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CMH02(TE12L,Q)

产品描述DIODE HI EFF 400V 3A M-FLAT
产品类别分立半导体    二极管   
文件大小197KB,共5页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
标准
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CMH02(TE12L,Q)概述

DIODE HI EFF 400V 3A M-FLAT

CMH02(TE12L,Q)规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Toshiba(东芝)
Reach Compliance Codeunknown

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CMH02
TOSHIBA High Efficiency Rectifier Silicon Epitaxial Type
CMH02
Switching Mode Power Supply Applications
Repetitive peak reverse voltage: V
RRM
= 400 V
Average forward current: I
F (AV)
= 3.0 A
Low forward voltage: V
FM
=1.3 V (Max.)
Very fast reverse recovery time: trr =50ns (Max.)
Suitable for compact assembly due to small surface-mount package
“M−FLAT
TM
” (Toshiba package name)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Repetitive peak reverse voltage
Average forward current
Peak one cycle surge forward current
(non-repetitive)
Junction temperature
Storage temperature range
Symbol
V
RRM
I
F (AV)
I
FSM
T
j
T
stg
Rating
400
3.0 (Note 1)
40 (50 Hz)
−40~150
−40~150
Unit
V
A
A
°C
°C
Note 1: Tℓ=87°C
Device mounted on a ceramic board
board size: 50 mm
×
50 mm
soldering land: 2 mm
×2
mm
board thickness:0.64t
JEDEC
JEITA
Note 2: Using continuously under heavy loads (e.g. the application of
TOSHIBA
3-4E1A
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.023 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
V
FM (1)
Peak forward voltage
V
FM (2)
V
FM (3)
Peak repetitive reverse current
Reverse recovery time
Forward recovery time
I
RRM
t
rr
t
fr
Test Condition
I
FM
=
0.1 A (pulse test)
I
FM
=
1.0 A (pulse test)
I
FM
=
3.0 A (pulse test)
V
RRM
=
400 V (pulse test)
I
F
=
1 A, di/dt =
−30
A/μs
I
F
=
1.0 A
Device mounted on a ceramic board
(board size: 50 mm
×
50 mm)
(soldering land: 2 mm
×
2 mm)
(board thickness: 0.64 t)
Thermal resistance
(junction to ambient)
R
th (j-a)
Device mounted on a glass-epoxy board
(board size: 50 mm
×
50 mm)
(soldering land: 6 mm
×
6 mm)
(board thickness: 1.6 t)
Device mounted on a glass-epoxy board
(board size: 50 mm
×
50 mm)
(soldering land: 2.1 mm
×
1.4 mm)
(board thickness: 1.6 t)
Thermal resistance
(junction to lead)
R
th (j-ℓ)
Min
Typ.
0.73
0.93
1.1
Max
1.3
10
50
100
60
μA
ns
ns
V
Unit
135
°C/W
210
16
°C/W
Start of commercial production
2002-12
1
2013-11-01
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