ECO-PAC
TM
2
IGBT Module
Preliminary Data Sheet
PSII 15/12*
I
C25
= 18 A
V
CES
= 1200 V
V
CE(sat)typ.
= 2.3 V
S9
L9
N5
A5
A1
F3
G1
N9
R5
D5
C1
K13
X18
W14
H5
K10
K12
PSII 15/12*
*NTC optional
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA)
P
tot
Conditions
T
VJ
= 25°C to 150°C
T
C
= 25°C
T
C
= 80°C
V
GE
= ±15 V; R
G
= 82
Ω;
T
VJ
= 125°C
RBSOA, Clamped inductive load; L = 100 µH
V
CE
= 720 V; V
GE
= ±15 V; R
G
= 82
Ω;
T
VJ
= 125°C
non-repetitive
T
C
= 25°C
Maximum Ratings
1200
± 20
18
14
20
V
CES
10
90
µs
W
V
V
A
A
A
Features
•
Symbol
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
R
thJH
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
•
•
I
C
= 10 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 0.4 mA; V
GE
= V
CE
V
CE
= V
CES
;
V
CE
= 0 V; V
GE
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
= ± 20 V
4.5
2.3
2.7
2.7
6.5
0.5
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
pF
nC
•
•
•
NPT IGBT’s
- positive temperature coefficient
of saturation voltage
- fast switching
FRED diodes
- fast reverse recovery
- low forward voltage
Industry Standard Package
- solderable pins for PCB
mounting
- isolated DCB ceramic base plat
e
UL registered, E 148688
0.8
200
50
40
290
60
1.2
1.1
600
45
2.7
Applications
AC drives
power supplies with power factor
correction
Inductive load, T
VJ
= 125°C
V
CE
= 600 V; I
C
= 10 A
V
GE
= ±15 V; R
G
= 82
Ω
Advantages
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600 V; V
GE
= 15 V; I
C
= 10 A
(per IGBT)
(per IGBT) with heatsink compound
•
•
•
•
•
1.4 K/W
K/W
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
High power density
Small and light weight
Caution:
These devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSII 15/12
Diodes
Symbol
I
F25
I
F80
Symbol
V
F
I
RM
t
rr
R
thJC
R
thJH
Conditions
T
C
= 25°C
T
C
= 80°C
Maximum Ratings
15
10
A
A
Package style and outline
Dimensions in mm (1mm = 0.0394“)
Conditions
I
F
= 10 A; T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 10 A; di
F
/dt = -400 A/µs; T
VJ
= 125°C
V
R
= 600 V; V
GE
= 0 V
(per diode)
(per diode) with heatsink compound
Characteristic Values
min. typ. max.
2.6
1.9
13
110
5.0
3.0
V
V
A
ns
3.5 K/W
K/W
Component
Symbol
T
VJ
T
stg
V
ISOL
M
d
a
Symbol
d
S
d
A
Weight
I
ISOL
≤
1 mA; 50/60 Hz; t = 1 s
Mounting torque (M4)
Max. allowable acceleration
Conditions
Maximum Ratings
-40...+150
-40...+125
3600
1.5 - 2.0
14 - 18
50
°C
°C
V~
Nm
lb.in.
m/s
2
Conditions
Creepage distance on surface
(Pin to heatsink)
Strike distance in air
(Pin to heatsink)
Characteristic Values
min. typ. max.
11.2
11.2
24
mm
mm
g
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
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