)
I
D
— DRAIN CURRENT (A)
Drain – Source Voltage
vs
-10
Gate – Source Voltage
T
C
= 25˚C
-9
-8
-7
I
D
— D RA IN C UR R EN T (A)
Typical Transfer Characteristics
V
DS
= -10V
V
DS
— DR AIN – S OU RC E V OLTA GE (V )
-8
I
D
= -6A
T
C
= 25˚C
-6
-5
-4
-3
-2
T
C
= 75˚C
T
C
= 100˚C
-6
-4
I
D
= -3A
-2
I
D
= -1A
-1
0
0
-2
-4
-6
-8
-10
-12
-14
V
GS
— GATE – SOURCE VOLTAGE (V)
0
0
-1
-2
-3
-4
-5
-6
-7
-8
V
GS
— GATE – SOURCE VOLTAGE (V)
Magnatec.
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 10/94
MAGNA
TEC
BUZ905
BUZ906
Magnatec.
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 10/94
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
