HY5PS1G4(8,16)31C(L)FP
HY5PS1G4(8,16)31CFR
1Gb DDR2 SDRAM
HY5PS1G431C(L)FP
HY5PS1G831C(L)FP
HY5PS1G1631C(L)FP
HY5PS1G431CFR
HY5PS1G831CFR
HY5PS1G1631CFR
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.7 / Nov. 2008
1
HY5PS1G4(8,16)31C(L)FP
HY5PS1G4(8,16)31CFR
Revision Details
Rev.
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Initial data sheet released
IDD Values added
Inserted Pin Description & Corrected typos
Adjusted IDD values & Corrected typos
Adjusted IDD values
Updated IDD values and Halogen-free added
Editorial change on T
OPER
History
Draft Date
Nov. 2006
Dec. 2006
Mar. 2007
May. 2007
Jun. 2007
Jul. 2008
Nov. 2008
Rev. 0.7 / Nov. 2008
2
HY5PS1G4(8,16)31C(L)FP
HY5PS1G4(8,16)31CFR
Contents
1. Description
1.1 Device Features and Ordering Information
1.1.1 Key Features
1.1.2 Ordering Information
1.1.3 Operating Frequency
1.2 Pin configuration
1.3 Pin Description
2. Maximum DC ratings
2.1 Absolute Maximum DC Ratings
2.2 Operating Temperature Condition
3. AC & DC Operating Conditions
3.1 DC Operating Conditions
3.1.1 Recommended DC Operating Conditions(SSTL_1.8)
3.1.2 ODT DC Electrical Characteristics
3.2 DC & AC Logic Input Levels
3.2.1 Input DC Logic Level
3.2.2 Input AC Logic Level
3.2.3 AC Input Test Conditions
3.2.4 Differential Input AC Logic Level
3.2.5 Differential AC Output Parameters
3.3 Output Buffer Levels
3.3.1 Output AC Test Conditions
3.3.2 Output DC Current Drive
3.3.3 OCD default characteristics
3.4 IDD Specifications & Measurement Conditions
3.5 Input/Output Capacitance
4. AC Timing Specifications
5. Package Dimensions
Rev. 0.7 / Nov. 2008
3
HY5PS1G4(8,16)31C(L)FP
HY5PS1G4(8,16)31CFR
1. Description
1.1 Device Features & Ordering Information
1.1.1 Key Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
VDD = 1.8 +/- 0.1V
VDDQ = 1.8 +/- 0.1V
All inputs and outputs are compatible with SSTL_18 interface
8 banks
Fully differential clock inputs (CK, /CK) operation
Double data rate interface
Source synchronous-data transaction aligned to bidirectional data strobe (DQS, DQS)
Differential Data Strobe (DQS, DQS)
Data outputs on DQS, DQS edges when read (edged DQ)
Data inputs on DQS centers when write (centered DQ)
On chip DLL align DQ, DQS and DQS transition with CK transition
DM mask write data-in at the both rising and falling edges of the data strobe
All addresses and control inputs except data, data strobes and data masks latched on the rising
edges of the clock
Programmable CAS latency 3, 4, 5 and 6 supported
Programmable additive latency 0, 1, 2, 3, 4 and 5 supported
Programmable burst length 4/8 with both nibble sequential and interleave mode
Internal eight bank operations with single pulsed RAS
Auto refresh and self refresh supported
tRAS lockout supported
8K refresh cycles /64ms
JEDEC standard 60ball FBGA(x4/x8), 84ball FBGA(x16)
Full strength driver option controlled by EMR
On Die Termination supported
Off Chip Driver Impedance Adjustment supported
Read Data Strobe supported (x8 only)
Self-Refresh High Temperature Entry
Rev. 0.7 / Nov. 2008
4
HY5PS1G4(8,16)31C(L)FP
HY5PS1G4(8,16)31CFR
1.1.2 Ordering Information
Part No.
HY5PS1G431C(L)FP-XX*
HY5PS1G431CFR-XX*
HY5PS1G831C(L)FP-XX*
HY5PS1G831CFR-XX*
HY5PS1G1631C(L)FP-XX*
HY5PS1G1631CFR-XX*
64Mx16
128Mx8
256Mx4
60 Ball
Configuration
Package
84 Ball
Note:
-XX* is the speed bin, refer to the Operating Frequency table for complete part number.
Hynix lead-free products are compliant to RoHS.
1.1.3 Operating Frequency
Grade
E3
C4
Y5
S6
S5
tCK(ns)
5
3.75
3
2.5
2.5
CL
3
4
5
6
5
tRCD
3
4
5
6
5
tRP
3
4
5
6
5
Unit
Clk
Clk
Clk
Clk
Clk
Rev. 0.7 / Nov. 2008
5
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
