IGBT Module
Preliminary Data Sheet
S15
R15
A15
A7
A9
D1
A1
U1
V1
G15
V12
V13
K1
G1
V3
V6
N15
V9
V10
Q1
N1
PSII 75/12*
I
C80
=
V
CES
=
V
CE(sat)typ.
=
ECO-TOP
TM
1
60 A
1200 V
2.7 V
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA)
P
tot
Symbol
Conditions
Maximum Ratings
1200
T
VJ
= 25°C to 150°C
V
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
R
thJC
R
thJH
t
e
e
h r
s e
ta nd
a u
d l
e til
t
v s
n
ti t
e
a c
t
n u opm
te od el
r ev
p d
*NTC optional
± 20
V
T
C
= 25°C
T
C
= 80°C
90
60
A
A
V
GE
= ±15 V; R
G
= 22
Ω;
T
VJ
= 125°C
RBSOA, Clamped inductive load; L = 100 µH
100
V
CES
A
V
CE
= V
CES
; V
GE
= ±15 V; R
G
= 22
Ω;
T
VJ
= 125°C
non-repetitive
T
C
= 25°C
10
µs
W
379
typical picture, for pin
configuration see outline
drawing
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Conditions
(T
VJ
Characteristic Values
= 25°C, unless otherwise specified)
min.
typ. max.
2.7
3.0
3.2
I
C
= 75 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 2 mA; V
GE
= V
CE
V
CE
= V
CES
;
V
V
4.5
6.5
V
Package with DCB ceramic
base plate
Isolation voltage 3000 V
∼
Planar glass passivated chips
Low forward voltage drop
Leads suitable for PC board
soldering
UL Release applied
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
3.7
12.5
200
mA
mA
Applications
V
CE
= 0 V; V
GE
= ± 20 V
nA
Inductive load, T
VJ
= 125°C
V
CE
= 600 V; I
C
= 60 A
V
GE
= 15/0 V; R
G
= 22
Ω
100
70
500
70
9.1
6.7
3.3
ns
ns
ns
ns
mJ
mJ
AC and DC motor control
AC servo and robot drives
Power supplies
Welding inverters
Advantages
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
nF
0.33 K/W
K/W
0.66
Easy to mount with four screws
Space and weight savings
Improved temperature and
power cycling capability
High power density
Small and light weight
Caution:
These Devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Reverse diodes (FRED)
Symbol
I
F25
I
F80
Symbol
V
F
I
RM
t
rr
R
thJC
R
thJH
Conditions
T
C
= 25°C
T
C
= 80°C
Conditions
I
F
= 60 A;
T
VJ
= 25°C
T
VJ
= 125°C
Maximum Ratings
100
60
A
A
Characteristic Values
min.
typ. max.
2.28
1.67
41
200
1.32
2.6
V
V
A
ns
0.66 K/W
K/W
I
F
= 60 A; di
F
/dt = 500 A/µs; T
VJ
= 125°C
V
R
= 600 V; V
GE
= 0 V
with heatsink compound (0.42 K/m.K; 50 µm)
Temperature Sensor NTC
Symbol
R
25
B
25/50
Conditions
T = 25°C
Module
Symbol
T
VJ
T
stg
V
ISOL
M
d
a
Symbol
d
S
d
A
Weight
Package style and outline
t
e
e
h r
s e
ta nd
a u
d l
e til
t
v s
n
ti t
e
a c
t
n u opm
te od el
r ev
p d
Characteristic Values
min. typ. max.
4.75
5.0
3375
5.25 kΩ
K
Conditions
Maximum Ratings
-40...+125
-40...+150
3000
°C
°C
I
ISOL
≤
1 mA; 50/60 Hz
Mounting torque (M5)
V~
Max. allowable acceleration
3
26
50
Nm
lb.in.
m/s
2
Conditions
Characteristic Values
min. typ. max.
Creepage distance on surface
(Pin to heatsink)
Strike distance in air
(Pin to heatsink)
11.2
11.2
mm
mm
g
86
Dimensions in mm (1mm = 0.0394“)
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
120
A
T
J
= 25°C
V
GE
=17 V
15 V
13 V
11 V
100
I
C
120
A
T
J
= 125°C
100
I
C
80
60
40
V
GE
=17 V
15 V
13 V
11 V
80
60
40
9V
9V
20
0
0,0
81T120
20
0,5
1,0
Fig. 1 Typ. output characteristics
120
A
V
CE
= 20 V
T
J
= 25°C
100
I
C
80
60
40
20
0
5
6
Fig. 3 Typ. transfer characteristics
20
V
V
GE
15
t
e
e
h r
s e
ta nd
a u
d l
e til
t
v s
n
ti t
e
a c
t
n u opm
te od el
r ev
p d
1,5
2,0
2,5
3,0
V
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
V
V
CE
V
CE
0
81T120
Fig. 2 Typ. output characteristics
180
A
150
120
90
60
30
T
J
= 125°C
I
F
T
J
= 25°C
81T120
0
DWLP55-12
7
8
9
10
11
V
0,5
1,0
1,5
2,0
2,5
3,0
V
3,5
V
GE
V
F
Fig. 4 Typ. forward characteristics of
free wheeling diode
120
A
300
ns
I
RM
V
CE
= 600 V
I
C
= 50 A
t
rr
80
200
t
rr
10
40
5
I
RM
T
J
= 125°C
V
R
= 600 V
I
F
= 50 A
100
0
81T120
0
50
100
150
200
Q
G
250
nC
0
81T120
0
200
400
600
800
A/µs
-di/dt
1000
0
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
24
mJ
E
on
120
ns
t
d(on)
90
t
E
off
12
mJ
600
E
off
ns
500
t
d(off)
400 t
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 22
Ω
T
J
= 125°C
10
8
6
4
18
12
t
r
60
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 22
Ω
T
J
= 125°C
81T120
300
200
t
f
81T120
6
E
on
30
2
0
100
0
0
0
Fig. 7 Typ. turn on energy and switching
20
mJ
E
on
15
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 50 A
T
J
= 125°C
10
5
0
0 10 20 30 40 50 60 70 80 90 100
Ω
R
G
Fig. 9 Typ. turn on energy and switching
120
A
t
e
e
h r
s e
ta nd
a u
d l
e til
t
v s
n
ti t
e
a c
t
n u opm
te od el
r ev
p d
20
40
60
80
100
A
0
0
20
40
60
80
I
C
I
C
240
ns
100 A
Fig. 8 Typ. turn off energy and switching
times versus collector current times
versus collector current
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 50 A
T
J
= 125°C
10
t
d(on)
E
on
mJ
t
d(off)
E
off
1500
ns
1200
t
900
600
300
180
t
E
off
8
6
4
2
0
t
r
120
60
81T120
0
81T120
t
f
0 10 20 30 40 50 60 70 80 90 100
Ω
R
G
0
Fig. 10 Typ. turn off energy and switching
times versus gate resistor
times
versus gate resistor
1
100
I
CM
K/W
0,1
80
60
40
20
0
81T120
Z
thJC
R
G
= 22
Ω
T
J
= 125°C
V
CEK
< V
CES
0,01
0,001
0,0001
diode
IGBT
single pulse
VID...75-12P1
0
200
400
600
800 1000 1200
V
V
CE
0,00001
0,00001 0,0001
0,001
0,01
t
0,1
s
1
Fig. 11 Reverse biased safe operating area
Fig. 12
Typ. transient thermal impedance
RBSOA
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
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