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SG6100F

产品描述Rectifier Diode, 7 Element, 0.3A, 75V V(RRM), Silicon, CERAMIC, FP-14
产品类别分立半导体    二极管   
文件大小34KB,共3页
制造商Linfinity Microelectronics
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SG6100F概述

Rectifier Diode, 7 Element, 0.3A, 75V V(RRM), Silicon, CERAMIC, FP-14

SG6100F规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Linfinity Microelectronics
包装说明CERAMIC, FP-14
Reach Compliance Codeunknown
配置SEPARATE, 7 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1 V
JESD-30 代码R-CDFP-F14
JESD-609代码e0
元件数量7
端子数量14
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流0.3 A
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装形状RECTANGULAR
封装形式FLATPACK
认证状态Not Qualified
最大重复峰值反向电压75 V
最大反向电流0.025 µA
最大反向恢复时间0.005 µs
反向测试电压20 V
表面贴装YES
端子面层Tin/Lead (Sn/Pb)
端子形式FLAT
端子位置DUAL

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SG6100/SG6511
SG6101/SG6510
DIODE ARRAY CIRCUITS
DESCRIPTION
The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic,
high breakdown, fast switching speed diode arrays. The SG6100/SG6511
is configured with 7 straight through diodes, while the SG6101/SG6510 has
8 straight through diodes.
These two diode array configurations allow the designer maximum flexibility
for circuit design and board layout. Since each diode within the array has
individual anode and cathode connections the device may be used in a
variety of applications. Also, due to the array's monolithic construction the
diode electrical parameters are very closely matched.
Both devices are available in ceramic DIP and flatpack and can be processed
to Linfinity's S level, JANTXV, JANTX, or JAN equivalent flows.
FEATURES
75V minimum breakdown voltage
100mA current capability per diode
Switching speeds less than 5ns
Low leakage current < 25nA
HIGH RELIABILITY FEATURES
MIL-S-19500/474 QPL - 1N6100
- 1N6101
- 1N6510
- 1N6511
Equivalent JANS, JANTXV, JANTX, JAN
screening available
CIRCUIT DIAGRAMS
7 - STRAIGHT THROUGH DIODES
SG6100/SG6511
8 - STRAIGHT THROUGH DIODES
SG6101/SG6510
6/91 Rev 1.1 2/94
Copyright
©
1994
1
11861 Western Avenue
Garden Grove, CA 92841
(714) 898-8121
FAX: (714) 893-2570
L
INFINITY
Microelectronics Inc.

SG6100F相似产品对比

SG6100F 1N6510 1N6511 SG6101J SG6510F SG6511J 1N6100 1N6101
描述 Rectifier Diode, 7 Element, 0.3A, 75V V(RRM), Silicon, CERAMIC, FP-14 Rectifier Diode, 8 Element, 0.3A, 65V V(RRM), Silicon, CERAMIC, FP-16 Trans Voltage Suppressor Diode, 65V V(RWM), Unidirectional, 7 Element, Silicon, CERAMIC, DIP-14 Rectifier Diode, 8 Element, 0.3A, 75V V(RRM), Silicon, CERAMIC, DIP-16 Rectifier Diode, 8 Element, 0.3A, 75V V(RRM), Silicon, CERAMIC, FP-16 Rectifier Diode, 7 Element, 0.3A, 75V V(RRM), Silicon, CERAMIC, DIP-14 Rectifier Diode, 7 Element, 0.3A, 65V V(RRM), Silicon, CERAMIC, FP-14 Rectifier Diode, 8 Element, 0.3A, 65V V(RRM), Silicon, CERAMIC, DIP-16
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合
厂商名称 Linfinity Microelectronics Linfinity Microelectronics Linfinity Microelectronics Linfinity Microelectronics Linfinity Microelectronics Linfinity Microelectronics Linfinity Microelectronics Linfinity Microelectronics
包装说明 CERAMIC, FP-14 CERAMIC, FP-16 CERAMIC, DIP-14 CERAMIC, DIP-16 CERAMIC, FP-16 CERAMIC, DIP-14 CERAMIC, FP-14 CERAMIC, DIP-16
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
配置 SEPARATE, 7 ELEMENTS SEPARATE, 8 ELEMENTS SEPARATE, 7 ELEMENTS SEPARATE, 8 ELEMENTS SEPARATE, 8 ELEMENTS SEPARATE, 7 ELEMENTS SEPARATE, 7 ELEMENTS SEPARATE, 8 ELEMENTS
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE TRANS VOLTAGE SUPPRESSOR DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 1 V 1 V 1 V 1 V 1 V 1 V 1 V 1 V
JESD-30 代码 R-CDFP-F14 R-CDFP-F16 R-CDIP-T14 R-CDIP-T16 R-CDFP-F16 R-CDIP-T14 R-CDFP-F14 R-CDIP-T16
JESD-609代码 e0 e0 e0 e0 e0 e0 e0 e0
元件数量 7 8 7 8 8 7 7 8
端子数量 14 16 14 16 16 14 14 16
最高工作温度 150 °C 175 °C 175 °C 150 °C 150 °C 150 °C 175 °C 175 °C
封装主体材料 CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLATPACK FLATPACK IN-LINE IN-LINE FLATPACK IN-LINE FLATPACK IN-LINE
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 75 V 65 V 65 V 75 V 75 V 75 V 65 V 65 V
最大反向电流 0.025 µA 0.025 µA 0.025 µA 0.025 µA 0.025 µA 0.025 µA 0.025 µA 0.025 µA
最大反向恢复时间 0.005 µs 0.005 µs 0.005 µs 0.005 µs 0.005 µs 0.005 µs 0.005 µs 0.005 µs
反向测试电压 20 V 20 V 20 V 20 V 20 V 20 V 20 V 20 V
表面贴装 YES YES NO NO YES NO YES NO
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 FLAT FLAT THROUGH-HOLE THROUGH-HOLE FLAT THROUGH-HOLE FLAT THROUGH-HOLE
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
最大输出电流 0.3 A 0.3 A - 0.3 A 0.3 A 0.3 A 0.3 A 0.3 A
最大功率耗散 - 0.4 W 0.4 W - 0.3 W - 0.4 W 0.4 W

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