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MXSMBG2K5.0TR

产品描述2000W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, PLASTIC PACKAGE-2
产品类别分立半导体    二极管   
文件大小306KB,共4页
制造商Microsemi
官网地址https://www.microsemi.com
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MXSMBG2K5.0TR概述

2000W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, PLASTIC PACKAGE-2

MXSMBG2K5.0TR规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称Microsemi
零件包装代码DO-215AA
包装说明R-PDSO-G2
针数2
Reach Compliance Codeunknown
ECCN代码EAR99
其他特性HIGH RELIABILITY
最小击穿电压5.9 V
最大钳位电压7.6 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-215AA
JESD-30 代码R-PDSO-G2
JESD-609代码e0
湿度敏感等级1
最大非重复峰值反向功率耗散2000 W
元件数量1
端子数量2
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性UNIDIRECTIONAL
最大功率耗散1.38 W
认证状态Not Qualified
最大重复峰值反向电压5 V
表面贴装YES
技术AVALANCHE
端子面层TIN LEAD
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED

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TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Surface Mount 2 kW
Transient Voltage Suppressor
- High Reliability controlled devices
- Unidirectional construction
- Available in both J-bend and Gull-wing terminations
- Selections for 3 V to 5 V standoff voltages (V
WM
)
LEVELS
M, MA, MX, MXL
DEVICES
MSMBJ2K3.0 thru MSMBJ2K5.0, e3
MSMBG2K3.0 thru MSMBG2K5.0,e3
FEATURES
High reliability controlled devices with wafer fabrication and assembly lot traceability
100 % surge tested devices
Suppresses transients up to 2 kW @ 8/20 µs
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes
specify various screening and conformance inspection options based on MIL-PRF-19500.
Refer to
MicroNote 129
for more details on the screening options.
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
3σ lot norm screening performed on Standby Current I
D
APPLICATIONS / BENEFITS
Voltage and reverse (leakage) current lowest available
Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc.
Protection from switching transients & induced RF
Compliant to IEC61000-4-2 and IEC61000-4-4 for ESD and EFT protection respectively
Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance for Class 1
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25 ºC: 2000 W @ 8/20 µs or 300 W @ 10/1000 µs
with impulse repetition rate (duty factor) of 0.01 maximum (also see Figure 1 and 4)
Steady-state power dissipation: 5 Watts @ T
L
≤ 25 °C or 1.38 Watts at T
A
= 25 °C when
mounted on FR4 PC board with recommended footprint
T
clamping
(0 Volts to V
BR
min.): <100 ps
Operating and Storage temperatures: -65°C to +150°C
Forward Voltage @ 25 °C: 3.5 Volts maximum @ 30 Amp peak impulse of 8.3 ms half-sine
wave (unidirectional only)
Solder temperatures: 260 °C for 10 s (maximum)
RF01019 Rev A, November 2010
High Reliability Product Group
Page 1 of 4

 
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